MIL PROCESSING TEST PLAN FOR DLZ SERIES – H1 VERSIONS (Unidirectional) TEST CONDITION Internal Visual MIL-STD-750 TEST METHOD 2072 Storage TA = +150°C for 24 hours 1032 Temp Cycle 10 cycles, 15 minutes each extreme @ min/max rated temps 1051 Acceleration 20KG, Y1 axis, no hold time 2006 Electrical Reverse Current (IR) @ rated VWM Breakdown Voltage (V(BR)) @ IT 4016 4022 Pulse 20 pulses @ IPP = 10A, tp = 8 x 20µs Electrical Reverse Current (IR) @ rated VWM 4016 Burn-in(HTRB) TA = +125°C @ rated VWM for 160 hours 1038 Electrical Reverse Current (IR) @ rated VWM, D-IR = 100% or 20% of Group A limit, whichever is greater Breakdown Voltage (V(BR)) @ IT, D-V(BR) ±2% from initial reading 4016 -8 atmcc/sec 4022 Fine Leak 1 x 10 1071G/H Gross Leak TA = +125°C, no bubbles 1071C/D Reverse Current (IR) @ rated VWM Breakdown Voltage (V(BR)) @ IT Clamping Voltage (VC) @ IPP, tp = 8 x 20µs Capacitance @ 0V 4016 4022 Marking Group A Attributes Data Supplied DLZ – H1 Screening 05227.R0 11/04 ProTek Devices 2929 S. Fair Lane ● Tempe, Arizona ● 85282 Tel: 602-431-8101 ● Fax: 602-431-2288 Email: [email protected] ● Web: www.protekdevices.com 4001 1