TVS Diode Arrays (SPA™ Family of Products) Lightning Surge Protection - SPLV2.8-4 Series SPLV2.8-4 Series 2.8V 40A TVS Array RoHS Pb GREEN The SPLV2.8-4 was designed to protect low voltage, CMOS devices from ESD and lightning induced transients. There is a compensating diode in series with each low voltage TVS to present a low loading capacitance to the line being protected. These robust structures can safely absorb repetitive ESD strikes at ±30kV (contact discharge) per IEC61000-4-2 standard and each structure can safely dissipate up to 40A (IEC61000-4-5, tP=8/20μs) with very low clamping voltages. Features Pinout 4 3 2 1 t &4%*&$ ±30kV contact, ±30kV air t -PXMFBLBHFDVSSFOUPG 1μA (MAX) at 2.8V t &'5*&$" (5/50ns) t 40*$QJO+&%&$.4 012) configuration allows for simple flow-through layout t -JHIUOJOH*&$ 40A (8/20μs) t -PXDBQBDJUBODFPGQ' per line Applications 5 6 7 8 t "OBMPH*OQVUT t 8"/-"/&RVJQNFOU t #BTF4UBUJPOT t 4XJUDIJOH4ZTUFNT Functional Block Diagram Pin 1.3 t &UIFSOFU t %FTLUPQT4FSWFSTBOE Notebooks Pin 6.8 Application Example Ethernet PHY Tx+ TxRx+ Rx- RJ-45 Connector J1 Pin 2.4 Pin 5.7 SPLV2.8-4 Device is shown as transparent for actual footprint J8 Case GND ©2012 Littelfuse, Inc. Specifications are subject to change without notice. Please refer to www.littelfuse.com/SPA for current information. 143 Revision: March 20, 2012 SPLV2.8-4 Series SPLV2.8-4 Description TVS Diode Arrays (SPA™ Family of Products) Lightning Surge Protection - SPLV2.8-4 Series Electrical Characteristics (TOP = 25°C) Parameter Symbol Test Conditions VRWM IR≤1μA Reverse Breakdown Voltage VBR IT=2μA 3.0 V Snap Back Voltage VSB IT=50mA 2.8 V Reverse Leakage Current Reverse Standoff Voltage Clamping Voltage Min ILEAK VR=2.8V (Each Line) 1 VC IPP=5A, tP=8/20μs (Each Line) 1 VC IPP=24A, tP=8/20μs (Each Line) Clamping Voltage ESD Withstand Voltage1 Diode Capacitance 1 Max Units 2.8 V 1 μA 7.0 8.5 V 13.9 15.0 V IEC61000-4-2 (Contact) ±30 kV IEC61000-4-2 (Air) ±30 kV VESD Dynamic Resistance Typ RDYN (VC2 - VC1) / (IPP2 - IPP1) (Each Line) 0.4 CD VR=0V, f=1MHz (Each Line) 2.0 Ω 2.5 pF Note: 1Parameter is guaranteed by design and/or device characterization. Figure 1: Capacitance vs. Reverse Voltage Absolute Maximum Ratings Rating Units Peak Pulse Power (tP=8/20μs) 600 W Peak Pulse Current (tP=8/20μs) 40 A Operating Temperature -40 to 85 ºC Storage Temperature -60 to 150 ºC 4.0 3.5 Capacitance (pF) Parameter CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 DC Bias (V) Figure 2: Clamping Voltage vs. IPP Figure 3: Pulse Waveform 110% 14 100% 90% Percent of IPP Clamping Voltage-VC (V) 12 10 8 6 80% 70% 60% 50% 40% 30% 20% 4 10% 0% 0.0 2 0 0 5 10 15 20 5.0 10.0 15.0 20.0 25.0 30.0 Time (μs) 25 Peak Pulse Current-IPP (A) SPLV2.8-4 Series 144 Revision: March 20, 2012 ©2012 Littelfuse, Inc. Specifications are subject to change without notice. Please refer to www.littelfuse.com/SPA for current information. TVS Diode Arrays (SPA™ Family of Products) Lightning Surge Protection - SPLV2.8-4 Series Soldering Parameters Lead Plating Reflow Condition Matte Tin Lead Material Copper Alloy Lead Coplanarity 0.0004 inches (0.102mm) Pre Heat Pb – Free assembly - Temperature Min (Ts(min)) 150°C - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Substitute Material Silicon Average ramp up rate (Liquidus) Temp (TL) to peak Body Material Molded Epoxy TS(max) to TL - Ramp-up Rate Flammability UL 94 V-0 - Temperature (TL) (Liquidus) Reflow Notes : 1. All dimensions are in millimeters 2. Dimensions include solder plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form. 5. Package surface matte finish VDI 11-13. - Temperature (tL) 5°C/second max 5°C/second max 217°C 60 – 150 seconds Peak Temperature (TP) 260+0/-5 °C Time within 5°C of actual peak Temperature (tp) 20 – 40 seconds Ramp-down Rate 5°C/second max Time 25°C to peak Temperature (TP) 8 minutes Max. Do not exceed 260°C tP TP Critical Zone TL to TP Temperature Ramp-up TL TS(max) tL Ramp-do Ramp-down Preheat TS(min) tS 25 time to peak temperature Time Package Dimensions — Mechanical Drawings and Recommended Solder Pad Outline Package SOIC Pins 8 JEDEC MS-012 Millimetres Inches LF A 1.35 1.75 0.053 0.069 o A1 0.10 0.25 0.004 0.010 Min Recommended Soldering Pad Outline (Reference Only) Min Max A2 1.25 1.65 0.050 0.065 B 0.31 0.51 0.012 0.020 c 0.17 0.25 0.007 0.010 D 4.80 5.00 0.189 0.197 E 5.80 6.20 0.228 0.244 E1 3.80 4.00 0.150 0.157 e L ©2012 Littelfuse, Inc. Specifications are subject to change without notice. Please refer to www.littelfuse.com/SPA for current information. Max 145 Revision: March 20, 2012 1.27 BSC 0.40 0.050 BSC 1.27 0.016 0.050 SPLV2.8-4 Series SPLV2.8-4 Product Characteristics TVS Diode Arrays (SPA™ Family of Products) Lightning Surge Protection - SPLV2.8-4 Series Part Marking System Part Numbering System U 2.8 -4 SP LV2.8 -4 B T G Silicon Protection Array (SPATM) Family of TVS Diode Arrays Series U2.8-4 G= Green T= Tape & Reel Package Product Series No. of channels U = SPLV2.8 Voltage Level B = SOIC-8 No. of channels Ordering Information Part Number Package Marking Min. Order Qty. SPLV2.8-4BTG SOIC-8 U2.8-4 2500 Embossed Carrier Tape & Reel Specification — SOIC Package User Feeding Direction Symbol Pin 1 Location Millimetres Max Min Max E 1.65 1.85 0.065 0.073 F 5.4 5.6 0.213 0.22 P2 1.95 2.05 0.077 0.081 D 1.5 1.6 0.059 0.063 4.1 0.154 D1 P0 10P0 1.50 Min 3.9 0.059 Min 40.0 +/- 0.20 0.161 1.574 +/- 0.008 W 11.9 12.1 0.468 0.476 P 7.9 8.1 0.311 0.319 A0 6.3 6.5 0.248 0.256 B0 5.1 5.3 0.2 0.209 K0 2 2.2 0.079 0.087 t SPLV2.8-4 Series Inches Min 146 Revision: March 20, 2012 0.30 +/- 0.05 0.012 +/- 0.002 ©2012 Littelfuse, Inc. Specifications are subject to change without notice. Please refer to www.littelfuse.com/SPA for current information.