HMC6001

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HMC6001
v02.0514
mmWAVE RECEIVER - CHIP
Millimeterwave Receiver IC
57 - 64 GHz
1
Typical Applications
Features
The HMC6001 is ideal for:
Support for IEEE Channel Plan
• WiGig Single Carrier Modulations
Receiver Gain: 2 - 67 dB
• 60 GHz ISM Band Data Transmitter
Noise Figure: 6.0 dB
• Multi-Gbps Data Communications
Integrated Image Reject Filter
• High Definition Video Transmission
Integrated Frequency Synthesizer
• RFID
Programmable IF Gain Blocks
Universal Analog I/Q Baseband Interface
Integrated AM and FM Demodulator
Three-Wire Serial Digital Interface
Die Size: 3.452 x 1.852 mm
Functional Diagram
General Description
The HMC6001 is a complete mmWave superheterodyne receiver chip including LNA, image
reject filter, RF to IF downconverter, IF filter, I/Q
downconverter, and frequency synthesizer.
The
receiver operates from 57 to 64 GHz with up to 1.8 GHz
of double sided modulation bandwidth. An integrated
synthesizer provides tuning in 500 or 540 MHz step
sizes depending on the choice of external reference
clock. Support for a wide variety of modulation formats
is provided through a universal analog baseband IQ
interface. The receiver chip supports all single carrier
WiGig modulations and optionally supports dedicated
FSK/MSK modulation formats for lower cost and lower
power serial data links without the need for high speed
data converters. LNA and adjustable gain IF stages
provide 6 dB typical noise figure with AGC support.
Together with the HMC6000, a complete transmit/
receive chipset is provided for multi-Gbps operation in
the unlicensed 60 GHz ISM band.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC6001
v02.0514
Millimeterwave Receiver IC
57 - 64 GHz
Parameter
Condition
Frequency Range
Min.
Typ.
57
Max.
Units
64
GHz
Frequency Step Size
308.5714 MHz Ref Clk
0.54
GHz
Frequency Step Size
285.714 MHz Ref Clk
0.50
GHz
Max BW setting, 5dB BW, double-sided
1.8
Modulation Bandwidth
Max Gain
Pout of all 4 baseband outputs minus Pin
63
67
GHz
69
dB
Gain Control Range
65
dB
Gain Step Size
1
dB
Gain Change Settling Time
3
μs
Noise Figure (<57.5 GHz)
at Max Gain
6
7
8
dB
Noise Figure (>57.5 GHz)
at Max Gain
5
6
7
dB
Input IP3
at Min Gain
-27
dBm
Input P1dB
at Min Gain
-36
dBm
Image Rejection
>35
dB
27
dBc
Phase Noise @ 100 kHz
-72
dBc/Hz
Phase Noise @ 1 MHz
-86
dBc/Hz
Phase Noise @ 10 MHz
-111
dBc/Hz
Phase Noise @ 100 MHz
-125
dBc/Hz
Phase Noise @ 1 GHz
-127
dBc/Hz
200
kHz
<6
μs
0.610
W
Sideband Suppression
PLL Loop BW
14
Internal Loop Filter
Synthesizer Settling Time
Power Dissipation
mmWAVE RECEIVER - CHIP
Table 1. Electrical Specifications, TA = +25° C, See Test Conditions
Table 2. Test Conditions
Reference frequency
308.5714 MHz
Temperature
+25°C
Gain Setting
Max
Input Signal Level
-65 dBm
IF Bandwidth
Max
Input Impedance
50Ω Single-Ended
Output Impedance
100Ω Differential
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
2
HMC6001
v02.0514
Millimeterwave Receiver IC
57 - 64 GHz
Table 3. Recommended Operation Conditions
mmWAVE RECEIVER - CHIP
Description
Symbol
Analog Ground
Min
GND
Typical
Max
0
Units
Vdc
VCC_BUF
VCC_REG
VCC_IF
VCC_TRIP
VCC_DIV
VCC_MIX
VCC_LNA
2.565
2.7
2.835
Vdc
VDDD
VDD_PLL
1.3
1.35
1.48
Vdc
Serial Digital Interface – Logic High
DATA
ENABLE
CLK
RESET
0.9
1.2
1.4
V
Serial Digital Interface – Logic Low
DATA
ENABLE
CLK
RESET
-0.05
0.1
0.3
V
Power Supplies
Input Voltage Ranges
3.3 or 2.5V
LVPECL/LVDS
1.2V CMOS
REFCLKP
REFCLKM
Reference Clock
BB_IM
BB_IP
BB_QM
BB_QP
Baseband I and Q [1]
10
50
V
200
mVp-p
+85
C
1.3
Baseband I and Q Common Mode [4]
Temperature
V
-40
[1] Baseband voltage at each of the 4 baseband outputs
[2] DC voltage present at all 4 baseband outputs
Table 4. Power Consumption
Voltage
3
Typical Current (mA)
VCC_BUF
(2.7Vdc)
VCC_REG
(2.7Vdc)
13
VCC_IF
(2.7Vdc)
37
VCC_TRIP
(2.7Vdc)
47
VCC_DIV
(2.7Vdc)
34
VCC_MIX
(2.7Vdc)
15
VDD_LNA
(2.7Vdc)
11
VDDD
(1.35Vdc)
1
VDD_PLL
(1.35Vdc)
7
Typical Power Consumption (Watts)
67
0.60
0.01
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC6001
v02.0514
Millimeterwave Receiver IC
57 - 64 GHz
75
75
70
70
65
60
65
60
55
57.2
58.3
59.4
60.5
61.6
62.6
55
57.2
63.7
58.3
FREQUENCY (GHz)
59.4
60.5
61.6
62.6
63.7
62.6
63.7
62.6
63.7
FREQUENCY (GHz)
Min bias
Typical bias
Max bias
+25C
+85C
-40C
Figure 3. Noise Figure vs. Gain @
60.48GHz[2]
Figure 4. Noise Figure vs.
Frequency Over Temperature[1]
10
40
8
30
NOISE FIGURE (dB)
NOISE FIGURE (dB)
35
25
20
15
10
6
mmWAVE RECEIVER - CHIP
Figure 2. Gain vs.
Frequency Over Temperature[1]
GAIN (dB)
GAIN (dB)
Figure 1. Gain vs.
Frequency Across Voltage[1]
4
2
5
0
57.2
0
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
58.3
0dB BB Attn
6dB BB Attn
12dB BB Attn
18dB BB Attn
59.4
60.5
61.6
FREQUENCY (GHz)
IF ATTENUATION SETTING
24dB BB Attn
30dB BB Attn
36dB BB Attn
Figure 5. Noise Figure vs.
Frequency Across Voltage[1]
+25C
+85C
-40C
Figure 6. Input P1dB vs.
Frequency Across Voltage[1]
-30
10
IP1dB (dBm)
NOISE FIGURE (dB)
8
6
4
-35
-40
2
0
57.2
58.3
59.4
60.5
61.6
FREQUENCY (GHz)
Min bias
Typical bias
Max bias
62.6
63.7
-45
57.2
58.3
59.4
60.5
61.6
FREQUENCY (GHz)
Min bias
Typical bias
Max bias
[1] Maximum gain setting
[2] Fine BB Attn = 0dB
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
4
HMC6001
v02.0514
Millimeterwave Receiver IC
57 - 64 GHz
Figure 7. Input P1dB vs.
Frequency Over Temperature[1]
Figure 8. Input P1dB vs.
Frequency and Gain
-30
-35
IP1dB (dBm)
IP1dB (dBm)
-35
-40
-45
-40
-50
-45
57.2
58.3
59.4
60.5
61.6
62.6
-55
57.2
63.7
58.3
59.4
FREQUENCY (GHz)
60.5
61.6
62.6
63.7
FREQUENCY (GHz)
IF Attn=min, BB Attn=5dB
IF Attn=min, BB Attn=max
IF Attn=max, BB Attn=5dB
IF Attn=max, BB Attn=max
+25C
+85C
-40C
Figure 10. Input IP3 vs.
Frequency Over Temperature[1]
Figure 9. Input IP3 vs.
Frequency Across Voltage[1]
-10
-20
-15
IIP3 (dBm)
-25
IIP3 (dBm)
mmWAVE RECEIVER - CHIP
-30
-30
-20
-25
-30
-35
-35
-40
57.2
58.3
59.4
60.5
61.6
62.6
63.7
-40
57.2
58.3
59.4
60.5
Min bias
Typical bias
Max bias
Figure 11. Input IP3 vs. Gain @
GHz[2]
61.6
62.6
63.7
FREQUENCY (GHz)
FREQUENCY (GHz)
+25C
+85C
-40C
60.48
Figure 12. Baseband
Attenuation Over Temperature
0
0
-5
-5
-10
ATTENUATION (dB)
IIP3 (dBm)
-15
-20
-25
-30
-35
-40
-45
-10
-15
-20
-25
-30
-35
-50
-40
-55
-60
-45
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
IF ATTENUATION SETTING
0dB BB Attn
6dB BB Attn
12dB BB Attn
18dB BB Attn
1
6
11
16
21
26
31
36
41
BASEBAND SETTING (dB)
24dB BB Attn
30dB BB Attn
36dB BB Attn
+25C
+85C
-40C
[1] Maximum gain setting
[2] Fine BB Attn = 0dB
5
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC6001
v02.0514
Millimeterwave Receiver IC
57 - 64 GHz
0
0
-5
-5
-10
-15
-20
-25
-10
-15
-20
-25
-30
-30
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
0
1
2
3
IF ATTENUATION SETTING
4
5
57.24 GHz
60.48 GHz
63.72 GHz
0
0
-3
-6
-6
-12
-15
-18
-21
-15
-18
-21
-24
-27
500
700
-30
100
900 1100 1300 1500 1700 1900 2100
300
500
700
Min bias
Typical bias
Max bias
Figure 18. Single Sided
Passband Response vs. Frequency[5]
0
0
-3
-6
-6
ATTENUATION (dB)
ATTENUATION (dB)
+25C
+85C
-40C
-3
-9
-12
-15
-18
-21
-9
-12
-15
-18
-21
-24
-24
-27
-27
-30
100
300
500
700
900 1100 1300 1500 1700 1900 2100
FREQUENCY OFFSET (MHz)
Min Gain
Mid Gain
Max Gain
900 1100 1300 1500 1700 1900 2100
FREQUENCY OFFSET (MHz)
FREQUENCY OFFSET (MHz)
Figure 17. Single Sided
Passband Response vs. IF Gain[4]
10 11 12 13 14 15
-9
-27
300
9
-12
-24
-30
100
8
Figure 16. Single Sided
Passband Response vs. Temperature[4]
-3
-9
7
+25C
+85C
-40C
ATTENUATION (dB)
ATTENUATION (dB)
Figure 15. Single Sided
Passband Response vs. Voltage[4]
6
IF ATTENUATION SETTING
mmWAVE RECEIVER - CHIP
Figure 14. IF Attenuation vs.
Attenuator Setting over Temperature[3]
ATTENUATION (dB)
ATTENUATION (dB)
Figure 13. IF Attenuation vs.
Attenuator Setting vs Frequency
-30
100
300
500
700
900 1100 1300 1500 1700 1900 2100
FREQUENCY OFFSET (MHz)
57.24 GHz
60.48 GHz
63.72 GHz
[3] 60.48 GHz Carrier
[4] 60.48 GHz Carrier, Maximum BW
[5] Maximum BW
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
6
HMC6001
v02.0514
Millimeterwave Receiver IC
57 - 64 GHz
0
0
-5
-6
-10
ATTENUATION (dB)
ATTENUATION (dB)
Figure 20. Single Sided High Pass Filter
Response vs. HPF Setting[3]
-3
-9
-12
-15
-18
-21
-15
-20
-25
-30
-35
-40
-24
-45
-27
-50
-30
100
300
500
700
-55
0.3
900 1100 1300 1500 1700 1900 2100
0.5
0.8
FREQUENCY OFFSET (MHz)
1
1.3
1.5
1.8
2.7
3
50
SIDEBAND SUPPRESSION (dBc)
-10
-15
-20
-25
-30
-35
-40
-45
-50
0.5
0.8
1
1.3
1.5
1.8
2
2.2
2.5
2.7
40
30
20
10
0
57.2
3
58.3
59.4
60.5
61.6
62.6
63.7
FREQUENCY (GHz)
FREQUENCY OFFSET (MHz)
Min bias
Typical bias
Max bias
+25C
+85C
-40C
Figure 23. Sideband Suppression
vs. Frequency over Temperature[1]
Figure 24. Sideband Suppression
vs. Frequency and IF Gain
50
SIDEBAND SUPPRESSION (dBc)
50
SIDEBAND SUPPRESSION (dBc)
2.5
Figure 22. Sideband Suppression
vs. Frequency across Voltage[1]
0
-5
40
30
20
10
0
57.2
2.2
800 kHz
1.0 MHz
1.5 MHz
Figure 21. Single Sided High Pass Filter
Response vs Temperature[6]
-55
0.3
2
FREQUENCY OFFSET (MHz)
Min BW
Mid BW
Max BW
ATTENUATION (dB)
mmWAVE RECEIVER - CHIP
Figure 19. Single Sided
Passband Response BW vs. BW Setting[3]
58.3
59.4
60.5
61.6
FREQUENCY (GHz)
+25C
+85C
-40C
62.6
63.7
40
30
20
10
0
57.2
58.3
59.4
60.5
61.6
62.6
63.7
FREQUENCY (GHz)
Min Gain
Mid Gain
Max Gain
[1] Maximum gain setting
[3] 60.48 GHz Carrier
[6] 60.48 GHz Carrier, 1.5MHz HPF Setting
7
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC6001
v02.0514
Millimeterwave Receiver IC
57 - 64 GHz
2
25
2
25
1
20
1
20
0
15
0
15
-1
10
-1
10
-2
5
-2
5
0
0
1e-5
2e-5
3e-5
0
1e-5
2e-5
3e-5
4e-5
TIME (SEC)
TIME (SEC)
I data
Q data
Amp Envelope
0
-3
4e-5
I data
Q data
Amp Envelope
I/Q Phase Delta
Figure 27. I/Q Amplitude and Phase
ing IF Attenuator change[9]
I/Q Phase Delta
dur30
2
25
1
20
0
15
-1
10
-2
5
PHASE DELTA (DEGREES)
3
mmWAVE RECEIVER - CHIP
30
AMPLITUDE (VOLTS)
3
PHASE DELTA (DEGREES)
30
-3
AMPLITUDE (VOLTS)
Figure 26. I/Q Amplitude and Phase during
Coarse Baseband Attenuator change[8]
3
PHASE DELTA (DEGREES)
AMPLITUDE (VOLTS)
Figure 25. I/Q Amplitude and Phase during
Fine Baseband Attenuator change[7]
0
-3
0
1e-5
2e-5
3e-5
4e-5
TIME (SEC)
I data
Q data
Amp Envelope
I/Q Phase Delta
[7] 60.48 GHz Carrier, fine baseband attenuator change from 0 to 5dB
[8] 60.48 GHz Carrier, coarse baseband attenuator change from 12 to 24dB
[9] 60.48 GHz Carrier, IF attenuator change from setting 0 to 7
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
8
HMC6001
v02.0514
Millimeterwave Receiver IC
57 - 64 GHz
mmWAVE RECEIVER - CHIP
Table 5. Absolute Maximum Ratings
RF Input Power
0 dBm
RF DC Input
3.8 Vdc
VDD = 2.7 V
2.85 Vdc
VCC = 2.7 V
2.85 Vdc
VDD_PLL = 1.35 V
1.6 Vdc
VDDD = 1.35 V
1.6 Vdc
GND
0± 50 mV
Power Dissipation
0.760 W
Serial Digital Interface Input Voltage
1.5 Vdc
Ref CLK Input (AC coupled)(each)
0.75 Vp-p
Baseband Outputs (BB, FM)
0.75 Vp-p
Storage Temperature
-55°C to 150°C
Operating Temperature
-40°C to 85°C
Outline Drawing
Table 6. Die Packaging Information
Standard
Alternate
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .028” [0.711] +/- .001” [.025]
3. BOND PAD METALLIZATION: AL
4. Overall die size ± .002 [0.051]
VR-33CC-02-X4 GEL_PAK
[1]
[1] For alternate packaging information contact Hittite Microwave
Corporation.
Table 7. Die Pad Dimensions
9
Pads
Pad Size
Pad Opening
1, 3
0.0043 [0.109] x 0.0043 [0.109]
0.0041 [0.103] x 0.0041 [0.103]
2
0.0028 [0.070] x 0.0024 [0.060]
0.0025 [0.064] x 0.0021 [0.054]
4 - 45
0.0040 [0.101] x 0.0040 [0.101]
0.0037 [0.095] x 0.0037 [0.095]
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC6001
v02.0514
Millimeterwave Receiver IC
57 - 64 GHz
Pad Number
Function
Description
1, 3, 7, 9, 11, 14
16, 18, 21, 22, 24,
26, 28, 30, 31, 35,
36, 41, 45
GND
Analog Ground
2
RFIN
LNA input - AC coupled - matched to 50Ω
4
ENABLE
Serial digital interface enable (1.2V CMOS) - 50kΩ
5
CLK
Serial digital interface clock (1.2V CMOS) - 50kΩ
6
DATA
Serial digital interface data (1.2V CMOS) - 50kΩ
8
VOUT_QM
Baseband negative quadrature output – DC coupled 1.3Vcm - 50Ω
10
VOUT_QP
Baseband positive quadrature output – DC coupled 1.3Vcm - 50Ω
12
VDDD
1.35 supply (serial data interface)
13
VCC_BUF
2.7V supply (BB VGA and output buffers)
15
VOUT_IM
Baseband negative in-phase output – DC coupled 1.3Vcm - 50Ω
17
VOUT_IP
Baseband positive in-phase output – DC coupled 1.3Vcm - 50Ω
19
SCANOUT
Serial digital interface out (1.2V CMOS) - 50kΩ
20
RESET
Asynchronous reset-all registers (1.2V CMOS, active high) - 50kΩ
23
VDD_PLL
1.35 supply (VCO)
25
REFCLKM
Xtal REF CLK Minus - AC or DC coupled - 50Ω
27
REFCLKP
Xtal REF CLK Minus - AC or DC coupled - 50Ω
29
VCC_REG
2.7V supply (VCO)
32, 33, 38, 39, 43
NC
Factory test points. Leave floating. Do not connect.
34
VCC_DIV
2.7V supply (Divider)
37
VCC_TRIP
2.7V supply (Tripler)
40
VCC_IF
2.7V supply (IF)
42
VCC_MIX
2.7V supply (Mixer)
44
VCC_LNA
2.7V supply (LNA)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
mmWAVE RECEIVER - CHIP
Table 8. Pad Descriptions
10
HMC6001
v02.0514
Millimeterwave Receiver IC
57 - 64 GHz
mmWAVE RECEIVER - CHIP
Theory of Operation
An integrated frequency synthesizer creates a low-phase noise LO between 16.3 and 18.3 GHz. The step size of
the synthesizer equates to 540MHz steps at RF when used with 308.5714 MHz reference crystal (compatible with
the IEEE channels of the ISM band) or 500 MHz steps if used with a 285.714 MHz reference crystal. A 57 to 64 GHz
signal enters the chip through a single-ended LNA input. The LO is multiplied by three and mixed with the LNA output
to downconvert to an 8 to 9.1 GHz sliding IF. An integrated notch filter removes the image frequency. The IF signal
is filtered and amplified with 17 dB of variable gain. If the chip is configured for IQ baseband output, the IF signal is
feds into a quadrature demodulator using the LO/2 to downconvert to baseband. There are also options to use onchip demodulators capabable of to demodulating AM/FM/FSK/MSK waveforms. Contact Hittite application support
for further guidance and application notes if interested in these modes.
The phase noise and quadrature balance of the HMC6001 is sufficient to demodulate up to 16QAM modulation for
high data rate operation.
There are no special power sequencing requirements for the HMC6001; all voltages are to be applied simultaneously.
Register Array Assignments and Serial Interface
The register arrays for both the receiver and transmitter are organized into 16 rows of 8 bits. Using the serial interface,
the arrays are written or read one row at a time as shown in Figure 28 and Figure 29, respectively. Figure 28 shows
the sequence of signals on the ENABLE, CLK, and DATA lines to write one 8-bit row of the register array. The ENABLE
line goes low, the first of 18 data bits (bit 0) is placed on the DATA line, and 2 ns or more after the DATA line stabilizes,
the CLK line goes high to clock in data bit 0. The DATA line should remain stable for at least 2 ns after the rising edge
of CLK.
The Rx IC will support a serial interface running up to several hundred MHz, and the interface is 1.2V CMOS levels.
A write operation requires 18 data bits and 18 clock pulses, as shown in Figure 29. The 18 data bits contain the 8-bit
register array row data (LSB is clocked in first), followed by the register array row address (ROW0 through ROW15,
000000 to 001111, LSB first), the Read/Write bit (set to 1 to write), and finally the Rx chip address 111, LSB first).
Note that the register array row address is 6 bits, but only four are used to designate 16 rows, the two MSBs are 0.
After the 18th clock pulse of the write operation, the ENABLE line returns high to load the register array on the IC; prior
to the rising edge of the ENABLE line, no data is written to the array. The CLK line should have stabilized in the low
state at least 2 ns prior to the rising edge of the ENABLE line.
Figure 28. Timing Diagram for writing a row of the Receiver Serial Interface
11
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC6001
v02.0514
Figure 29. Timing Diagram for reading a row of the Receiver Serial Interface
mmWAVE RECEIVER - CHIP
Millimeterwave Receiver IC
57 - 64 GHz
Table 9. Receiver Register Array Assignments
Register Array Row & Bit
Internal Signal Name
Signal Function
ROW0
ROW0<7>
ask_pwrdn
Active high to power down ASK demodulator
ROW0<6>
bbamp_pwrdn_i
Active high to power down I-channel baseband amplifier
ROW0<5>
bbamp_pwrdn_q
Active high to power down Q-channel baseband amplifier
ROW0<4>
divider_pwrdn
Active high to power down local oscillator divider
if_bgmux_pwrdn
Active high to power down one of three on-chip bandgap refs (IF) and
associated mux
ROW0<3>
ROW0<2>
ifmix_pwrdn_i
Active high to power down I-channel IF to baseband mixer
ROW0<1>
ifmix_pwrdn_q
Active high to power down Q-channel IF to baseband mixer
ROW0<0>
ifvga_pwrdn
Active high to power down IF variable gain amplifier
ROW1
ROW1<7>
ipc_pwrdn
Active high to power down on chip current reference generator
ROW1<6>
lna_pwrdn
Active high to power down low noise amplifier and reference
ROW1<5>
rfmix_pwrdn
Active high to power down RF to IF mixer
ROW1<4>
tripler_pwrdn
Active high to power down frequency tripler
ROW1<3>
bbamp_atten1_0
ROW1<2>
bbamp_atten1_1
First baseband attenuator;
ROW1<2:3> =
11 is 18 dB attenuation
10 is 12 dB attenuation
01 is 6 dB attenuation
00 is 0 dB attenuation
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
12
HMC6001
v02.0514
Millimeterwave Receiver IC
57 - 64 GHz
Table 9. Receiver Register Array Assignments
mmWAVE RECEIVER - CHIP
Register Array Row & Bit
Internal Signal Name
Signal Function
Second baseband attenuator;
ROW1<1>
bbamp_atten2_0
ROW1<0>
bbamp_atten2_1
ROW1<0:1> =
11 is 18 dB attenuation
10 is 12 dB attenuation
01 is 6 dB attenuation
00 is 0 dB attenuation
ROW2
ROW2<7>
bbamp_attenfi_0
ROW2<6>
bbamp_attenfi_1
ROW2<5>
bbamp_attenfi_2
ROW2<4>
bbamp_attenfq_0
I Channel baseband fine attenuator;
ROW2<5:7> ≥
101 is 5 dB attenuation
100 is 4 dB attenuation
011 is 3 dB attenuation
010 is 2 dB attenuation
001 is 1 dB attenuation
000 is 0 dB attenuation
Q Channel baseband fine attenuator;
ROW2<2:4> ≥
101 is 5 dB attenuation
100 is 4 dB attenuation
011 is 3 dB attenuation
010 is 2 dB attenuation
001 is 1 dB attenuation
000 is 0 dB attenuation
ROW2<3>
bbamp_attenfq_1
ROW2<2>
bbamp_attenfq_2
ROW2<1>
bbamp_selask
Active high to multiplex the AM detector output into the I channel baseband
amplifier input
ROW2<0>
bbamp_sigshort
Active high to short the input to the I and Q channel baseband amplifiers
ROW3
ROW3<7>
bbamp_selbw0
ROW3<6>
bbamp_selbw1
ROW3<5>
bbamp_selfastrec
ROW3<4>
bbamp_selfastrec2
Selects the low pass corner of the baseband amplifiers;
ROW3<6:7> =
00 is ≈ 1.4 GHz
01 is ≈ 500 MHz
10 is ≈ 300 MHz
11 is ≈ 200 MHz
Selects the high pass corner of the baseband amplifiers;
ROW3<4:5> =
00 is ≈ 800 kHz
01 is ≈ 1 MHz
10 is ≈ 1.5 MHz
ROW3<3>
bg_monitor_sel<1>
ROW3<2>
bg_monitor_sel<0>
These bits are for reserved for diagnostic purposes;
ROW3<1>
if_refsel
ROW3<3:0> = 0011 for normal operation
ROW3<0>
lna_refsel
ROW4
13
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC6001
v02.0514
Millimeterwave Receiver IC
57 - 64 GHz
Table 9. Receiver Register Array Assignments
ROW4<7>
Internal Signal Name
Signal Function
ifvga_bias<2>
ROW4<6>
ifvga_bias<1>
ROW4<5>
ifvga_bias<0>
ROW4<4>
ifvga_tune<4>
These bits are for biasing and IF filter alignment in the IF variable gain amplifier;
ROW4<3>
ifvga_tune<3>
ROW4<7:0> = 1001111x for normal operation
ROW4<2>
ifvga_tune<2>
ROW4<1>
ifvga_tune<1>
ROW4<0>
not used
ROW5
ROW5<7>
ifvga_vga_adj<3>
ROW5<6>
ifvga_vga_adj<2>
ROW5<5>
ifvga_vga_adj<1>
ROW5<4>
ifvga_vga_adj<0>
ROW5<3>
rfmix_tune<4>
IF variable gain amplifier gain control bits;
ROW5<7:4> = 0000 is highest gain
1111 is lowest gain
Attenuation is ≈ 1 dB / step, ≈ 20 dB maximum
ROW5<2>
rfmix_tune<3>
These bits control IF filter alignment in the RF mixer;
ROW5<1>
rfmix_tune<2>
ROW5<3:0> = 1111 for normal operation
ROW5<0>
rfmix_tune<1>
ROW6
ROW6<7>
tripler_bias<13>
ROW6<6>
tripler_bias<12>
ROW6<5>
tripler_bias<11>
ROW6<4>
tripler_bias<10>
These bits control the biasing of the frequency tripler;
ROW6<3>
tripler_bias<9>
ROW6<7:0> = 10111111 for normal operation
ROW6<2>
tripler_bias<8>
ROW6<1>
tripler_bias<7>
ROW6<0>
tripler_bias<6>
mmWAVE RECEIVER - CHIP
Register Array Row & Bit
ROW7
ROW7<7>
tripler_bias<5>
ROW7<6>
tripler_bias<4>
ROW7<5>
tripler_bias<3>
These bits control the biasing of the frequency tripler;
ROW7<4>
tripler_bias<2>
ROW7<7:2> = 011011 for normal operation
ROW7<3>
tripler_bias<1>
ROW7<2>
tripler_bias<0>
ROW7<1>
bbamp_selfm
Active high to multiplex the FM detector output into the Q channel baseband
amplifier input
ROW7<0>
fm_pwrdn
Active high to power down FM demodulator
ROW8
ROW8<7>
lna_bias<2>
ROW8<6>
lna_bias<1>
ROW8<5>
lna_bias<0>
These bits control biasing of the low noise amplifier;
ROW8<7:5> = 100 for normal operation
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
14
HMC6001
v02.0514
Millimeterwave Receiver IC
57 - 64 GHz
Table 9. Receiver Register Array Assignments
mmWAVE RECEIVER - CHIP
Register Array Row & Bit
Internal Signal Name
ROW8<4>
not used
ROW8<3>
not used
ROW8<2>
ifvga_q_cntrl<2>
Signal Function
ROW8<4:3> = xx - not used
These bits control the Q of the IF filter in the IF variable gain amplifier;
ROW8<2:0> = 000 for highest Q and highest gain.
ROW8<1>
ifvga_q_cntrl<1>
ROW8<0>
ifvga_q_cntrl<0>
To reduce Q and widen bandwidth, increment ROW8<2:0> in the sequence:
001
100
101
111
ROW9
ROW9<7>
not used
ROW9<6>
not used
ROW9<5>
not used
ROW9<4>
not used
ROW9<3>
not used
ROW9<2>
not used
ROW9<1>
not used
ROW9<0>
not used
ROW9<7:0> = xxxxxxxx - not used
ROW10
ROW10<7>
RDACIN<5>
ROW10<6>
RDACIN<4>
ROW10<5>
RDACIN<3>
ROW10<4>
RDACIN<2>
ROW10<3>
RDACIN<1>
ROW10<2>
RDACIN<0>
ROW10<1>
SYNRESET
ROW10<1> = 0 for normal operation
ROW10<0>
DIVRATIO<4>
ROW10<0>
Control the synthesizer divider ratio and output frequency. Refer to Tables 10
and 11 for synthesizer control details
VCO amplitude adjustment DAC;
ROW10<7:2> = 111100 for normal operation
ROW11
ROW11<7>
DIVRATIO<3>
ROW11<6>
DIVRATIO<2>
ROW11<5>
DIVRATIO<1>
ROW11<4>
DIVRATIO<0>
ROW11<3>
BAND<2>
ROW11<3:1>
ROW11<2>
BAND<1>
ROW11<1>
BAND<0>
Control the VCO band, and must be changed when tuning the synthesizer
output frequency. Refer to Tables 10 and 11 for synthesizer control details.
ROW11<0>
REFSELDIV
ROW11<7:4>
Control the synthesizer divider ratio and output frequency. Refer to Tables 10
and 11 for synthesizer control details.
These bits are for reserved for diagnostic purposes;
ROW11<0> = 1 for normal operation
ROW12
15
ROW12<7>
CPBIAS<2>
ROW12<6>
CPBIAS<1>
ROW12<5>
CPBIAS<0>
These bits control the synthesizer charge pump bias.
ROW12<7:5> = 010 for normal operation
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC6001
v02.0514
Millimeterwave Receiver IC
57 - 64 GHz
Table 9. Receiver Register Array Assignments
Internal Signal Name
Signal Function
ROW12<4>
VRSEL<3>
ROW12<3>
VRSEL<2>
These bits control the width of the lock window for the synthesizer lock detector.
ROW12<2>
VRSEL<1>
ROW12<4:1> = 1111 specifies the widest lock window for normal operation
ROW12<1>
VRSEL<0>
ROW12<0>
REFSELVCO
This bit is reserved for diagnostic purposes;
ROW12<0> = 1 for normal operation
ROW13
This bit is reserved for diagnostic purposes;
ROW13<7>
MUXREF
ROW13<6>
DIV4
ROW13<6> = 0 for normal operation
ROW13<5>
ENDC
Active high to enable DC coupling on synthesizer reference input;
ROW13<5> = 0 for normal operation
ROW13<4>
INI
This bit is reserved for diagnostic purposes;
ROW13<4> = 0 for normal operation
ROW13<7> = 1 for normal operation
ROW13<3>
PDDIV12
Active high to power down 1.2V circuits in synthesizer divider
ROW13<2>
PDDIV27
Active high to power down 2.7V circuits in synthesizer divider
ROW13<1>
PDQP
Active high to power down synthesizer charge pump
ROW13<0>
PDVCO
Active high to power down synthesizer VCO
ROW14<7>
PDCAL
Active high to power down VCO calibration comparators;
ROW14<7> = 0 for normal operation
ROW14<6>
MUXOUT
Controls multiplexing of diagnostic bits, high to read Row15<7:0>
ROW14<6> = 1 for normal operation
ROW14<5>
PDALC12
Active high to power down VCO automatic level control (ALC);
ROW14<5> = 1 for normal operation
ROW14<4>
PLOAD
mmWAVE RECEIVER - CHIP
Register Array Row & Bit
ROW14
ROW14<3>
WIDE<1>
ROW14<2>
WIDE<0>
ROW14<1>
SLEW<1>
ROW14<0>
SLEW<0>
Active high to load external amplitude adjustment bits for VCO
ROW14<4> = 1 for normal operation
Control bits for VCO ALC loop;
ROW14<3:2> = 01 for normal operation
Controls slew rate in sub-integer N divider
ROW14<1:0> = 10 for normal operation
ROW15
ROW15<7>
COMPP
ROW15<6>
COMPN
ROW15<5>
RDACMSB<2>
ROW15<4>
RDACMSB<1>
ROW15<3>
RDACMSB<0>
ROW15<2>
RDACMUX<0>
ROW15<1>
RDACMUX<1>
ROW15<0>
RDACMUX<2>
Read only bits to indicate synthesizer lock:
ROW15<7:6> = 01 indicates that the VCO control voltage is within the lock
window and the synthesizer is locked.
11 indicates the VCO control voltage above lock window 00 below lock window
10 is a disallowed state indicating an error
These bits are read only and reserved for factory diagnostic purposes.
These bits are read only and reserved for factory diagnostic purposes.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
16
HMC6001
v02.0514
Millimeterwave Receiver IC
57 - 64 GHz
Synthesizer Settings
Table 10. IEEE Channels Using 308.5714 MHz Reference
mmWAVE RECEIVER - CHIP
Frequency (GHz)
Divider Setting
Typical Band Setting
57.24
10101
001
57.78
10100
001
58.32 (IEEE CH 1)
10011
010
58.86
10010
010
011
59.40
10001
59.94
10000
011
60.48 (IEEE CH 2)
11111
100
61.02
00000
100
61.56
00001
101
62.10
00010
101
62.64 (IEEE CH 3)
00011
110
63.18
00100
110
63.72
00101
111
Divide Ratio settings consist of registers ROW10 bit <0> (MSB) and ROW11 bits <4:7> (4 LSBs)
Table 11. 500 MHz Channels Using 285.7143 MHz Reference
Frequency (GHz)
Divider Setting
Typical Band Setting
57
00001
000
57.5
00010
000
58
00011
001
58.5
00100
001
59
00101
010
59.5
00110
010
60
00111
011
60.5
01000
011
61
01001
100
61.5
01010
100
62
01011
101
62.5
01100
101
63
01101
110
63.5
01110
110
64
01111
111
Divide Ratio settings consist of registers ROW10 bit <0> (MSB) and ROW11 bits <4:7> (4 LSBs)
17
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC6001
v02.0514
Millimeterwave Receiver IC
57 - 64 GHz
Table 12. Pad Descriptions
Function
Pad Description
8, 10,13,15
VOUT_QM
VOUT_QP
VOUT_IM
VOUT_IP
Pads are DC Coupled,
matched to 50Ω (100Ω
differential)
25, 27
REFLKM
REFCLKP
Pads are AC or DC coupled.
matched to 50Ω (100Ω
differential)
2
RFIN
Pad is AC Coupled, matched
to 50Ω
Interface Schematic
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
mmWAVE RECEIVER - CHIP
Item
18
HMC6001
v02.0514
Millimeterwave Receiver IC
57 - 64 GHz
mmWAVE RECEIVER - CHIP
Table 13. Evaluation Kit Order Options
19
Item
Part Number
Description
1
EKIT01-HMC6450
60 GHz Antenna in Package Transceiver Evaluation Kit
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC6001
v02.0514
Millimeterwave Receiver IC
57 - 64 GHz
The die should be attached directly to the ground plane with conductive epoxy (see HMC general Handling, Mounting,
Bonding Note).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD
protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry
nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias
cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a sharp pair of bent tweezers or use a top side vacuum tool
to pick and place. The surface should not be touched with tweezers or fingers.
Mounting
The chip should be mounted with electrically conductive epoxy. The mounting surface should be clean and flat.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a fillet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s recommendation.
mmWAVE RECEIVER - CHIP
Mounting & Bonding Techniques for Millimeterwave SiGe Die
Wire Bonding
RF bonds made with 0.003” (0.076mm) x 0.0005” (0.012mm) ribbon are recommended and should be thermosonically
bonded. DC bonds of 0.001” (0.025 mm) diameter are recommended and should also be thermosonically bonded.
All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy
should be applied to achieve reliable bonds. All bonds should be as short as possible.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
20