SSFD3006
30V N-Channel MOSFET
Main Product Characteristics
VDSS
30V
RDS(on)
3.8mΩ (typ.)
ID
90A
SSF3612D
SSFD3006
TO-252 (D-PAK)
Schematic Diagram
Assignment
Features and Benefits
Marking and Pin
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
High Power and current handing capability
175℃ operating temperature
Lead free product
Description
It utilizes the advanced trench processing techniques to achieve extremely low on resistance and low gate
charge. These features combine to make this design an extremely efficient and reliable device for use in PWM,
load switching and a wide variety of other applications.
Absolute Max Rating
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
90
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
66
IDM
Pulsed Drain Current②
360
ISM
Pulsed Source Current (Body Diode)②
360
PD @TC = 25°C
Power Dissipation③
75
W
PD @TC =100°C
Power Dissipation③
78
W
VDS
Drain-Source Voltage
30
V
VGS
Gate-to-Source Voltage
± 20
V
dv/dt
Peak diode recovery voltage
1.5
V/nS
EAS
Single Pulse Avalanche Energy @ L=0.1mH
90
mJ
IAS
Avalanche Current @ L=0.1mH
42
A
-55 to + 175
°C
TJ
TSTG
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Operating Junction and Storage Temperature Range
Page 1 of 7
A
Rev.1.0
SSFD3006
30V N-Channel MOSFET
Thermal Resistance
Symbol
Characteristics
RθJC
RθJA
Typ.
Max.
Units
Junction-to-case③
—
2
℃/W
Junction-to-ambient (t ≤ 10s) ④
—
100
℃/W
Junction-to-Ambient (PCB mounted, steady-state) ④
—
50
℃/W
Electrical Characteristics @TA=25℃ unless otherwise specified
Symbol
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Parameter
Max.
Units
—
—
V
—
3.8
6
Static Drain-to-Source
—
6.4
—
on-resistance
—
4.9
8.5
—
7.2
—
1
1.5
3
—
1.21
—
Drain-to-Source leakage
—
—
1
current
—
—
50
Gate-to-Source forward
—
—
100
-100
—
—
Drain-to-Source breakdown
voltage
Gate threshold voltage
leakage
Min.
Typ.
30
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 15A
Qg
Total gate charge
—
35
—
Qgs
Gate-to-Source charge
—
8
—
Qgd
Gate-to-Drain("Miller") charge
—
18
—
td(on)
Turn-on delay time
—
12
—
tr
Rise time
—
63
—
td(off)
Turn-Off delay time
—
41
—
tf
Fall time
—
11
—
Ciss
Input capacitance
—
3833
—
Coss
Output capacitance
—
459
—
Crss
Reverse transfer capacitance
—
427
—
TJ = 125℃
mΩ
VGS=4.5V,ID =11.5A
TJ = 125℃
VDS = VGS, ID = 250μA
V
TJ = 125℃
VDS = 30V,VGS = 0V
μA
TJ = 125°C
VGS =20V
nA
VGS = -20V
ID = 32A,
VDS=15V,
nC
VGS =4.5V
VGS=4.5V, VDS=15V,
ns
RGEN=2Ω，ID = 32A,
VGS = 0V
pF
VDS = 15V
ƒ = 800kHz
Source-Drain Ratings and Characteristics
Symbol
IS
Parameter
Maximum Body-Diode
Continuous Curren
Min.
Typ.
Max.
Units
—
—
90
A
Conditions
VSD
Diode Forward Voltage
—
0.72
1.2
V
IS=2.8A, VGS=0V
trr
Reverse Recovery Time
—
16
—
ns
TJ = 25°C, IF =30A,
Qrr
Reverse Recovery Charge
—
8.8
—
nC
di/dt = 150A/μs
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Page 2 of 7
Rev.1.0
SSFD3006
30V N-Channel MOSFET
Test Circuits and Waveforms
Switch Waveforms:
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C.
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Page 3 of 7
Rev.1.0
SSFD3006
30V N-Channel MOSFET
ID- Drain Current (A)
Is- Reverse Drain Current (A)
Typical Electrical and Thermal Characteristics
Vsd Source-Drain Voltage (V)
Vgs Gate-Source Voltage (V)
Figure 6: Body-Diode Characteristics
Normalized On-Resistance
Rdson On-Resistance (mohm)
Figure 1: Typical Transfer Characteristics
VGS=10V
ID=15A
VGS=4.5V
ID=11.5A
TJ-Junction Temperature(℃)
Vgs Gate-Source Voltage (V)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 4: On-Resistance vs. Junction
ID - Drain Current (A)
Temperature
TJ=175℃
TA=25 ℃
Vds Drain-Source Voltage (V)
Figure 5: Maximum Forward Biased Safe
Operating Area⑤
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Page 4 of 7
Rev.1.0
SSFD3006
30V N-Channel MOSFET
Is- Reverse Drain Current (A)
Thermal Resistance
ZthJA Normalized Transient
Typical Electrical and Thermal Characteristics
Vsd Source-Drain Voltage (V)
Figure 6: Normalized Maximum Transient Thermal Impedance⑥
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Page 5 of 7
Rev.1.0
SSFD3006
30V N-Channel MOSFET
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Page 6 of 7
Rev.1.0
SSFD3006
30V N-Channel MOSFET
Ordering and Marking Information
Device Marking: SSFD3006
Package (Available)
TO-252
Operating Temperature Range
C : -55 to 175 ºC
Devices per Unit
Option1：
Packag
e Type
Units/
Tube
Tubes/Inner
Box
TO-252
80
50
Option2：
Packag Units/
e Type
Tape
TO-252
2500
Option3：
Packag Units/
e Type
Tape
TO-252
2500
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Tapes/Inner
Box
Units/Inner
Box
4000
Units/Inner
Box
2
5000
Tapes/Inner
Box
Units/Inner
Box
1
2500
Page 7 of 7
Inner
Boxes/Carton
Box
10
Units/Carton
Box
Inner
Boxes/Carton
Box
7
Units/Carton
Box
Inner
Boxes/Carton
Box
10
Units/Carton
Box
40000
35000
25000
Rev.1.0