MA4E2054L-1261 Low Barrier Schottky Chip M/A-COM Products Rev. V8 Features • Low IR (<100nA @ 1V, <500nA @ 3V) • Designed for High Volume, Low Cost Detector and Mixer Applications • Low Noise Figure: 5.7 dB (SSB) at X-Band • High Detector Sensitivity: -55 dBm TSS • Low Capacitance: 0.14 pF (typ.) • Low 1/F Noise • RoHS* Compliant Single Junction Chip Outline MA4E2054 Typ. 0.014” 0.36 Description and Applications The MA4E2054L-1261 diode is a low barrier, n-type, silicon Schottky device. It is useful as a high performance mixer or detector diode at frequencies from VHF through X-band. These chips can be used in automatic assembly processes due to their 0.004” gold bond pads and sturdy construction. Typ. 0.014” 0.36 Maximum Ratings Parameter 2. Values Operating Temperature TOP °C -65 to +150 Storage Temperature TSTG °C -65 to +150 Incident RF Power (CW) PT mW 751 Reverse Voltage @ 25 °C VR V 3 Forward Current IF - mA - 20 Class 0 ESD Rating 1. Symbol Unit 2 At 25 °C case temperature, Derate linearly to zero watts at 150 °C case temperature. Human Body Model Typ. 0.004” 0.10 Typical RF Performance @ +25 °C Electrical Specifications @ +25 °C Parameter Condition Symbol Specification Parameter Conditions Typical Mixer Noise Figure3 f = 9.375 GHz LO = 0 dBm 5.7 dB (SSB) Breakdown Voltage IR = 10 μA VB 3.0 V min. IF Impedance IF = 30 MHz 200 ohms Reverse Leakage Current VR = 1 V IR 100 nA max. VR = 3 V IR 500 nA max. IF = 20 uA BW = 2 MHz Video NF = 1.5 dB -55 dBm Reverse Leakage Current Tangential Signal Sensitivity4 Total Capacitance VR = 0 V f = 1 MHz CT 0.16 pF max. Detector Output, Voltage at -30 dBm4 RL = 100K Ohms IF = 20 μA 20 mV Dynamic Resistance 2 IF = 10 mA RD 17 Ohms max. RL = 1M Ohm Zero Bias 20 mV Forward Voltage IF = 1 mA VF 250 mV min. 350 mV min. Detector Output Voltage at -30 dBm4 2. RD = RS + RJ where RJ = 1 inches mm 26 IF (in mA) 3. Fixture tuned to 9.375 GHz. 4. Fixture tuned to 2.5 GHz. See figures on page 3 for untuned fixture performance. * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 development. Performance is based on target specifications, simulated results, and/or prototype • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4E2054L-1261 Low Barrier Schottky Chip M/A-COM Products Rev. V8 Circuit Model (Chip) Spice Model Parameters 0.06 pF RS IS = 3 x 10-8 A M = 0.50 RS = 11Ω EG = 0.69 eV N = 1.05 BV = 5.0 V TT = 0 S IBV = 1 x 10 -5 A CT = 0.13 x 10 -12 pF RJ VJ = 0.40 V Recommended Assembly: 11Ω 1. One mil diameter gold wire 2. Ball bond 3. Conductive silver epoxy for die mounting 0.04 pF Typical Performance Curves @ +25°C Detector Output Voltage vs Input Power and Load Resistance. Diode Forward Biased at 20μA. Untuned Fixture at 9.375 GHz Forward Current vs. Forward Voltage and Temperature 10 10000 1000 1 VOUT (mV) IF (mA) 100 +125 o C 0.1 10 - - - - - - 10k ohms 1 ________ 25 o C __ __ __ -50 o C 0.1 0.01 0.01 0 50 100 150 200 250 300 VF (mV) 350 400 450 -50 500 -40 -30 -20 -10 0 20 Detector Output Voltage vs Input Power and Load Resistance. Diode at Zero Bias. Untuned Fixture at 9.375 GHz 10000 8 1000 7 100 VOUT (mV) 9 6 5 10 - - - - - - 1M ohm ________ 1 __ __ __ 4 3 0.01 10 INPUT PO W ER (dBm) Tuned Fixture Noise Figure vs. Lo Power at 9.375 GHz NOISE FIGURE (dB) 1M ohm 5k ohms 0.1 __ . . __ . . 100k ohms 10k ohms 5k ohms 0.01 0.1 1 LO PO W ER (mW) 10 -40 -30 -20 -10 INPUT PO W ER (dBm) 0 10 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 development. Performance is based on target specifications, simulated results, and/or prototype • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make volume is not guaranteed. changes to the product(s) or information contained herein without notice.