1N4448 SILICON SWITCHING DIODE High-reliability discrete products and engineering services since 1977 FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Parameter Repetitive peak reverse voltage Continous reverse voltage (1) Continuous forward current Repeptive peak forward current Non-repetitive peak forward current Storage temperature Junction temperature Symbol VRRM VR IF IFRM IFSM Tstg TJ Conditions Square wave; TJ = 25°C prior to surge t = 1µs t = 1ms t = 1s Min - Max 100 100 200 450 Unit V V mA mA -65 - 4 1 0.5 +200 200 °C °C Min Max Unit 0.62 - 0.72 1 25 3 50 4 V µA µA µA pF - 4 ns - 2.5 V A Note 1: Device mounted on a FR4 printed-circuit board; lead length 10mm ELECTRICAL CHARACTERISTICS (@TJ = 25°C unless otherwise specified) Parameter Symbol Conditions Forward voltage VF IF = 5mA IF = 100mA Reverse current IR VR = 20V Reverse current IR VR = 20V, TJ = 100°C Reverse current IR VR = 20V, 25°C IR, TJ = 150°C Diode capacitance Cd f = 1MHz, VR = 0V Reverse recovery time trr When switched from IF = 10mA to IR = 60mA, RL = 100Ω measured at IR = 1mA Forward recovery voltage Vfr When switched from IF = 50mA, tr = 20ns THERMAL CHARACTERISTCS Parameter Thermal resistance junction to tie-point Thermal resistance from junction to ambient Symbol Rth(j-tp) Rth(j-a) Conditions Lead length 10mm Lead length 10mm (1) Value 240 Unit K/W 350 K/W Note 1: Device mounted on a printed-circuit board without metallization pad. Rev. 20160624 High-reliability discrete products and engineering services since 1977 1N4448 SILICON SWITCHING DIODE MECHANICAL CHARACTERISTICS Case: DO-35 Marking: Alpha-numeric Polarity: Cathode band Rev. 20160624