Datasheet

TVS Diode Arrays (SPA® Diodes)
General Purpose ESD Protection-SP1012 Series
SP1012 Series 6.5pF, 15kV Bidirectional TVS Array
RoHS
Pb GREEN
Description
The miniature 5 channel bidirectional TVS array provides
protection for data lines that may experience destructive
electrostatic discharges (ESD). These robust diodes can
safely absorb repetitive ESD strikes at the maximum
level specified in the IEC61000-4-2 international standard
without performance degradation. The bidirectional
configuration provides symmetrical ESD protection for data
lines when AC signals are present.
Features
Functional Block Diagram
1
2
3
• ESD, IEC61000-4-2,
±15kV contact, ±30kV air
• Highest density TVS array
available today
• EFT, IEC61000-4-4,40A
(5/50ns)
• 5 channels of protection
in a 0.94x0.61mm
footprint (i.e. a discrete
0402)
• L
ightning protection,
IEC61000-4-5, 3.0A
(tp=8/20µs)
4
5*
6
*Any pin can be used as GND.
Pinout
Applications
• Smart Phones
• Mobile Phones
Die edge
1
2
3
4
5
6
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
© 2015 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/23/15
• Wearable Technology
TVS Diode Arrays (SPA® Diodes)
General Purpose ESD Protection-SP1012 Series
Absolute Maximum Ratings
Symbol
Parameter
Value
Units
3.0
A
Operating Temperature
-40 to 125
°C
Storage Temperature
-55 to 150
°C
IPP
Peak Current (tp=8/20μs)
TOP
TSTOR
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Thermal Information
Parameter
Storage Temperature Range
Rating
Units
-55 to 150
°C
Maximum Junction Temperature
150
°C
Maximum Lead Temperature (Soldering 20-40s)
260
°C
Electrical Characteristics (TOP=25ºC)
Parameter
Symbol
Reverse Standoff Voltage
VRWM
Reverse Breakdown
Voltage
Test Conditions
VBD
IR=1mA
Leakage Current
IR
VR=5V
Clamp Voltage1
VC
Dynamic Resistance
RDYN
2
ESD Withstand Voltage1
VESD
Diode Capacitance1
CD
Min
Typ
Max
Units
5.0
V
6.0
V
1.0
μA
IPP=1A, tp=8/20µs, Fwd
10.2
V
IPP=3A, tp=8/20µs, Fwd
12.3
V
TLP, tp=100ns, I/O to GND
0.48
Ω
IEC61000-4-2 (Contact Discharge)
±15
kV
IEC61000-4-2 (Air Discharge)
±30
kV
Reverse Bias=0V (I/O to GND)
6.5
pF
Note:
1
Parameter is guaranteed by design and/or device characterization.
2
Transmission Line Pulse (TLP) with 100ns width and 200ps rise time.
Clamping Voltage vs. IPP
Capacitance vs. Reverse Bias
14
7.0
6.0
10
Capacitance (pF)
Clamp Voltage (VC)
12
8
6
5.0
4.0
3.0
4
2.0
2
1.0
0
0.0
1.0
1.5
2.0
Peak Pulse Current-IPP (A)
2.5
3.0
0.0
1.0
2.0
3.0
4.0
5.0
Voltage (V)
© 2015 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/23/15
TVS Diode Arrays (SPA® Diodes)
General Purpose ESD Protection-SP1012 Series
Pulse Waveform
20
110%
18
100%
16
90%
14
80%
12
Percent of IPP
TLP Current (A)
Transmission Line Pulsing(TLP) Plot
10
8
6
50%
40%
30%
4
20%
2
0
70%
60%
10%
0
4
8
12
16
20
24
28
0%
32
0.0
5.0
10.0
TLP Voltage (V)
15.0
20.0
25.0
30.0
Time (μs)
Soldering Parameters
Pre Heat
Pb – Free assembly
- Temperature Min (Ts(min))
150°C
- Temperature Max (Ts(max))
200°C
- Time (min to max) (ts)
60 – 180 secs
Average ramp up rate (Liquidus) Temp (TL)
to peak
3°C/second max
TS(max) to TL - Ramp-up Rate
3°C/second max
Reflow
- Temperature (TL) (Liquidus)
217°C
- Temperature (tL)
60 – 150 seconds
260+0/-5 °C
Time within 5°C of actual peak
Temperature (tp)
20 – 40 seconds
Ramp-down Rate
6°C/second max
Time 25°C to peak Temperature (TP)
8 minutes Max.
Do not exceed
260°C
tL
Ramp-do
Ramp-down
Preheat
TS(min)
tS
time to peak temperature
Part Marking System
Top
2
Part Numbering System
SP 1012 – 05 W T G
TVS Diode Arrays
(SPA® Diodes)
G= Green
Pin 1
T= Tape & Reel
Flip vertically (downward) 180º
Series
Bottom
Package
W: Flipchip
Number of
Channels
Pin 1
Ordering Information
Part Number
Package
Marking
Min. Order
Qty.
SP1012-05WTG
0.94x0.61mm
Flip Chip
2
5000
© 2015 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/23/15
Critical Zone
TL to TP
Ramp-up
TL
TS(max)
25
Peak Temperature (TP)
tP
TP
Temperature
Reflow Condition
Time
TVS Diode Arrays (SPA® Diodes)
General Purpose ESD Protection-SP1012 Series
Package Dimensions
0.94x0.61mm Flip Chip
Symbol
Millimeters
Inches
Min
Typ
Max
Min
Typ
Max
A
0.280
0.310
0.340
0.0110
0.0122
0.0134
A1
0.005
0.010
0.015
0.0002
0.0004
0.0006
b
0.175
0.180
0.185
0.0069
0.0071
0.0073
D
0.585
0.610
0.635
0.0230
0.0240
0.0250
E
0.915
0.940
0.965
0.0360
0.0370
0.0380
0.330
e
SIZE IN MM
0.0130
SIZE IN MM
Embossed Carrier Tape & Reel Specification — Flipchip
P1
P2
D
P0
E
F
W
D1
T
A0
Symbol
Millimeters
A0
0.68+/-0.03
B0
1.12+/-0.03
D
ø 1.50 + 0.10
D1
ø 0.40 +/- 0.05
E
1.75+/-0.10
F
3.50+/-0.05
K0
0.36+/-0.03
P0
2.00+/-0.05
P1
2.00+/-0.05
P2
4.00+/-0.10
W
8.00 + 0.30 -0.10
T
0.20+/-0.02
K0 B0
Pin 1 Location
User Feeding Direction
© 2015 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/23/15