MIMMG400HB060B6EN

MIMMG400HB060B6EN
600V 400A IGBT Module
RoHS Compliant
FEATURES
□ High short circuit capability,self limiting short circuit current
□ VCE(sat) with positive temperature coefficient
□ Fast switching and short tail current
□ Free wheeling diodes with fast and soft reverse recovery
□ Low switching losses
APPLICATIONS
□ High frequency switching application
□ Medical applications
□ Motion/servo control
□ UPS systems
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
TC=25°C unless otherwise specified
Test Conditions
Values
Unit
600
V
±20
V
TC=25°C
500
A
TC=65°C
400
A
tp=1ms
800
A
1070
W
TVj=25°C
600
V
TC=25°C
500
A
TC=65°C
400
A
tp=1ms
800
A
TVj =125°C, t=10ms, VR=0V
9000
A2 s
IGBT
VCES
Collector - Emitter Voltage
VGES
Gate - Emitter Voltage
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
Ptot
Power Dissipation Per IGBT
TVj=25°C
Diode
VRRM
Repetitive Reverse Voltage
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
2
It
MIMMG400HB060B6EN
ELECTRICAL AND THERMAL CHARACTERISTICS
Symbol
Parameter
TC=25°C unless otherwise specified
Test Conditions
Min.
Typ.
Max.
Unit
4.9
5.8
6.5
V
IGBT
VGE(th)
VCE(sat)
Gate - Emitter Threshold Voltage
VCE=VGE, IC=6.4mA
Collector - Emitter
IC=400A, VGE=15V, TVj=25°C
1.45
V
Saturation Voltage
IC=400A, VGE=15V, TVj=125°C
1.6
V
VCE=600V, VGE=0V, TVj=25°C
1
mA
VCE=600V, VGE=0V, TVj=125°C
5
mA
400
nA
ICES
Collector Leakage Current
IGES
Gate Leakage Current
RGint
Integrated Gate Resistor
Qge
Gate Charge
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
td(on)
Turn - on Delay Time
tr
Rise Time
td(off)
Turn - off Delay Time
tf
Fall Time
Eon
Turn - on Energy
Eoff
Turn - off Energy
ISC
Short Circuit Current
RthJC
Junction-to-Case Thermal Resistance
VCE=0V,VGE±15V, TVj=125°C
VCE=300V, IC=400A , VGE=±15V
VCE=25V, VGE=0V, f =1MHz
-400
1
Ω
4.3
µC
26
nF
0.76
nF
VCC=300V,IC=400A,
TVj =25°C
120
ns
RG =1.5Ω,
TVj =125°C
140
ns
VGE=±15V,
TVj =25°C
60
ns
Inductive Load
TVj =125°C
75
ns
VCC=300V,IC=400A,
TVj =25°C
490
ns
RG =1.5Ω,
TVj =125°C
520
ns
VGE=±15V,
TVj =25°C
60
ns
Inductive Load
TVj =125°C
75
ns
VCC=300V,IC=400A,
TVj =25°C
2.1
mJ
RG =1.5Ω,
TVj =125°C
3.2
mJ
VGE=±15V,
TVj =25°C
14
mJ
Inductive Load
TVj =125°C
17
mJ
1900
A
tpsc≤6µS , VGE=15V
TVj=125°C,VCC=360V
（ Per IGBT）
0.13
K /W
Diode
IF=400A , VGE=0V, TVj =25°C
1.55
V
IF=400A , VGE=0V, TVj =125°C
1.50
V
Max. Reverse Recovery Current
IF=400A , VR=300V
260
A
Qrr
Reverse Recovery Charge
diF/dt=-4500A/μs
30.0
µC
Erec
Reverse Recovery Energy
TVj=125°C
8.0
mJ
RthJCD
Junction-to-Case Thermal Resistance （ Per Diode）
VF
Forward Voltage
IRRM
0.24
K /W
MIMMG400HB060B6EN
NTC SECTOR
CHARACTERISTIC VALUES
Symbol
R25
TC=25°C unless otherwise specified
Parameter
Test Conditions
Resistance
Min.
TC =25°C
B25/50
MODULE CHARACTERISTICS
Symbol
Parameter
Typ.
Max.
Unit
5
KΩ
3375
K
TC=25°C unless otherwise specified
Test Conditions
Min.
Typ.
Max.
Unit
175
°C
TVj max
Max. Junction Temperature
TVj op
Operating Temperature
-40
150
°C
Tstg
Storage Temperature
-40
125
°C
Visol
Insulation Test Voltage
CTI
Comparative Tracking Index
Torque
Module-to-Sink
Recommended（M6）
3
5
N· m
Torque
Module Electrodes
Recommended（M6）
2.5
5
N· m
AC, t=1min
3000
V
350
Weight
200
800
g
800
VGE =15V
640
480
TVj=25°C
IC (A)
IC (A)
640
320
480
TVj =125°C
320
TVj=125°C
160
0
0
160
1.2 1.6
2.0 2.4
VCE（V）
Figure1. Typical Output characteristics
IGBT-inverter
0.4
0.8
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VCE（V）
Figure2. Typical Output characteristics
IGBT-inverter
MIMMG400HB060B6EN
60
800
VCC=300V
IC=400A
VGE=±15V
TVj =125°C
VCE =20V
50
640
Eon Eoff (mJ)
IC (A)
TVj =25°C
480
320
TVj =125°C
160
5
40
30
20
0
Eoff
10
14
6
RG（Ω）
Figure4. Switching Energy vs. Gate Resistor
IGBT-inverter
7
9
10
11
8
VGE（V）
Figure3. Typical Transfer characteristics
IGBT-inverter
0
2
1000
800
24
600
Eoff
IC (A)
Eon Eoff (mJ)
6
VCC=300V
RG=1.5Ω
VGE=±15V
TVj =125°C
32
16
Eon
8
0
0
400
RG=1.5Ω
VGE=±15V
TVj =125°C
200
0
300 400 500 600 700
VCE（V）
Figure6. Reverse Biased Safe Operating Area
IGBT-inverter
200
400
600
800
IC（A）
Figure5. Switching Energy vs. Collector Current
IGBT-inverter
0
12
800
Erec (mJ)
TVj =125°C
480
320
100
200
IF=400A
VCE=300V
TVj =125°C
10
640
IF (A)
Eon
10
0
8
6
4
160
0
40
TVj =25°C
0
0.8
1.6
1.2
2.0
VF（V）
Figure7. Diode Forward Characteristics
Diode -inverter
0.4
2
0
0
10 12
8
14
RG（Ω）
Figure8. Switching Energy vs. Gate Resistor
Diode -inverter
2
4
6
MIMMG400HB060B6EN
1
20
RG=1.5Ω
VCE=300V
TVj =125°C
ZthJC (K/W)
Diode
12
8
0.1
IGBT
0.01
4
0
0
0.001
0.001
480
640
800
IF (A)
Figure9. Switching Energy vs. Forward Current
Diode -inverter
160
320
0.01
0.1
1
10
Rectangular Pulse Duration (seconds)
Figure10. Transient Thermal Impedance of
Diode and IGBT-inverter
100000
IFGE
=25=15V
A
V
VCE=600V
TVj =125°C
10000
R (Ω)
Erec (mJ)
16
R
1000
100
0
20
60 80 100 120 140 160
TC（°C）
Figure11. NTC Characteristics
40
MIMMG400HB060B6EN
Figure12. Circuit Diagram
Dimensions (mm)
Figure13. Package Outline