e8817a28467e8bac63f3fe7557289761

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Transistors
JC(T
BC857S
DUAL TRANSISTOR (PNP+PNP)
SOT-363
FEATURES
Two transistors in one package
z
z
Reduces number of components and board space
No mutual interference between the transistors
z
MARKING: 3C
MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector- Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-45
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-0.2
A
PC
Collector Power Dissipation
0.3
W
RθJA
Thermal Resistance from Junction to Ambient
417
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
stg
℃/W
ELECTRICAL CHARACTERISTICS(Ta= 25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
M ax
Unit
Collector-base breakdown voltage
V(BR)CBO
Ic=-10µA,IE=0
-50
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic=-10mA,IB=0
-45
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-10µA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-30V,IE=0
DC current gain
hFE
VCE=-5V,IC=-2mA
-15
125
nA
630
VCE(sat)(1)
IC=-10mA,IB=-0.5mA
-0.3
V
VCE(sat)(2)
IC=-100mA,IB=-5mA
-0.65
V
-0.75
V
-0.82
V
Collector-emitter saturation voltage
VBE(1)
VCE=-5V,IC=-2mA
VBE(2)
VCE=-5V,IC=-10mA
-0.6
Base-emitter voltage
Transition frequency
fT
Collector output capacitance
Cob
Noise figure
NF
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VCE=-5V,IC=-10mA,f=100MHz
200
MHz
VCB=-10V,IE=0,f=1MHz
3.5
pF
2.5
dB
VCE=-5V,Ic=-0.2mA,
f=1kHZ,Rs=2KΩ,BW=200Hz
1
E,Mar,2016
Typical Characteristics
hFE
Static Characteristic
-8
COMMON
EMITTER
Ta=25℃
Ta=100℃
-27uA
-6
IC
-24uA
hFE
(mA)
-30uA
-21uA
DC CURRENT GAIN
COLLECTOR CURRENT
—— IC
1000
-18uA
-4
-15uA
-12uA
-9uA
-2
Ta=25℃
100
-6uA
COMMON EMITTER
VCE= -5V
IB=-3uA
-0
-0
-2
-4
-6
COLLECTOR-EMITTER VOLTAGE
VCEsat
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (V)
-1
——
VCE
10
-0.1
-8
-1
(V)
-10
COLLECTOR CURRENT
IC
VBEsat
——
IC
-100
(mA)
IC
-2
-1
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
Ta=25℃
-0.1
Ta=100℃
Ta=25℃
Ta=100℃
β=20
β=20
-0.01
-0.1
-1
-10
COLLECTOR CURRENT
IC
IC
-0.1
-0.1
-100
(mA)
—— VBE
fT
IC
-100
(mA)
IC
——
(MHz)
500
(mA)
Ta=100℃
fT
-10
TRANSITION FREQUENCY
IC
COLLECTOR CURRENT
-10
COLLECTOR CURRENT
-100
Ta=25℃
-1
COMMON EMITTER
VCE=-5V
-0.1
-0.0
-1
-0.3
-0.6
-0.9
100
COMMON EMITTER
VCE=-5V
Ta=25℃
10
-0.1
-1.2
-1
BASE-EMMITER VOLTAGE VBE (V)
Cob/ Cib
-10
COLLECTOR CURRENT
—— VCB/ VEB
PC
400
30
——
IC
-100
(mA)
Ta
f=1MHz
IE=0/IC=0
COLLECTOR POWER DISSIPATION
PC (mW)
10
C
(pF)
Ta=25 ℃
Cib
CAPACITANCE
Cob
1
-0.1
-1
REVERSE VOLTAGE
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-10
VR
300
200
100
0
-20
0
(V)
25
50
75
AMBIENT TEMPERATURE
2
100
Ta
125
150
(℃ )
E,Mar,2016
SOT-363 Package Outline Dimensions
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions In Millimeters
Min
Max
0.900
1.100
0.000
0.100
0.900
1.000
0.150
0.350
0.080
0.150
2.000
2.200
1.150
1.350
2.150
2.450
0.650 TYP
1.200
1.400
0.525 REF
0.260
0.460
0°
8°
Dimensions In Inches
Min
Max
0.043
0.035
0.000
0.004
0.035
0.039
0.006
0.014
0.003
0.006
0.079
0.087
0.045
0.053
0.085
0.096
0.026 TYP
0.047
0.055
0.021 REF
0.010
0.018
0°
8°
SOT-363 Suggested Pad Layout
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3
E,Mar,2016
SOT-363 Tape and Reel
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4
E,Mar,2016