RTQ030P02 Transistor DC-DC Converter (−20V, −3.0A) RTQ030P02 zExternal dimensions (Units : mm) zFeatures 1) Low On-resistance.(110mΩ at 2.5V) 2) High Power Package. 3) High speed switching. 4) Low voltage drive.(2.5V) TSMT6 2.8 0.85 2.9 (4) (5) (6) 0.16 0.4 (3) (2) (1) 1.6 Each lead has same dimensions Abbreviatedsymbol : TS zApplications DC-DC converter zEquivalent circuit zStructure Silicon P-channel MOSFET (6) (5) ∗2 zPackaging specifications Package Type Code Basic ordering unit (pieces) (4) Taping ∗1 TR 3000 RTQ030P02 (1) (2) (3) (1)DRAIN (2)DRAIN (3)GATE (4)SOURCE (5)DRAIN (6)DRAIN ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE 1/4 RTQ030P02 Transistor zAbsolute maximum ratings (Ta=25°C) Symbol Limits Unit Drain−source voltage VDSS −20 V Gate−source voltage VGSS ±12 V Parameter Drain current Source current (Body diode) Continuous ID ±3 A Pulsed IDP ±12 A Continuous IS −1 A Pulsed ISP −4 A PD 1.25 W ∗2 Total power dissipation Channel temperature Tch 150 °C Range of Storage temperature Tstg −55~+150 °C ∗1 ∗1 <1% <10µs, Duty cycle = ∗1 Pw = ∗2 Mounted on a ceramic board zElectrical characteristics (Ta=25°C) Parameter Gate-source leakage Symbol Min. Typ. Max. Unit IGSS − − ±10 µA VGS=±12V, VDS=0V −20 − − V ID=−1mA,, VGS=0V IDSS − − −1 µA VDS=−20V, VGS=0V VGS(th) −0.7 − −2.0 V VDS=−10V, ID=−1mA − 60 80 mΩ ID=−3A, VGS=−4.5V − 65 90 mΩ ID=−3A, VGS=−4V − 110 150 mΩ ID=−1.5A, VGS=−2.5V VDS=−10V, ID=−1.5A Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance ∗ RDS(on) ∗ Foward transfer admittance Yfs 2.0 − − S Input capacitance Ciss − 800 − pF Output capacitance Coss − 150 − pF Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Conditions td(on) tr td(off) tf − 100 − pF ∗ − 15 − ns ∗ − 27 − ns ∗ − 50 − ns ∗ − 20 − ns Total gate charge Qg − 9.0 − nC Gate-source charge Qgs − 1.6 − nC Gate-drain charge Qgd − 4.6 − nC −1.2 V VDS=−10V,VGS=0V f=1MHz ID=−1.5A VDD −15V VGS=−4.5V RL=10Ω RGS=10Ω VDD −15V VGS=−4.5V ID=−3A ∗PULSED Body diode characteristics (source-drain characteristics) Forward voltage VSD − − IS=−1A, VGS=0V 2/4 RTQ030P02 Transistor Static Drain−Source On−State Resistance RDS(on)[mΩ] Ta=125 C 75 C 25 C −25 C 0.1 0.01 0.001 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VGS=−4V −4.5V −10V 100 10 0.1 4.0 Static Drain−Source On−State Resistance RDS(on)[mΩ] Static Drain−Source On−State Resistance RDS(on)[mΩ] C C C C 100 1 100 Ta=125 C 75 C 25 C −25 C 1 10 Ciss Coss 100 0.01 0 Crss 0.5 1.0 2.0 1.5 Source−Drain Voltage : −VSD[V] Fig.6 Reverse Drain Current vs. Source-Drain Voltage 8 1000 Ta=25 C VDD=−15V VGS=−4.5V RG=10Ω pulsed tf 100 td(off) td(on) 10 Ta=125 C 75 C 25 C −25 C 0.1 Fig.5 Static Drain−Source On−State Resistance vs.Drain−Current Switching Time : t [ns] 1000 VGS=0V pulsed 1 Drain Current : −ID[A] Fig.4 Static Drain−Source On−State Resistance vs.Drain−Current Capacitance : C [pF] Fig.3 Static Drain−Source On−State Resistance vs.Drain Current 10 Drain Current : −ID[A] Ta=25 C f=1MHz VGS=0V 10 VGS=−2.5V pulsed 10 0.1 10 10000 1 Drain Current : −ID[A] 1000 VGS=−4V pulsed 10 0.1 C C C C 100 Fig.2 Static Drain−Source On−State Resistance vs.Drain Current Fig.1 Typical Transfer Characteristics Ta=125 75 25 −25 Ta=125 75 25 −25 10 0.1 10 1 VGS=−4.5V pulsed Drain Current : −ID[A] Gate−Source Voltage : −VGS[V] 1000 1000 Ta=25 C pulsed Reverse Drain Current : −IDR[A] 1 Drain Current : −ID (A) 1000 VDS=−10V pulsed tr Ta=25 C VDD=−15V ID=−3.0V RG=10Ω pulsed 7 Gate-Source Voltage: -VGS [V] 10 Static Drain−Source On−State Resistance RDS(on)[mΩ] zElectrical characteristic curves 6 5 4 3 2 1 10 0.01 0.1 1 10 100 1 0.01 0.1 1 Drain−Source Voltage : −VDS[V] Drain Current : −ID[A] Fig.7 Typical Capactitance vs.Drain−Source Voltage Fig.8 Switching Characteristics 10 0 0 2 4 6 8 10 12 Total Gate Charge : Qg[nC] Fig.9 Dynamic Input Characteristics 3/4 RTQ030P02 Transistor zMeasurement circuits Pulse Width VGS 10% 50% 50% 90% 10% 10% VGS ID VDS RG 90% 90% VDS RL D.U.T. VDD td(on) tr tf td(off) ton toff Fig.11 Switching Waveforms Fig.10 Switching Time Measurement Circuit VG Qg VGS VGS ID VDS Qgs IG(Const) RG D.U.T. Qgd RL VDD Charge Fig.12 Gate Charge Measurement Circuit Fig.13 Gate Charge Waveforms 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0