SSPL2015
200V N-Channel MOSFET
Main Product Characteristics
VDSS
200V
RDS(on)
0.13ohm(typ.)
ID
18A
①
TO - 220
Schematic Diagram
Marking and Pin
Assignment
Features and Benefits
Advanced Process Technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
Lead free product
Description
These N-Channel enhancement mode power field effect transistors are produced using our
proprietary MOSFET technology. This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
switch mode power supplies.
Absolute Max Rating
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
18 ①
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
13 ①
IDM
Pulsed Drain Current ②
72
Power Dissipation ③
150
W
Linear Derating Factor
1.0
W/°C
VDS
Drain-Source Voltage
200
V
VGS
Gate-to-Source Voltage
± 30
V
EAS
Single Pulse Avalanche Energy @ L=4.2mH
412
mJ
IAS
Avalanche Current @ L=4.2mH
14
A
-55 to +175
°C
PD @TC = 25°C
TJ
TSTG
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Operating Junction and Storage Temperature Range
Page 1 of 7
Units
A
Rev.1.1
SSPL2015
200V N-Channel MOSFET
Thermal Resistance
Symbol
Characteristics
RθJC
RθJA
Typ.
Max.
Units
Junction-to-case ③
—
1.0
°C/W
Junction-to-ambient (t ≤ 10s) ④
—
62
°C/W
Junction-to-Ambient (PCB mounted, steady-state) ④
—
40
°C/W
Electrical Characteristics @TA=25℃
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Qg
unless otherwise specified
Min.
Typ.
Max.
Units
V
Conditions
200
—
—
—
0.13
0.15
—
0.27
—
2
—
4
—
2.26
—
—
—
1
—
—
50
—
—
100
—
—
-100
Total gate charge
—
22.0
—
Qgs
Gate-to-Source charge
—
6.6
—
Qgd
Gate-to-Drain("Miller") charge
—
7.2
—
VGS = 10V
td(on)
Turn-on delay time
—
11.0
—
VGS=10V, VDD =100V,
tr
Rise time
—
25.5
—
td(off)
Turn-Off delay time
—
21.9
—
tf
Fall time
—
5.2
—
ID =11A
Ciss
Input capacitance
—
1038
—
VGS = 0V
Coss
Output capacitance
—
232
—
Crss
Reverse transfer capacitance
—
51
—
Ω
V
μA
nA
VGS = 0V, ID= 250μA
VGS=10V,ID =11A
TJ = 125°C
VDS = VGS, ID = 250μA
TJ = 125°C
VDS =200V,VGS = 0V
TJ = 125°C
VGS =20V
VGS = -20V
ID = 18A,
nC
nS
pF
VDS=160V,
RL=9.2Ω,
RGEN=2.55Ω
VDS = 25V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
18 ①
A
—
—
72
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
0.89
1.3
V
IS=11A, VGS=0V, TJ = 25°C
trr
Reverse Recovery Time
—
136
—
nS
TJ = 25°C, IF =11A, di/dt =
Qrr
Reverse Recovery Charge
—
900
—
nC
100A/μs
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Page 2 of 7
Rev.1.1
SSPL2015
200V N-Channel MOSFET
Test Circuits and Waveforms
Switch Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature. Package
limitation current is 75A.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C.
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Page 3 of 7
Rev.1.1
SSPL2015
200V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 2. Gate to source cut-off voltage
Figure 1: Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage vs.
Figure 4: Normalized On-Resistance Vs. Case
Temperature
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Temperature
Page 4 of 7
Rev.1.1
SSPL2015
200V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Maximum Drain Current Vs. Case
Figure 6.Typical Capacitance Vs. Drain-to-Source
Temperature
Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Page 5 of 7
Rev.1.1
SSPL2015
200V N-Channel MOSFET
Mechanical Data
TO-220 PACKAGE OUTLINE DIMENSION_GN
Symbol
A
A1
A2
b
b1
b2
C
D
D1
D2
E
E1
ФP
ФP1
e
e1
L
L1
L2
L3
L4
Q1
Q2
Q3
Q4
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Dimension In Millimeters
Min
Nom
Max
4.400
4.550
4.700
1.270
1.300
1.330
2.240
2.340
2.440
1.270
1.270
1.370
1.470
0.750
0.800
0.850
0.480
0.500
0.520
15.100
15.400
15.700
8.800
8.900
9.000
2.730
2.800
2.870
9.900
10.000
10.100
8.700
3.570
3.600
3.630
1.400
1.500
1.600
2.54BSC
5.08BSC
13.150
13.360
13.570
7.35REF
2.900
3.000
3.100
1.650
1.750
1.850
0.900
1.000
1.100
70
90
50
0
0
5
7
90
0
0
5
7
90
1
0
0
3
5
0
Page 6 of 7
Min
0.173
0.050
0.088
0.050
0.030
0.019
0.594
0.346
0.107
0.390
0.141
0.055
0.518
0.114
0.065
0.035
50
50
50
0
1
Dimension In Inches
Nom
Max
0.179
0.185
0.051
0.052
0.092
0.096
0.050
0.054
0.058
0.031
0.033
0.020
0.021
0.606
0.618
0.350
0.354
0.110
0.113
0.394
0.398
0.343
0.142
0.143
0.059
0.063
0.1BSC
0.2BSC
0.526
0.534
0.29REF
0.118
0.122
0.069
0.073
0.039
0.043
70
90
0
7
90
0
7
90
3
0
0
5
Rev.1.1
SSPL2015
200V N-Channel MOSFET
Ordering and Marking Information
Device Marking: SSPL2015
Package (Available)
TO-220
Operating Temperature Range
C : -55 to175 ºC
Devices per Unit
Package
Type
Units/Tube
TO-220
Tubes/Inner
Units/Inner
Box
Box
20
1000
50
Inner
Boxes/Carton
Box
6
Units/Carton
Box
6000
Reliability Test Program
Test Item
Conditions
Duration
Sample Size
High
Tj=125℃ to 175℃ @ 80%
168 hours
3 lots x 77 devices
Temperature
of Max VDSS/VCES/VR
500 hours
1000 hours
Reverse
Bias(HTRB)
High
Tj=125℃ or 175℃ @ 100%
168 hours
Temperature
of Max VGSS
500 hours
Gate
3 lots x 77 devices
1000 hours
Bias(HTGB)
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Page 7 of 7
Rev.1.1