SUBMODULE SCREENING TEST PLAN For Modules H1, H2 and H3 TEST CONDITION MIL-STD-750 TEST METHOD Storage TA = +175°C for 24 hours 1032 Temp Cycle -65°C to +175°C, 20 cycles, 15 minutes each extreme 1051 Acceleration 20KG, Y1 axis, no hold time 2006 Electrical Reverse Current (IR) @ rated VWM Breakdown Voltage (V(BR)) @ IT 4016 4022 Pulse 20 pulses @ rated IPP, tp = 10 x 1000µs Electrical Reverse Current (IR) @ rated VWM 4016 Burn-In TA = +125°C @ rated VWM for 96 hours 1038 Electrical Reverse Current (IR) @ rated VWM, D-IR = 50% or 1µA, whichever is greater Breakdown Voltage (V(BR)) @ IT, D-V(BR) ±2% from initial reading 4016 -8 atmcc/sec 4022 Fine Leak 5 x 10 1071G/H Gross Leak TA = +125°C for 1 minute, no bubbles 1071C/D Group A Reverse Current (IR) @ rated VWM Breakdown Voltage (V(BR)) @ IT Clamping Voltage (VC) @ IPP, tp = 10 x 1000µs Forward Voltage (VF) @ IF, tp = 8.3ms 4016 4022 4011 Note: For bidirectional devices, test both polarities – split hours on Burn-in test and surge pulse to 50% each polarity. Attributes Data Supplied Module – H1, H2, H3 05231.R0 11/04 ProTek Devices 2929 S. Fair Lane ● Tempe, Arizona ● 85282 Tel: 602-431-8101 ● Fax: 602-431-2288 Email: [email protected] ● Web: www.protekdevices.com 1