Design Assistance Customised Pack Sizes / Qtys Assembly Assistance Support for all industry recognised supply formats: Die handling consultancy Hi-Rel die qualification Hot & Cold die probing Electrical test & trimming o Waffle Pack o Gel Pak o Tape & Reel Onsite storage, stockholding & scheduling 100% Visual Inspection o MIL-STD 883 Condition A o MIL-STD 883 Condition A On-site failure analysis Bespoke 24 Hour monitored storage systems for secure long term product support On-site failure analysis Contact [email protected] For price, delivery and to place orders HMC1106 www.analog.com www.micross.com Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC1106 v01.0314 MIXERS - CHIP GaAs MMIC MIXER 15 - 36 GHz Typical Applications Features The HMC1106 is ideal for: Passive: No DC Bias Required • Microwave Point-to-Point Radios Low LO Power: +15 dBm • VSAT & SATCOM LO/RF Isolation: 38 dB • Test Equipment & Sensors LO/IF Isolation: 32 dB • Military End-Use RF/IF Isolation: 25 dB • Automotive Radar Wide IF Bandwidth: DC to 24 GHz Die Size: 1.79 x 1.46 x 0.1 mm General Description Functional Diagram The HMC1106 is a double-balanced mixer which can be used as a downconverter with DC to 24 GHz at the IF port, 20 to 50 GHz at the LO port, and 15 to 36 GHz at the RF port. This passive MMIC mixer is fabricated with GaAs Shottky diode technology. All bond pads and the die backside are Ti/Au metallized and the Shottky devices are fully passivated for reliable operation. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. Electrical Specifications, TA = +25° C, LO = 36.1 GHz, LO = +15 dBm, LSB [1] Parameter Min. RF Frequency Range Typ. Max. Min. 15 -24 Typ. Max Min. 24 - 27 Typ. Max 27 - 36 Units GHz LO Frequency Range 20 - 50 GHz IF Frequency Range DC - 24 GHz Conversion Loss 9 LO to RF Isolation 38 12 11 14 10 38 14 dB 38 dB LO to IF Isolation [2] 25 32 25 32 25 32 dB RF to IF Isolation [3] 15 22 15 18 15 25 dB 22 dBm IP3 (Input) 16 16 [1] Unless otherwise noted , all measurements performed as downconverter with LO Frequency = 36.1 GHz and LO Power = +15 dBm [2] Typical value = 22 dB at LO = 20 GHz [3] Data taken with LO = 30 GHz 1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1106 v01.0314 GaAs MMIC MIXER 15 - 36 GHz 0 0 -2 -2 -4 -6 -8 -10 -12 -14 -16 -4 -6 -8 -10 -12 -14 -16 -18 -18 14 16 18 20 22 24 26 28 30 32 34 36 14 16 18 20 RF FREQUENCY (GHz) +25 C +85 C -55 C 26 28 30 32 34 36 15 dBm 17 dBm Conversion Loss vs. LO Power IF = 12.1 GHz [2] 0 0 -2 -2 CONVERSION LOSS (dB) CONVERSION LOSS (dB) 24 13 dBm Conversion Loss vs. Temperature IF = 12.1 GHz [2] -4 -6 -8 -10 -12 -14 -16 -4 -6 -8 -10 -12 -14 -16 -18 -18 15 17 19 21 23 25 27 29 31 33 35 37 15 17 19 21 RF FREQUENCY (GHz) +25 C 23 25 27 29 31 33 35 37 RF FREQUENCY (GHz) +85 C -55 C 13 dBm Conversion Loss vs. Temperature IF = 16.1 GHz [2] 15 dBm 17 dBm Conversion Loss vs. LO Power IF = 16.1 GHz [2] 0 0 -2 -2 CONVERSION LOSS (dB) CONVERSION LOSS (dB) 22 RF FREQUENCY (GHz) MIXERS - CHIP Conversion Loss vs. LO Power LO = 36.1 GHz [1] CONVERSION LOSS (dB) CONVERSION LOSS (dB) Conversion Loss vs. Temperature LO = 36.1 GHz [1] -4 -6 -8 -10 -12 -14 -16 -4 -6 -8 -10 -12 -14 -16 -18 -18 15 17 19 21 23 25 27 29 31 33 15 17 19 RF FREQUENCY (GHz) +25 C +85 C 21 23 25 27 29 31 33 RF FREQUENCY (GHz) -55 C 13 dBm 15 dBm 17 dBm [1] Measurement taken at fixed LO frequency, LSB [2] Measurement taken at fixed IF frequency, LSB For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC1106 v01.0314 GaAs MMIC MIXER 15 - 36 GHz Conversion Loss vs. IF [1] Input IP3 vs. IF [1] 0 35 30 -4 25 -6 IP3 (dBm) CONVERSION LOSS (dB) MIXERS - CHIP -2 -8 -10 -12 20 15 10 -14 5 -16 -18 0 14 16 18 20 22 24 26 28 30 32 34 36 38 40 14 16 18 20 22 RF FREQUENCY (GHz) 0.1 GHz 4.1 GHz 8.1 GHz 12.1 GHz 16.1 GHz 20.1 GHz 24.1 GHz 28 30 32 34 36 38 40 16.1 GHz 20.1 GHz 24.1 GHz Input IP3 vs. LO Power LO = 36.1 GHz [2] 35 35 30 30 25 25 IP3 (dBm) IP3 (dBm) 26 0.1 GHz 4.1 GHz 8.1 GHz 12.1 GHz Input IP3 vs. Temperature LO = 36.1 GHz [2] 20 15 20 15 10 10 5 5 0 0 14 16 18 20 22 24 26 28 30 32 34 36 14 16 18 20 RF FREQUENCY (GHz) +25 C 22 24 26 28 30 32 34 36 RF FREQUENCY (GHz) +85 C -55 C 13 dBm Input IP3 vs. Temperature IF = 12.1 GHz [1] 15 dBm 17 dBm Input IP3 vs. LO Power IF = 12.1 GHz [1] 35 35 30 30 25 25 IP3 (dBm) IP3 (dBm) 24 RF FREQUENCY (GHz) 20 15 20 15 10 10 5 5 0 0 14 16 18 20 22 24 26 28 30 32 34 RF FREQUENCY (GHz) +25 C +85 C 36 14 16 18 20 22 24 26 28 30 32 34 36 RF FREQUENCY (GHz) -55 C 13 dBm 15 dBm 17 dBm [1] Measurement taken at fixed IF frequency, LSB [2] Measurement taken at fixed LO frequency, LSB 3 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1106 v01.0314 GaAs MMIC MIXER 15 - 36 GHz 35 35 30 30 25 25 20 15 20 15 10 10 5 5 0 0 14 16 18 20 22 24 26 28 30 32 34 14 16 18 20 RF FREQUENCY (GHz) +25 C +85 C -55 C 26 28 30 32 34 15 dBm 17 dBm RF Return Loss vs. LO Power LO = 30GHz 0 0 -5 -5 RETURN LOSS (dB) RETURN LOSS (dB) 24 13 dBm RF Return Loss vs. Temperature LO = 30GHz -10 -15 -20 -25 -30 -10 -15 -20 -25 -30 -35 -35 14 16 18 20 22 24 26 28 30 32 34 36 38 40 14 16 18 20 22 RF FREQUENCY (GHz) 25 C 24 26 28 30 32 34 36 38 40 RF FREQUENCY (GHz) 85 C -85 C 13 dBm LO Return Loss vs. Temperature [2] 0 -5 -5 -10 -15 -20 15 dBm 17 dBm LO Return Loss vs. LO Power 0 RETURN LOSS (dB) RETURN LOSS (dB) 22 RF FREQUENCY (GHz) MIXERS - CHIP Input IP3 vs. LO Power IF = 16.1 GHz [1] IP3 (dBm) IP3 (dBm) Input IP3 vs. Temperature IF = 16.1 GHz [1] -10 -15 -20 -25 -25 20 25 30 35 40 45 50 LO FREQUENCY (GHz) 25 C 85 C 20 25 30 35 40 45 50 LO FREQUENCY (GHz) -55 C 13 dBm 14 dBm [1] Measurement taken at fixed IF frequency, LSB [2] Measurement taken at LO power = +14 dBm For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC1106 v01.0314 GaAs MMIC MIXER 15 - 36 GHz LO/RF Isolation vs. LO Power 0 0 -10 -10 -20 -20 ISOLATION (dB) ISOLATION (dB) MIXERS - CHIP LO/RF Isolation vs. Temperature -30 -40 -50 -30 -40 -50 -60 -60 -70 -70 -80 -80 10 15 20 25 30 35 40 45 50 10 15 20 LO FREQUENCY (GHz) +25 C +85 C 0 -10 -10 ISOLATION (dB) ISOLATION (dB) 35 40 45 50 15 dBm 17 dBm LO/IF Isolation vs. LO Power 0 -20 -30 -40 -20 -30 -40 -50 -50 10 15 20 25 30 35 40 45 50 10 15 20 LO FREQUENCY (GHz) +25 C 25 30 35 40 45 50 LO FREQUENCY (GHz) +85 C 13 dBm -55 C RF/IF Isolation vs. Temperature LO = 20 GHz 15 dBm 17 dBm RF/IF Isolation vs. LO Power LO = 20 GHz 0 0 -10 -10 ISOLATION (dB) ISOLATION (dB) 30 13 dBm -55 C LO/IF Isolation vs. Temperature -20 -30 -40 -20 -30 -40 -50 -50 10 15 20 25 30 35 40 10 15 20 RF FREQUENCY (GHz) +25 C 5 25 LO FREQUENCY (GHz) +85 C 25 30 35 40 RF FREQUENCY (GHz) -55 C 13 dBm 15 dBm 17 dBm For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1106 v01.0314 GaAs MMIC MIXER 15 - 36 GHz 0 0 -10 -10 -20 -30 -40 MIXERS - CHIP RF/IF Isolation vs. LO Power LO = 30 GHz ISOLATION (dB) ISOLATION (dB) RF/IF Isolation vs. Temperature LO = 30 GHz -20 -30 -40 -50 -50 10 15 20 25 30 35 40 10 15 20 RF FREQUENCY (GHz) +25 C 25 30 35 40 RF FREQUENCY (GHz) +85 C 13 dBm -55 C MxN Spurious Outputs, RF = 20GHz 15 dBm 17 dBm MxN Spurious Outputs, RF = 25 GHz nLO nLO mRF 0 1 2 3 4 mRF 0 1 2 3 4 0 xx 1 0 0 0 0 xx 0 0 0 0 1 9.8 0 0 0 0 1 12.5 0 22.5 0 0 2 58.5 30.3 41.7 0 0 2 56.5 25 33.3 0 0 3 0 35 46.6 56 0 3 0 53.7 55.8 57 0 4 0 78.5 62.6 57.4 0 4 0 0 73.6 64.4 68.8 RF = 20 GHz @ -4 dBm RF = 25 GHz @ -4 dBm LO = 35 GHz @ +13 dBm LO = 35 GHz @ +13 dBm Data taken without IF hybrid Data taken without IF hybrid All values in dBc below IF power level All values in dBc below IF power level MxN Spurious Outputs, RF = 30 GHz nLO mRF 0 1 2 3 4 0 xx 5 0 0 0 1 16.5 0.2 22.7 0 0 2 0 42.6 57.3 45.5 0 3 0 0 50.5 60.1 0 4 0 0 63.2 68.5 67.3 RF = 30 GHz @ -4 dBm LO = 35 GHz @ +13 dBm Data taken without IF hybrid All values in dBc below IF power level For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 6 HMC1106 v01.0314 GaAs MMIC MIXER 15 - 36 GHz MIXERS - CHIP Absolute Maximum Ratings LO Input Power +17 dBm Maximum Junction Temperature 175 °C Continuous Pdiss (T= 85 °C) (derate 1.75 mW/°C above 85°C) 157 mW Thermal Resistance (RTH) (junction to die bottom) 570 °C/W Operating Temperature -55 to +85 °C Storage Temperature -65 to 150 °C ESD Sensitivity (HBM) Class1A, passed 250V ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard Alternate GP-2 (Gel Pack) [2] [1] For more information refer to the “Packaging information” Document in the Product Support Section of our website. [2] For alternate packaging information contact Hittite Microwave Corporation. 7 NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. DIE THICKNESS IS 0.004” 3. BOND PADS 1, 2 & 3 are 0.0059” [0.150] X 0.0039” [0.099]. 4. BACKSIDE METALLIZATION: GOLD. 5. BOND PAD METALLIZATION: GOLD. 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 8. Overall die size ± 0.002 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1106 v01.0314 GaAs MMIC MIXER 15 - 36 GHz Pad Descriptions Function Description 1 LO This pad is AC coupled and Matched to 50 Ohms. 2 RF This pad is AC coupled and Matched to 50 Ohms. 3 IF This pad is DC coupled and Matched to 50 Ohms. Die Bottom GND Die bottom must be connected to RF/DC ground Pad Schematic MIXERS - CHIP Pad Number Assembly Diagram For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8 HMC1106 v01.0314 GaAs MMIC MIXER 15 - 36 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs MIXERS - CHIP The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (molytab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Handling Precautions 0.127mm (0.005”) Thick Alumina Thin Film Substrate Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Figure 1. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). 9 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1106 v01.0314 GaAs MMIC MIXER 15 - 36 GHz MIXERS - CHIP Notes: For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 10