SEMiX453GD12E4c Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX® 33c Trench IGBT Modules SEMiX453GD12E4c VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 20 V VCES ≤ 1200 V 1350 A -20 ... 20 V 10 µs -40 ... 175 °C Tc = 25 °C 544 A Tc = 80 °C 407 A 450 A Tj = 150 °C Inverse diode IF Tj = 175 °C IFnom Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C IFRM IFRM = 3xIFnom 1350 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 2430 A -40 ... 175 °C Tj Module It(RMS) Tterminal = 80 °C Tstg Visol AC sinus 50Hz, t = 1 min 600 A -40 ... 125 °C 4000 V Characteristics Symbol IGBT VCE(sat) VCE0 Conditions IC = 450 A VGE = 15 V chiplevel chiplevel min. typ. max. Unit Tj = 25 °C 1.8 2.05 V Tj = 150 °C 2.2 2.4 V Tj = 25 °C 0.8 0.9 V Tj = 150 °C 0.7 0.8 V Tj = 25 °C 2.2 2.6 m 3.3 3.6 m 5.8 6.5 V 5 mA rCE VGE = 15 V chiplevel VGE(th) VGE=VCE, IC = 18 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres VCE = 25 V VGE = 0 V QG VGE = - 8 V...+ 15 V RGint Tj = 25 °C VCC = 600 V IC = 450 A VGE = ±15 V RG on = 2 RG off = 2 di/dton = 4400 A/µs di/dtoff = 3900 A/µs td(on) tr Eon td(off) tf Eoff Rth(j-c) Tj = 150 °C 5 Tj = 25 °C Tj = 150 °C mA f = 1 MHz 27.9 nF f = 1 MHz 1.74 nF f = 1 MHz 1.53 nF 2550 nC 1.67 Tj = 150 °C 253 ns Tj = 150 °C 85 ns Tj = 150 °C 52 mJ Tj = 150 °C 629 ns Tj = 150 °C 130 ns Tj = 150 °C 67.8 mJ per IGBT 0.065 K/W GD © by SEMIKRON Rev. 1 – 03.07.2013 1 SEMiX453GD12E4c Characteristics Symbol Conditions Inverse diode VF = VEC IF = 450 A VGE = 0 V chiplevel VF0 chiplevel rF SEMiX® 33c Trench IGBT Modules SEMiX453GD12E4c IRRM Qrr Err Rth(j-c) • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Tj = 25 °C Tj = 150 °C typ. max. Unit 2.1 2.46 V 2.1 2.4 V Tj = 25 °C 1.1 1.3 1.5 V Tj = 150 °C 0.7 0.9 1.1 V Tj = 25 °C 1.4 1.9 2.1 m 2.6 2.8 m Tj = 150 °C IF = 450 A Tj = 150 °C di/dtoff = 5200 A/µs T = 150 °C j VGE = -15 V T j = 150 °C VCC = 600 V per diode 2.2 350 A 67 µC 28 mJ 0.11 K/W Module LCE RCC'+EE' Features chiplevel min. res., terminal-chip Rth(c-s) per module Ms to heat sink (M5) 20 nH TC = 25 °C 0.7 m TC = 125 °C 1 m 0.014 to terminals (M6) Mt K/W 3 5 2.5 5 Nm Nm Nm w 900 g Temperature Sensor R100 Tc=100°C (R25=5 k) B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% 3550 ±2% K Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C GD 2 Rev. 1 – 03.07.2013 © by SEMIKRON SEMiX453GD12E4c Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 1 – 03.07.2013 3 SEMiX453GD12E4c Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 1 – 03.07.2013 © by SEMIKRON SEMiX453GD12E4c SEMiX 33c pinout This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 1 – 03.07.2013 5