0867721e7209601c723d0e4ca706b0c9

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
EMD6
Digital Transistors (Built-in Resistors)
Dual Digital Transistors (NPN+PNP)
SOT-563
FEATURES
z
DTA143T(PNP) and DTC143T(NPN) transistors are built-in a package.
z
Transistor elements are independent, eliminating interference.
Mounting cost and area can be cut in half.
z
1
MARKING:D6
Absolute maximum ratings(Ta=25℃)
Parameter
Symbol
Limits
Unit
V(BR)CBO
50
V
Collector-emitter voltage
V(BR)CEO
50
V
Emitter-base
V(BR)EBO
5
V
Collector current
IC
100
mA
Collector Power dissipation
PC
150
mW
Junction temperature
Tj
150
℃
Storage temperature
Tstg
-55~150
℃
Collector-base
voltage
voltage
Electrical characteristics (Ta=25℃)
Parameter
Symbol
Min.
Typ
Max.
Unit
Conditions
Collector-base breakdown voltage
V(BR)CBO
50
V
IC=50μA
Collector-emitter breakdown voltage
V(BR)CEO
50
V
IC=1mA
Emitter-base breakdown voltage
V(BR)EBO
5
V
IE=50μA
Collector cut-off current
ICBO
0.5
μA
VCB=50V
Emitter cut-off current
IEBO
0.5
μA
VEB=4V
VCE(sat)
0.3
V
IC=5mA,IB=0.25mA
Collector-emitter saturation voltage
DC current transfer ratio
hFE
100
Input resistance
R1
3.29
Transition frequency
fT
www.cj-elec.com
600
4.7
250
1
6.11
VCE=5V,IC=1mA
KΩ
MHz
VCE=10V ,IE=-5mA,f=100MHz
D,May,2015
Typical Characteristics
DTC143T(NPN)
hFE
Static Characteristic
1000
(mA)
8
COMMON
EMITTER
Ta=25℃
50uA
IC
——
o
Ta=100 C
hFE
45uA
40uA
DC CURRENT GAIN
COLLECTOR CURRENT
10
IC
12
35uA
30uA
6
25uA
20uA
4
o
Ta=25 C
100
15uA
2
10uA
IB=5uA
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
——
(V)
VCE=5V
1
10
COLLECTOR CURRENT
IC
VCEsat
1
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (V)
VBEsat
100
VCE
10
0.1
6
10
Ta=25℃
Ta=100℃
1
IC
100
(mA)
IC
——
Ta=100℃
0.1
Ta=25℃
β=20
β=20
0.1
0.01
1
10
100
COLLECTOR CURRENT
VBE
100
——
IC
1
10
100
COLLECTOR CURRENT
(mA)
IC
100
Cob/ Cib
——
IC
(mA)
VCB/ VEB
f=1MHz
IE=0/ IC=0
o
(pF)
10
Cib
10
C
Ta=100℃
Ta=25℃
CAPACITANCE
COLLCETOR CURRENT
IC
(mA)
Ta=25 C
1
Cob
1
VCE=5V
0.1
0.1
1
BASE-EMMITER VOLTAGE
PC
COLLECTOR POWER DISSIPATION
PC (mW)
200
——
0.1
0.1
10
VBE
1
REVERSE VOLTAGE
(V)
10
V
20
(V)
Ta
150
100
50
0
0
25
50
75
AMBIENT TEMPERATURE
www.cj-elec.com
100
Ta
125
150
(℃ )
2
D,May,2015
Typical Characteristics
DTA143T (PNP)
hFE
Static Characteristic
1000
-10
COMMON
EMITTER
Ta=25℃
-36uA
-28uA
-6
DC CURRENT GAIN
COLLECTOR CURRENT
hFE
-32uA
-24uA
-20uA
-4
-16uA
-12uA
o
Ta=25 C
100
-2
-8uA
VCE=-5V
IB=-4uA
-0
-0
-1
-2
-3
-4
-5
COLLECTOR-EMITTER VOLTAGE
——
VCE
10
-0.1
-6
(V)
-1
-10
COLLECTOR CURRENT
IC
VCEsat
-1
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (V)
VBEsat
-100
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
o
Ta=100 C
-8
IC
(mA)
-40uA
IC
——
-10
Ta=25℃
Ta=100℃
-1
IC
-100
(mA)
IC
——
Ta=100℃
-0.1
Ta=25℃
β=20
β=20
-0.1
-0.01
-1
-10
--100
COLLECTOR CURRENT
VBE
-100
——
IC
-1
-10
-100
COLLECTOR CURRENT
(mA)
IC
100
Cob/ Cib
——
IC
(mA)
VCB/ VEB
f=1MHz
IE=0/ IC=0
o
(pF)
-10
Ta=25℃
-1
VCE=-5V
-0.1
-0.1
-1
PC
COLLECTOR POWER DISSIPATION
PC (mW)
——
VBE
Cob
1
0.1
-0.1
-10
BASE-EMMITER VOLTAGE
200
Cib
10
C
Ta=100℃
CAPACITANCE
COLLCETOR CURRENT
IC
(mA)
Ta=25 C
-1
REVERSE VOLTAGE
(V)
-10
V
-20
(V)
Ta
150
100
50
0
0
25
50
75
AMBIENT TEMPERATURE
www.cj-elec.com
100
Ta
125
150
(℃ )
3
D,May,2015
SOT-563 Package Outline Dimensions
SOT-563 Suggested Pad Layout
www.cj-elec.com
4
D,May,2015
SOT-563 Tape and Reel
www.cj-elec.com
5
D,May,2015