TVS Diode Arrays (SPA® Diodes) Low Capacitance ESD Protection - SP7538P Series SP7538P Series 0.5pF 12KV Diode Array RoHS Pb GREEN Description The SP7538P integrates 8 channels of ultra low capacitance rail-to-rail diodes and an additional zener diode to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD). This robust device can safely absorb repetitive ESD strikes above the maximum level specified in the IEC61000-4-2 international standard (±8kV contact discharge) without performance degradation. The extremely low loading capacitance also makes it ideal for protecting high speed signal pins such as V-By-One, HDMI, USB3.0, USB2.0, and IEEE 1394. Pinout Features 1 2 9 3 8 4 5 7 6 Functional Block Diagram Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. Revision: 03/17/16 • Low capacitance of 0.5pF • EFT, IEC61000-4-4, 40A (tP=5/50ns) • Low leakage current of 1.5μA (MAX) at 5V • Lightning, IEC610004-5 2nd edition, 4A (tP=8/20μs) • Halogen free, Lead free and RoHS compliant (TYP) per I/O Applications ©2016 Littelfuse, Inc. Specifications are subject to change without notice. • ESD, IEC61000-4-2, ±12kV contact, ±25kV air • V-By-One • Flat Panel Displays • Embedded DisplayPort • LCD/LED TVs • USB 2.0/3.0 Ports • Smartphones • HDMI • Mobile Computing TVS Diode Arrays (SPA® Diodes) Low Capacitance ESD Protection - SP7538P Series Absolute Maximum Ratings Symbol Parameter IPP Peak Current (tp=8/20μs) TOP TSTOR Value Units 4.0 A Operating Temperature -40 to 150 °C Storage Temperature -55 to 150 °C CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (TOP=25ºC) Symbol Test Conditions Reverse Standoff Voltage Parameter VRWM IR ≤ 1µA 5.0 V Reverse Leakage Current ILEAK VR=5V, Any I/O to GND 1.5 µA Clamp Voltage1 VC Dynamic Resistance RDYN 2 ESD Withstand Voltage1 Min Typ Units IPP=1A, tp=8/20µs, Fwd 6.6 V IPP=2A, tp=8/20µs, Fwd 7.0 V TLP, tP=100ns, I/O to GND VESD Max 0.3 IEC61000-4-2 (Contact) ±12 IEC61000-4-2 (Air) ±25 Ω kV kV Diode Capacitance1 CI/O-GND Reverse Bias=0V, f=1 MHz 0.5 pF Diode Capacitance1 CI/O-/O Reverse Bias=0V, f=1 MHz 0.3 pF Note: Parameter is guaranteed by design and/or device characterization. 1 2 Transmission Line Pulse (TLP) with 100ns width and 2ns rise time. 8/20μS Pulse Waveform Capacitance vs. Reverse Bias 110% 1 100% 0.9 90% Capacitance (pF) Percent of IPP 80% 70% 60% 50% 40% 30% 20% 0.8 0.7 0.6 0.5 0.4 0.3 0.2 10% 0.1 0% 0.0 5.0 10.0 15.0 20.0 25.0 30.0 Time (μs) Clamping Voltage vs IPP 0 8.0 1.5 2 2.5 3 3.5 Bias Voltage (V) 4 15 TLP Current (A) Clamp Voltage (VC) 1 20 6.0 4.0 10 5 2.0 1.0 2.0 3.0 Peak Pulse Current-IPP (A) ©2016 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 03/17/16 0.5 Transmission Line Pulsing(TLP) Plot 10.0 0.0 0 4.0 0 0 3 6 9 TLP Voltage (V) 12 15 4.5 5 TVS Diode Arrays (SPA® Diodes) Low Capacitance ESD Protection - SP7538P Series Soldering Parameters Pre Heat Pb – Free assembly - Temperature Min (Ts(min)) 150°C - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Average ramp up rate (Liquidus) Temp (TL) to peak 3°C/second max TS(max) to TL - Ramp-up Rate 3°C/second max Reflow - Temperature (TL) (Liquidus) 217°C - Temperature (tL) 60 – 150 seconds 260+0/-5 °C Time within 5°C of actual peak Temperature (tp) 20 – 40 seconds Ramp-down Rate 6°C/second max Time 25°C to peak Temperature (TP) 8 minutes Max. Do not exceed 260°C tL Ramp-do Ramp-down Preheat TS(min) tS time to peak temperature Time Product Characteristics Part Numbering System SP 7538P U T G TVS Diode Arrays (SPA® Diodes) G= Green T= Tape & Reel Series Critical Zone TL to TP Ramp-up TL TS(max) 25 Peak Temperature (TP) tP TP Temperature Reflow Condition Package U=μDFN-9 (3.8x1.0mm) Lead Plating Matte Tin Lead Material Copper Alloy Lead Coplanarity 0.004 inches(0.102mm) Substrate material Silicon Body Material Molded Epoxy Flammability UL 94 V-0 Notes : 1. All dimensions are in millimeters 2. Dimensions include solder plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form. 5. Package surface matte finish VDI 11-13. Ordering Information Part Marking System Part Number Package Marking Min. Order Qty. SP7538PUTG µDFN-9 SP7538x 3000 ©2016 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 03/17/16 SP7538 x Product Series Assembly Site TVS Diode Arrays (SPA® Diodes) Low Capacitance ESD Protection - SP7538P Series Package Dimensions µDFN-9 (3.8x1.0mm) JEDEC MO-229 Symbol Millimeters Inches Min Nom Max Min Nom Max 0.45 0.50 0.55 0.018 0.020 0.022 A1 - 0.02 0.05 - 0.001 0.002 b 0.15 0.20 0.25 0.006 0.008 0.010 c 0.10 0.15 0.20 0.004 0.006 0.008 D 3.70 3.80 3.90 0.146 0.150 0.154 A 0.80 BSC e 0.031 BSC 0.90 BSC e1 0.035 BSC E 0.90 1.00 1.10 0.035 0.039 0.043 L 0.20 0.30 0.40 0.008 0.012 0.016 Embossed Carrier Tape & Reel Specification 5° Max ©2016 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 03/17/16 Symbol Millimeters A0 1.35 +/- 0.10 B0 4.00 +/- 0.05 D Ø 1.50 + 0.1/ -0 D1 Ø 1.00 +/-0.05 E 1.75 +/- 0.10 F 5.50 +/- 0.05 K0 0.72 +/- 0.05 P 4.00 +/- 0.10 P0 4.00 +/- 0.10 P2 2.00 +/- 0.05 T 0.25 +/- 0.02 W 12.00 + 0.30 /- 0.10