TVS Diode Arrays (SPA® Diodes) General Purpose ESD Protection - SP1006 Series SP1006 Series 25pF 30kV Unidirectional Discrete TVS RoHS Pb GREEN Description Zener diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes at ±30kV (contact discharge, IEC 61000-4-2) without performance degradation. Additionally, each diode can safely dissipate 5A of 8/20µs surge current (IEC61000-4-5) with very low clamping voltages. Features Pinout Pin 1 • ESD, IEC61000-4-2, ±30kV contact, ±30kV air • Low leakage current of 0.5µA (MAX) at 5V • EFT, IEC61000-4-4, 40A (5/50ns) • Space efficient 0201 footprint) • Lightning, IEC61000-4-5, 5A (8/20µs) Pin 2 Applications • Smart phones • Portable navigation devices • PDAs • Portable medical devices • Mobile phones Functional Block Diagram 1 • Digital cameras Application Example Keypads 2 I/O Controller P1 P2 Outside World Additional Information P3 IC P4 Case GND Datasheet Resources SP1006 (x4) Samples Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. © 2015 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/26/15 TVS Diode Arrays (SPA® Diodes) General Purpose ESD Protection - SP1006 Series Absolute Maximum Ratings Symbol Parameter Value Units 5 A Operating Temperature –40 to 125 °C Storage Temperature –55 to 150 °C IPP Peak Pulse Current (tp=8/20μs) TOP TSTOR CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Thermal Information Parameter Rating Units –55 to 150 °C Maximum Junction Temperature 150 °C Maximum Lead Temperature (Soldering 30s) 260 °C Storage Temperature Range Electrical Characteristics (TOP=25ºC) Parameter Symbol Reverse Standoff Voltage VRWM Test Conditions Min Typ Max Units 6.0 V Breakdown Voltage VBR IR=1mA (Pin 1 to 2) 7.8 V Forward Voltage Drop VF IR=1mA (Pin 2 to 1) 0.8 V Leakage Current ILEAK Clamp Voltage1 VC Dynamic Resistance RDYN ESD Withstand Voltage1 VESD Diode Capacitance1 VR=5V 0.1 Ipp=1A, tp=8/20µs (Pin 1 to 2) 8.3 Ipp=2A, tp=8/20µs (Pin 1 to 2) 9.2 V (VC2 - VC1) / (IPP2 - IPP1) 0.9 Ω IEC61000-4-2 (Contact Discharge) ±30 IEC61000-4-2 (Air Discharge) ±30 CD 0.5 μA V kV kV Reverse Bias=0V 25 pF Reverse Bias=2.5V 15 pF Note: Parameter is guaranteed by design and/or device characterization. 1 Capacitance vs. Reverse Bias Pulse Waveform 110% 30 100% 25 90% 80% Percent of IPP Capacitance (pF) 20 15 10 70% 60% 50% 40% 30% 5 20% 10% 0 0.0 0.5 1.0 1.5 2.0 2.5 Bias Voltage (V) © 2015 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/26/15 3.0 3.5 4.0 4.5 5.0 0% 0.0 5.0 10.0 15.0 Time (μs) 20.0 25.0 30.0 TVS Diode Arrays (SPA® Diodes) General Purpose ESD Protection - SP1006 Series Clamping Voltage vs. IPP 16.0 Clamp Voltage (VC) 14.0 12.0 10.0 8.0 6.0 4.0 2.0 0.0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Peak Pulse Current-IPP (A) Soldering Parameters Pre Heat Pb – Free assembly - Temperature Min (Ts(min)) 150°C - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Average ramp up rate (Liquidus) Temp (TL) to peak 3°C/second max TS(max) to TL - Ramp-up Rate 3°C/second max Reflow - Temperature (TL) (Liquidus) - Temperature (tL) 217°C 60 – 150 seconds Peak Temperature (TP) 260+0/-5 °C Time within 5°C of actual peak Temperature (tp) 20 – 40 seconds Ramp-down Rate 6°C/second max Time 25°C to peak Temperature (TP) 8 minutes Max. tP TP Temperature Reflow Condition Critical Zone TL to TP Ramp-up TL TS(max) tL Ramp-do Ramp-down Preheat TS(min) 25 tS time to peak temperature Time Package Dimensions — μDFN-2 (0201) Package μDFN-2 (0201) JEDEC Symbol TOP VIEW BOTTOM VIEW SIDE VIEW MO-236 Millimeters Min Nom Max A 0.28 0.30 0.32 A1 0.00 0.02 0.05 A2 0.05 0.10 0.15 b 0.20 0.25 0.30 D 0.55 0.60 0.65 E 0.25 0.30 0.35 L1 0.14 0.19 0.24 L2 0.13 0.18 0.23 K1 0.165 REF © 2015 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/26/15 TVS Diode Arrays (SPA® Diodes) General Purpose ESD Protection - SP1006 Series Product Characteristics Part Numbering System SP 1006 – 01 U T G TVS Diode Arrays (SPA® Diodes) Series G= Green T= Tape & Reel Package Number of Channels U: μDFN-2 Part Marking System Lead Plating Pre-Plated Frame Lead Material Copper Alloy Lead Coplanarity 0.0004 inches (0.102mm) Substitute Material Silicon Body Material Molded Epoxy Flammability UL 94 V-0 Notes : 1. All dimensions are in millimeters 2. Dimensions include solder plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form. 5. Package surface matte finish VDI 11-13. Pin 2 Pin 1 Ordering Information Part Number Package Marking Min. Order Qty. SP1006-01UTG μDFN-2 II 10000 Embossed Carrier Tape & Reel Specification — μDFN-2 P0 P1 P2 D0 Symbol E F W 0.20 ± 0.05 T 0º MAX A0 K0 © 2015 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/26/15 0º MAX B0 Millimetres Inches Min Max Min Max A0 0.36 0.42 0.014 0.017 B0 0.66 0.72 0.026 0.028 D0 1.40 1.60 0.055 0.063 E 1.65 1.85 0.065 0.073 F 3.45 3.55 0.136 0.140 K0 0.39 0.45 0.015 0.018 P0 1.95 2.05 0.077 0.081 P1 1.95 2.05 0.077 0.081 P2 3.90 4.10 0.154 0.161 T 0.18 0.22 0.007 0.009 W 7.90 8.30 0.311 0.327