Diodes SMD Type High-speed diode BAS678 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High switching speed: max. 6ns 0.55 Small plastic SMD package +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Continuous reverse voltage: max. 80 V +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Repetitive peak forward current: max. 600 mA. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter repetitive peak reverse voltage Symbol Continuous reverse voltage VR IF Note 1 IFRM square wave; Tj =25 Non-repetitive peak forward current Min VRRM Continuous forward current Repetitive peak forward current Conditions IFSM Ptot Tstg Junction temperature Tj Tmab = 25 100 V 80 V 250 mA 600 mA 9 s A 3 s t = 10 ms Total power dissipation Unit prior to surge; t=1 t = 100 Storage temperature Max 1.7 250 ; Note 1 -65 mW +150 150 Note 1. Device mounted on an FR4 printed-circuit board. www.kexin.com.cn 1 Diodes SMD Type High-speed diode BAS678 Electrical Characteristics Ta = 25 Parameter Forward voltage Reverse current Symbol Conditions VF IF = 200 mA;d.c. ; Note 1 1.0 V VR = 10 V; 15 nA VR = 75 V; 100 nA IR VR = 75 V; Tj = 150 Diode capacitance Cd Reverse recovery time trr f = 1 MHz; VR = 0; when switched from IF = 400 mA to IR = 400 mA; RL = 100 Max Unit 50 A 2 pF 6 ns ;measured at IR = 40 mA; 2 V thermal resistance from junction to tie-point Rth j-tp 330 K/W thermal resistance from junction to ambient Rth j-a 500 K/W Forward recovery voltage Vf r when switched from IF = 10 mA;tr = 20 ns; Note 1. Tamb = 25 ; device has reached the thermal equilibrium when mounted on an FR4 printed-circuit board. Marking Marking 2 Min L52 www.kexin.com.cn