SEMiX151GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX® 1s Trench IGBT Modules SEMiX151GB12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 20 V VCES ≤ 1200 V 450 A -20 ... 20 V 10 µs -40 ... 175 °C Tc = 25 °C 189 A Tc = 80 °C 141 A 150 A Tj = 150 °C Inverse diode IF Tj = 175 °C IFnom Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C IFRM IFRM = 3xIFnom 450 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 900 A -40 ... 175 °C Tj Module It(RMS) Tterminal = 80 °C Tstg Visol AC sinus 50Hz, t = 1 min 600 A -40 ... 125 °C 4000 V Characteristics Symbol IGBT VCE(sat) VCE0 Conditions IC = 150 A VGE = 15 V chiplevel chiplevel rCE VGE = 15 V chiplevel VGE(th) VGE=VCE, IC = 6 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres VCE = 25 V VGE = 0 V QG VGE = - 8 V...+ 15 V RGint Tj = 25 °C VCC = 600 V IC = 150 A VGE = ±15 V RG on = 1 RG off = 1 di/dton = 3900 A/µs di/dtoff = 2000 A/µs td(on) tr Eon td(off) tf Eoff Rth(j-c) min. typ. max. Unit Tj = 25 °C 1.8 2.05 V Tj = 150 °C 2.2 2.4 V Tj = 25 °C 0.8 0.9 V Tj = 150 °C 0.7 0.8 V Tj = 25 °C 6.7 7.7 m 10.0 10.7 m 5.8 6.5 V 2.0 mA Tj = 150 °C 5 Tj = 25 °C Tj = 150 °C mA f = 1 MHz 9.3 nF f = 1 MHz 0.58 nF f = 1 MHz 0.51 nF 850 nC Tj = 150 °C 5.00 204 ns Tj = 150 °C 42 ns Tj = 150 °C 16.6 mJ Tj = 150 °C 468 ns Tj = 150 °C 91 ns Tj = 150 °C 18.4 mJ per IGBT 0.19 K/W GB © by SEMIKRON Rev. 3 – 03.07.2013 1 SEMiX151GB12E4s Characteristics Symbol Conditions Inverse diode VF = VEC IF = 150 A VGE = 0 V chiplevel VF0 chiplevel rF SEMiX® 1s Trench IGBT Modules SEMiX151GB12E4s IRRM Qrr Err Rth(j-c) • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Tj = 25 °C Tj = 150 °C typ. max. Unit 2.1 2.46 V 2.1 2.4 V Tj = 25 °C 1.1 1.3 1.5 V Tj = 150 °C 0.7 0.9 1.1 V Tj = 25 °C 4.3 5.6 6.4 m 7.8 8.5 m Tj = 150 °C IF = 150 A Tj = 150 °C di/dtoff = 3400 A/µs T = 150 °C j VGE = -15 V T j = 150 °C VCC = 600 V per diode 6.7 115 A 23 µC 8.9 mJ 0.31 K/W Module LCE RCC'+EE' Features chiplevel min. res., terminal-chip Rth(c-s) per module Ms to heat sink (M5) 16 nH TC = 25 °C 0.7 m TC = 125 °C 1 m 0.075 to terminals (M6) Mt K/W 3 5 2.5 5 Nm Nm Nm w 145 g Temperature Sensor R100 Tc=100°C (R25=5 k) B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% 3550 ±2% K Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C GB 2 Rev. 3 – 03.07.2013 © by SEMIKRON SEMiX151GB12E4s Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 3 – 03.07.2013 3 SEMiX151GB12E4s Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 3 – 03.07.2013 © by SEMIKRON SEMiX151GB12E4s SEMiX 1s spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 3 – 03.07.2013 5