JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N5550 TRANSISTOR (NPN) TO-92 FEATURES z Switching and Amplification in High Voltage z Applications such as Telephony z Low Current(Max. 600mA) High Voltage(Max.160V) z 1.EMITTER 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous PC Collector Power Dissipation Tj Tstg 0.6 A 0.625 W Junction Temperature 150 ℃ Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Symbol Parameter Test conditions Min Typ Max Unit V(BR)CBO IC=100μA,IE=0 160 V V(BR)CEO IC=1mA, IB=0 140 V V(BR)EBO IE=10μA, IC=0 6 V Collector cut-off current ICBO VCB=100V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=4V, IC=0 0.05 μA hFE(1) VCE=5V,IC=1mA 60 hFE(2) VCE=5V,IC =10mA 60 hFE(3) VCE=5V,IC=50mA 20 Collector-base breakdown voltage Collector-emitter voltage breakdown Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage VCEsat Base-emitter saturation voltage VBEsat Transition frequency fT IC= 10mA, IB=1mA IC= 50mA, IB=5mA IC= 10mA, IB=1mA IC= 50mA, IB=5 mA VCE=10V,IC=10mA,,f=100MHz 250 0.15 0.25 1 1.2 100 V V 300 MHz Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 6 pF Noise figure NF VCE=5V,Ic=0.25mA, f=1KHZ,Rs=1kΩ 10 dB www.cj-elec.com 1 C,Dec,2015 Typical Characteristics Static Characteristic 18 80uA 15 COMMON EMITTER VCE=5V COMMON EMITTER Ta=25℃ 60uA 50uA 9 40uA 6 30uA Ta=25℃ 100 IB=20uA 3 0 10 0 2 4 6 8 VBEsat —— 1.0 12 10 COLLECTOR-EMITTER VOLTAGE VCE 1 COLLECTOR CURRENT IC VCEsat —— 0.3 IC 0.8 Ta=25℃ 0.6 Ta=100℃ 0.4 0.2 0.1 200 100 200 IC 0.1 Ta=100℃ Ta=25℃ 0.01 1 10 COLLECTOR CURRENT VBE —— 100 IC 1 200 10 (mA) COLLECTOR CURRENT IC Cob / Cib 100 200 —— IC (mA) VCB / VEB COMMON EMITTER VCE=5V f=1MHz IE=0 / IC=0 CAPACITANCE C Ta=100℃ Ta=25℃ Cib (pF) IC (mA) 100 100 (mA) β=10 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) 10 (V) β=10 COLLECTOR CURRENT Ta=100℃ hFE 70uA 12 DC CURRENT GAIN IC (mA) 90uA COLLECTOR CURRENT hFE —— IC 500 Ta=25℃ 10 1 0.2 0.4 0.6 BASE-EMITTER VOLTAGE fT —— 0.8 Cob 1 0.1 1.0 VBE(V) 10 1 10 REVERSE VOLTAGE IC PC 750 150 —— V 20 (V) Ta VCE=10V TRANSITION FREQUENCY fT COLLECTOR POWER DISSIPATION PC (mW) (MHz) Ta=25℃ 100 50 625 500 375 250 125 0 1 COLLECTOR CURRENT www.cj-elec.com 10 3 IC 20 0 30 25 50 75 AMBIENT TEMPERATURE (mA) 2 100 Ta 125 150 (℃ ) C,Dec,2015 TO-92 Package Outline Dimensions Symbol A A1 b c D D1 E e e1 L Φ h Dimensions In Millimeters Min Max 3.300 3.700 1.100 1.400 0.380 0.550 0.360 0.510 4.300 4.700 3.430 4.300 4.700 1.270 TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 Dimensions In Inches Min Max 0.130 0.146 0.043 0.055 0.015 0.022 0.014 0.020 0.169 0.185 0.135 0.169 0.185 0.050 TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 TO-92 Suggested Pad Layout www.cj-elec.com 3 C,Dec,2015 TO-92 7DSHDQG5HHO ZZZFMHOHFFRP4 C,Dec,2015