SSF7N65F
650V N-Channel MOSFET
Main Product Characteristics
VDSS
650V
RDS(on)
1.26Ω (typ.)
ID
7A
Marking and Pin
TO220F
Schematic Diagram
Assignment
Features and Benefits
Advanced Process Technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
Lead free product
Description
These N-Channel enhancement mode power field effect transistors are produced using
proprietary MOSFET technology. This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
switch mode power supplies.
Absolute Max Rating
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
7 ①
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
4.4 ①
IDM
Pulsed Drain Current ②
28
Power Dissipation ③
52
W
Linear Derating Factor
0.42
W/°C
VDS
Drain-Source Voltage
650
V
VGS
Gate-to-Source Voltage
± 30
V
EAS
Single Pulse Avalanche Energy @ L=10mH
353
mJ
IAS
Avalanche Current @ L=10mH
8.4
A
-55 to +150
°C
PD @TC = 25°C
TJ
TSTG
www.goodark.com
Operating Junction and Storage Temperature Range
Page 1 of 7
Units
A
Rev.1.2
SSF7N65F
650V N-Channel MOSFET
Thermal Resistance
Symbol
Characteristics
RθJC
RθJA
Typ.
Max.
Units
Junction-to-case ③
—
2.4
℃/W
Junction-to-ambient (t ≤ 10s) ④
—
62
℃/W
Junction-to-Ambient (PCB mounted, steady-state) ④
—
40
℃/W
Electrical Characteristics @TA=25℃
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Qg
unless otherwise specified
Min.
Typ.
Max.
Units
V
650
—
—
—
1.26
1.4
—
2.85
—
2
—
4
—
2.0
—
—
—
1
—
—
50
—
—
100
—
—
-100
Total gate charge
—
31.3
—
Qgs
Gate-to-Source charge
—
6.4
—
Qgd
Gate-to-Drain("Miller") charge
—
11.3
—
td(on)
Turn-on delay time
—
15.7
—
tr
Rise time
—
25.6
—
td(off)
Turn-Off delay time
—
92.9
—
tf
Fall time
—
39.2
—
Ciss
Input capacitance
—
1232
—
Coss
Output capacitance
—
102
—
Crss
Reverse transfer capacitance
—
7.0
—
Ω
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID =3.5A
TJ = 125℃
V
VDS = VGS, ID = 250μA
TJ = 125℃
μA
VDS = 650V,VGS = 0V
TJ = 125℃
nA
VGS =30V
VGS = -30V
ID = 7A,
nC
VDS=300V,
VGS = 10V
VGS=10V, VDS =300V,
nS
RL=43Ω, RGEN=25Ω
ID =7A
VGS = 0V
pF
VDS = 25V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
7
A
—
—
28
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
0.86
1.4
V
IS=7A, VGS=0V
trr
Reverse Recovery Time
—
665
—
nS
TJ = 25°C, IF =7A,
Qrr
Reverse Recovery Charge
—
4096
—
nC
di/dt = 100A/μs
www.goodark.com
Page 2 of 7
Rev.1.2
SSF7N65F
650V N-Channel MOSFET
Test Circuits and Waveforms
Switch Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature.
②Repetitive rating; pulse width limited by max junction temperature.
③The power dissipation PD is based on max junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
www.goodark.com
Page 3 of 7
Rev.1.2
SSF7N65F
650V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 2. Gate to source cut-off voltage
Figure 1: Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage Vs.
Figure 4: Normalized On-Resistance Vs. Case
Case Temperature
www.goodark.com
Temperature
Page 4 of 7
Rev.1.2
SSF7N65F
650V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Maximum Drain Current Vs. Case
Figure 6.Typical Capacitance Vs. Drain-to-Source
Temperature
Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.goodark.com
Page 5 of 7
Rev.1.2
SSF7N65F
650V N-Channel MOSFET
Mechanical Data
TO220F PACKAGE OUTLINE DIMENSION_GN
Symbol
E
E1
E2
A
A1
A2
A3
c
D
D1
H1
e
ФP
ФP 1
ФP 2
ФP 3
L
L1
L2
Q1
Q2
b1
b2
b3
www.goodark.com
Dimension In Millimeters
Min
Nom
Max
9.960
10.160
10.360
9.840
10.040
10.240
6.800
7.000
7.200
4.600
4.700
4.800
2.440
2.540
2.640
2.660
2.760
2.860
0.600
0.700
0.800
0.500
15.780
15.870
15.980
8.970
9.170
9.370
6.500
6.700
6.800
2.54BSC
3.080
3.180
3.280
1.400
1.500
1.600
0.900
1.000
1.100
0.100
0.200
0.300
12.780
12.980
13.180
2.970
3.170
3.370
0.830
0.930
1.030
o
o
o
3
5
7
o
43
1.180
0.760
-
o
45
1.280
0.800
-
o
47
1.380
0.840
1.420
Page 6 of 7
Min
0.392
0.387
0.268
0.181
0.096
0.105
0.024
0.621
0.353
0.256
0.121
0.055
0.035
0.004
0.503
0.117
0.033
o
3
o
43
0.046
0.030
-
Dimension In Inches
Nom
0.400
0.395
0.276
0.185
0.100
0.109
0.028
0.020
0.625
0.361
0.264
0.10BSC
0.125
0.059
0.039
0.008
0.511
0.125
0.037
o
5
o
45
0.050
0.031
-
Max
0.408
0.403
0.283
0.189
0.104
0.113
0.031
0.629
0.369
0.268
0.129
0.063
0.043
0.012
0.519
0.133
0.041
o
7
o
47
0.054
0.033
0.056
Rev.1.2
SSF7N65F
650V N-Channel MOSFET
Ordering and Marking Information
Device Marking: SSF7N65F
Package (Available)
TO220F
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package
Type
Units/
Tube
Tubes/Inner
Box
Units/Inner Inner
Box
Boxes/Carton
Box
Units/Carton
Box
TO220F
50
20
1000
6000
6
Reliability Test Program
Test Item
Conditions
Duration
Sample Size
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃ @ 100% of
Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
www.goodark.com
Page 7 of 7
Rev.1.2