JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD JC(T EMB4 Digital Transistors (Built-in Resistors) Dual Digital Transistors (PNP+PNP) SOT-563 FEATURES z Two DTA114T chips in a package Marking: B4 Absolute maximum ratings (Ta=25℃) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -100 mA PC Collector Power Dissipation 150 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-50μA, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-50μA, IC=0 -5 V Collector cut-off current ICBO VCB=-50V, IE=0 -0.5 μA Emitter cut-off current IEBO VEB=-4V, IC=0 -0.5 μA DC current gain hFE VCE=-5V, IC=-1mA Collector-emitter saturation voltage VCE(sat) Transition frequency fT Intput resistance R1 www.cj-elec.com 100 600 IC=-10mA, IB=-1mA -0.3 VCE=-10V, IC=-5mA, f=100MHz - 1 250 7 V MHz 13 Ω A,Jun,2014 C,May,2015 SOT-563 Package Outline Dimensions SOT-563 Suggested Pad Layout www.cj-elec.com 2 C,May,2015 SOT-563 Tape and Reel www.cj-elec.com 3 C,May,2015