JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital Transistors (Built-in Resistors) JC(T EMB3 Dual Digital Transistors (PNP+PNP) SOT-563 FEATURES Two DTA143T chips in a package z z Transistor elements are independent, eliminating interference z Mounting cost and area can be cut in half MARKING: B3 Absolute maximum ratings(Ta=25℃) Parameter Symbol Limits Unit V(BR)CBO -50 V Collector-emitter voltage V(BR)CEO -50 V Emitter-base V(BR)EBO -5 V Collector current IC -100 mA Collector Power dissipation PC 150 mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55~150 ℃ Collector-base voltage voltage Electrical characteristics (Ta=25℃) Parameter Symbol Min. Typ Max. Unit Conditions Collector-base breakdown voltage V(BR)CBO -50 V IC=-50μA Collector-emitter breakdown voltage V(BR)CEO -50 V IC=-1mA Emitter-base breakdown voltage V(BR)EBO -5 V IE=-50μA Collector cut-off current ICBO -0.5 μA VCB=-50V Emitter cut-off current IEBO -0.5 μA VEB=-4V VCE(sat) -0.3 V IC=-5mA,IB=-2.5mA Collector-emitter saturation voltage DC current transfer ratio hFE 100 Input resistance R1 3.29 Transition frequency fT www.cj-elec.com 600 VCE=-5V,IC=-1mA 4.7 6.11 KΩ 250 MHz 1 VCE=10V ,IE=-5mA,f=100MHz C,May,2015 A,Jun,2014 SOT-563 Package Outline Dimensions SOT-563 Suggested Pad Layout www.cj-elec.com 2 C,May,2015 SOT-563 Tape and Reel www.cj-elec.com 3 C,May,2015