SSPL2090 200V N-Channel MOSFET Main Product Characteristics VDSS 200V RDS(on) 80mΩ(typ.) ID 30A TO-220 Schematic Diagram Marking and Pin Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature Lead free product Description These N-Channel enhancement mode power field effect transistors are produced using proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. Absolute Max Rating Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V① 30 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V① 21 IDM Pulsed Drain Current② 120 Power Dissipation③ 166 W Linear Derating Factor 1.1 W/°C VDS Drain-Source Voltage 200 V VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy @ L=4.2mH 680 mJ IAS Avalanche Current @ L=4.2mH 18 A -55 to + 175 °C PD @TC = 25°C TJ TSTG www.goodark.com Operating Junction and Storage Temperature Range Page 1 of 7 A Rev.1.0 SSPL2090 200V N-Channel MOSFET Thermal Resistance Symbol Characteristics RθJC RθJA Typ. Max. Units Junction-to-case③ — 0.9 ℃/W Junction-to-ambient (t ≤ 10s) ④ — 56 ℃/W Junction-to-Ambient (PCB mounted, steady-state) ④ — 36 ℃/W Electrical Characteristics @TA=25℃ Symbol Parameter V(BR)DSS Drain-to-Source breakdown voltage RDS(on) Static Drain-to-Source on-resistance VGS(th) Gate threshold voltage IDSS Drain-to-Source leakage current IGSS Gate-to-Source forward leakage Qg unless otherwise specified Min. Typ. Max. Units 200 — — V — 80 90 — 183 206 2 — 4 — 2.29 — — — 1 — — 50 — — 100 — — -100 Total gate charge — 57 — Qgs Gate-to-Source charge — 15 — Qgd Gate-to-Drain("Miller") charge — 16 — td(on) Turn-on delay time — 16 — tr Rise time — 13.6 — td(off) Turn-Off delay time — 36.4 — tf Fall time — 3.6 — Ciss Input capacitance — 3335 — Coss Output capacitance — 250 — Crss Reverse transfer capacitance — 6.1 — mΩ Conditions VGS = 0V, ID = 250μA VGS=10V,ID = 30A TJ = 125℃ V VDS = VGS, ID = 250μA TJ = 125℃ μA VDS = 200V,VGS = 0V TJ = 125℃ nA VGS =20V VGS = -20V ID = 11A, nC VDS=160V, VGS = 10V VGS=10V, VDS=100V, ns RL=9Ω, RGEN=2.5Ω VGS = 0V pF VDS = 25V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Min. Typ. Max. Units — — 30 A — — 120 A Conditions MOSFET symbol showing the integral reverse p-n junction diode. VSD Diode Forward Voltage — 0.8 1.3 V IS=11A, VGS=0V trr Reverse Recovery Time — 138 — ns TJ = 25°C, IF =11A, di/dt = Qrr Reverse Recovery Charge — 838 — nC 100A/μs www.goodark.com Page 2 of 7 Rev.1.0 SSPL2090 200V N-Channel MOSFET Test Circuits and Waveforms Switch Waveforms: Notes: ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. www.goodark.com Page 3 of 7 Rev.1.0 SSPL2090 200V N-Channel MOSFET Typical Electrical and Thermal Characteristics Figure 2. Gate to source cut-off voltage Figure 1: Typical Output Characteristics Figure 3. Drain-to-Source Breakdown Voltage vs. Case Temperature www.goodark.com Figure 4: Normalized On-Resistance Vs. Case Temperature Page 4 of 7 Rev.1.0 SSPL2090 200V N-Channel MOSFET Typical Electrical and Thermal Characteristics Figure 5. Maximum Drain Current Vs. Case Figure 6.Typical Capacitance Vs. Drain-to-Source Temperature Voltage Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.goodark.com Page 5 of 7 Rev.1.0 SSPL2090 200V N-Channel MOSFET Mechanical Data TO-220 PACKAGE OUTLINE DIMENSION_GN E ФP A ϴ1 D D2 ФP1 ϴ ϴ2 D1 b1 b A1 ϴ4 L c e Symbol A A1 b b1 c D D1 D2 E E1 ФP ФP1 e L ϴ1 ϴ2 ϴ3 ϴ4 www.goodark.com Dimension In Millimeters Min Nom Max 1.300 2.200 2.400 2.600 1.270 1.270 1.370 1.470 0.500 15.600 28.700 9.150 9.900 10.000 10.100 10.160 3.600 1.500 2.54BSC 12.900 13.100 13.300 0 7 0 7 30 0 3 Page 6 of 7 E Dimension In Inches Nom Max 0.051 0.094 0.102 0.050 0.054 0.058 0.020 0.614 1.130 0.360 0.394 0.398 0.400 0.142 0.059 0.1BSC 0.508 0.516 0.524 0 7 0 7 Min 0.087 0.050 0.390 - 50 70 90 10 30 50 Rev.1.0 SSPL2090 200V N-Channel MOSFET Ordering and Marking Information Device Marking: SSPL2090 Package (Available) TO-220 Operating Temperature Range C : -55 to 175 ºC Devices per Unit Package Type Units/ Tube TO-220 Tubes/Inner Box 50 20 Reliability Test Program Test Item Conditions High Temperature Reverse Bias(HTRB) High Temperature Gate Bias(HTGB) www.goodark.com Units/Inner Inner Box Boxes/Carton Box 1000 6 Duration Sample Size Tj=125℃ to 175℃ @ 80% of Max VDSS/VCES/VR 168 hours 500 hours 1000 hours 3 lots x 77 devices Tj=150℃ or 175℃ @ 100% of Max VGSS 168 hours 500 hours 1000 hours 3 lots x 77 devices Page 7 of 7 Units/Carton Box 6000 Rev.1.0