TVS Diode Arrays (SPA® Diodes) General Purpose ESD Protection-SP1012 Series SP1012 Series 6.5pF, 15kV Bidirectional TVS Array RoHS Pb GREEN Description The miniature 5 channel bidirectional TVS array provides protection for data lines that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes at the maximum level specified in the IEC61000-4-2 international standard without performance degradation. The bidirectional configuration provides symmetrical ESD protection for data lines when AC signals are present. Features Functional Block Diagram 1 2 3 • ESD, IEC61000-4-2, ±15kV contact, ±30kV air • Highest density TVS array available today • EFT, IEC61000-4-4,40A (5/50ns) • 5 channels of protection in a 0.94x0.61mm footprint (i.e. a discrete 0402) • L ightning protection, IEC61000-4-5, 3.0A (tp=8/20µs) 4 5* 6 *Any pin can be used as GND. Pinout Applications • Smart Phones • Mobile Phones Die edge 1 2 3 4 5 6 Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. © 2015 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/23/15 • Wearable Technology TVS Diode Arrays (SPA® Diodes) General Purpose ESD Protection-SP1012 Series Absolute Maximum Ratings Symbol Parameter Value Units 3.0 A Operating Temperature -40 to 125 °C Storage Temperature -55 to 150 °C IPP Peak Current (tp=8/20μs) TOP TSTOR CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Thermal Information Parameter Storage Temperature Range Rating Units -55 to 150 °C Maximum Junction Temperature 150 °C Maximum Lead Temperature (Soldering 20-40s) 260 °C Electrical Characteristics (TOP=25ºC) Parameter Symbol Reverse Standoff Voltage VRWM Reverse Breakdown Voltage Test Conditions VBD IR=1mA Leakage Current IR VR=5V Clamp Voltage1 VC Dynamic Resistance RDYN 2 ESD Withstand Voltage1 VESD Diode Capacitance1 CD Min Typ Max Units 5.0 V 6.0 V 1.0 μA IPP=1A, tp=8/20µs, Fwd 10.2 V IPP=3A, tp=8/20µs, Fwd 12.3 V TLP, tp=100ns, I/O to GND 0.48 Ω IEC61000-4-2 (Contact Discharge) ±15 kV IEC61000-4-2 (Air Discharge) ±30 kV Reverse Bias=0V (I/O to GND) 6.5 pF Note: 1 Parameter is guaranteed by design and/or device characterization. 2 Transmission Line Pulse (TLP) with 100ns width and 200ps rise time. Clamping Voltage vs. IPP Capacitance vs. Reverse Bias 14 7.0 6.0 10 Capacitance (pF) Clamp Voltage (VC) 12 8 6 5.0 4.0 3.0 4 2.0 2 1.0 0 0.0 1.0 1.5 2.0 Peak Pulse Current-IPP (A) 2.5 3.0 0.0 1.0 2.0 3.0 4.0 5.0 Voltage (V) © 2015 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/23/15 TVS Diode Arrays (SPA® Diodes) General Purpose ESD Protection-SP1012 Series Pulse Waveform 20 110% 18 100% 16 90% 14 80% 12 Percent of IPP TLP Current (A) Transmission Line Pulsing(TLP) Plot 10 8 6 50% 40% 30% 4 20% 2 0 70% 60% 10% 0 4 8 12 16 20 24 28 0% 32 0.0 5.0 10.0 TLP Voltage (V) 15.0 20.0 25.0 30.0 Time (μs) Soldering Parameters Pre Heat Pb – Free assembly - Temperature Min (Ts(min)) 150°C - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Average ramp up rate (Liquidus) Temp (TL) to peak 3°C/second max TS(max) to TL - Ramp-up Rate 3°C/second max Reflow - Temperature (TL) (Liquidus) 217°C - Temperature (tL) 60 – 150 seconds 260+0/-5 °C Time within 5°C of actual peak Temperature (tp) 20 – 40 seconds Ramp-down Rate 6°C/second max Time 25°C to peak Temperature (TP) 8 minutes Max. Do not exceed 260°C tL Ramp-do Ramp-down Preheat TS(min) tS time to peak temperature Part Marking System Top 2 Part Numbering System SP 1012 – 05 W T G TVS Diode Arrays (SPA® Diodes) G= Green Pin 1 T= Tape & Reel Flip vertically (downward) 180º Series Bottom Package W: Flipchip Number of Channels Pin 1 Ordering Information Part Number Package Marking Min. Order Qty. SP1012-05WTG 0.94x0.61mm Flip Chip 2 5000 © 2015 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/23/15 Critical Zone TL to TP Ramp-up TL TS(max) 25 Peak Temperature (TP) tP TP Temperature Reflow Condition Time TVS Diode Arrays (SPA® Diodes) General Purpose ESD Protection-SP1012 Series Package Dimensions 0.94x0.61mm Flip Chip Symbol Millimeters Inches Min Typ Max Min Typ Max A 0.280 0.310 0.340 0.0110 0.0122 0.0134 A1 0.005 0.010 0.015 0.0002 0.0004 0.0006 b 0.175 0.180 0.185 0.0069 0.0071 0.0073 D 0.585 0.610 0.635 0.0230 0.0240 0.0250 E 0.915 0.940 0.965 0.0360 0.0370 0.0380 0.330 e SIZE IN MM 0.0130 SIZE IN MM Embossed Carrier Tape & Reel Specification — Flipchip P1 P2 D P0 E F W D1 T A0 Symbol Millimeters A0 0.68+/-0.03 B0 1.12+/-0.03 D ø 1.50 + 0.10 D1 ø 0.40 +/- 0.05 E 1.75+/-0.10 F 3.50+/-0.05 K0 0.36+/-0.03 P0 2.00+/-0.05 P1 2.00+/-0.05 P2 4.00+/-0.10 W 8.00 + 0.30 -0.10 T 0.20+/-0.02 K0 B0 Pin 1 Location User Feeding Direction © 2015 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/23/15