JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD JC(T EMD6 Digital Transistors (Built-in Resistors) Dual Digital Transistors (NPN+PNP) SOT-563 FEATURES z DTA143T(PNP) and DTC143T(NPN) transistors are built-in a package. z Transistor elements are independent, eliminating interference. Mounting cost and area can be cut in half. z 1 MARKING:D6 Absolute maximum ratings(Ta=25℃) Parameter Symbol Limits Unit V(BR)CBO 50 V Collector-emitter voltage V(BR)CEO 50 V Emitter-base V(BR)EBO 5 V Collector current IC 100 mA Collector Power dissipation PC 150 mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55~150 ℃ Collector-base voltage voltage Electrical characteristics (Ta=25℃) Parameter Symbol Min. Typ Max. Unit Conditions Collector-base breakdown voltage V(BR)CBO 50 V IC=50μA Collector-emitter breakdown voltage V(BR)CEO 50 V IC=1mA Emitter-base breakdown voltage V(BR)EBO 5 V IE=50μA Collector cut-off current ICBO 0.5 μA VCB=50V Emitter cut-off current IEBO 0.5 μA VEB=4V VCE(sat) 0.3 V IC=5mA,IB=0.25mA Collector-emitter saturation voltage DC current transfer ratio hFE 100 Input resistance R1 3.29 Transition frequency fT www.cj-elec.com 600 4.7 250 1 6.11 VCE=5V,IC=1mA KΩ MHz VCE=10V ,IE=-5mA,f=100MHz D,May,2015 Typical Characteristics DTC143T(NPN) hFE Static Characteristic 1000 (mA) 8 COMMON EMITTER Ta=25℃ 50uA IC —— o Ta=100 C hFE 45uA 40uA DC CURRENT GAIN COLLECTOR CURRENT 10 IC 12 35uA 30uA 6 25uA 20uA 4 o Ta=25 C 100 15uA 2 10uA IB=5uA 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE BASE-EMITTER SATURATION VOLTAGE VBEsat (V) —— (V) VCE=5V 1 10 COLLECTOR CURRENT IC VCEsat 1 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) VBEsat 100 VCE 10 0.1 6 10 Ta=25℃ Ta=100℃ 1 IC 100 (mA) IC —— Ta=100℃ 0.1 Ta=25℃ β=20 β=20 0.1 0.01 1 10 100 COLLECTOR CURRENT VBE 100 —— IC 1 10 100 COLLECTOR CURRENT (mA) IC 100 Cob/ Cib —— IC (mA) VCB/ VEB f=1MHz IE=0/ IC=0 o (pF) 10 Cib 10 C Ta=100℃ Ta=25℃ CAPACITANCE COLLCETOR CURRENT IC (mA) Ta=25 C 1 Cob 1 VCE=5V 0.1 0.1 1 BASE-EMMITER VOLTAGE PC COLLECTOR POWER DISSIPATION PC (mW) 200 —— 0.1 0.1 10 VBE 1 REVERSE VOLTAGE (V) 10 V 20 (V) Ta 150 100 50 0 0 25 50 75 AMBIENT TEMPERATURE www.cj-elec.com 100 Ta 125 150 (℃ ) 2 D,May,2015 Typical Characteristics DTA143T (PNP) hFE Static Characteristic 1000 -10 COMMON EMITTER Ta=25℃ -36uA -28uA -6 DC CURRENT GAIN COLLECTOR CURRENT hFE -32uA -24uA -20uA -4 -16uA -12uA o Ta=25 C 100 -2 -8uA VCE=-5V IB=-4uA -0 -0 -1 -2 -3 -4 -5 COLLECTOR-EMITTER VOLTAGE —— VCE 10 -0.1 -6 (V) -1 -10 COLLECTOR CURRENT IC VCEsat -1 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) VBEsat -100 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) o Ta=100 C -8 IC (mA) -40uA IC —— -10 Ta=25℃ Ta=100℃ -1 IC -100 (mA) IC —— Ta=100℃ -0.1 Ta=25℃ β=20 β=20 -0.1 -0.01 -1 -10 --100 COLLECTOR CURRENT VBE -100 —— IC -1 -10 -100 COLLECTOR CURRENT (mA) IC 100 Cob/ Cib —— IC (mA) VCB/ VEB f=1MHz IE=0/ IC=0 o (pF) -10 Ta=25℃ -1 VCE=-5V -0.1 -0.1 -1 PC COLLECTOR POWER DISSIPATION PC (mW) —— VBE Cob 1 0.1 -0.1 -10 BASE-EMMITER VOLTAGE 200 Cib 10 C Ta=100℃ CAPACITANCE COLLCETOR CURRENT IC (mA) Ta=25 C -1 REVERSE VOLTAGE (V) -10 V -20 (V) Ta 150 100 50 0 0 25 50 75 AMBIENT TEMPERATURE www.cj-elec.com 100 Ta 125 150 (℃ ) 3 D,May,2015 SOT-563 Package Outline Dimensions SOT-563 Suggested Pad Layout www.cj-elec.com 4 D,May,2015 SOT-563 Tape and Reel www.cj-elec.com 5 D,May,2015