SSF7N60F
600V N-Channel MOSFET
Main Product Characteristics
VDSS
600V
RDS(on)
0.9ohm(typ.)
ID
7A
TO-220F
Marking and Pin
Schematic Diagram
Assignment
Features and Benefits
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
Lead free product
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
7
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
4.4
IDM
Pulsed Drain Current②
28
Power Dissipation③
48
W
Linear Derating Factor
0.38
W/°C
VDS
Drain-Source Voltage
600
V
VGS
Gate-to-Source Voltage
± 30
V
EAS
Single Pulse Avalanche Energy @ L=15.7mH
607.9
mJ
IAS
Avalanche Current @ L=15.7mH
8.8
A
-55 to + 150
°C
PD @TC = 25°C
TJ
TSTG
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Operating Junction and Storage Temperature Range
Page 1 of 7
A
Rev.1.0
SSF7N60F
600V N-Channel MOSFET
Thermal Resistance
Symbol
Characteristics
RθJC
RθJA
Typ.
Max.
Units
Junction-to-case③
—
2.6
℃/W
Junction-to-ambient (t ≤ 10s) ④
—
62
℃/W
Junction-to-Ambient (PCB mounted, steady-state) ④
—
40
℃/W
Electrical Characteristics @TA=25℃
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Qg
unless otherwise specified
Min.
Typ.
Max.
Units
V
Conditions
600
—
—
—
0.9
1.0
—
2.07
—
2
—
4
—
1.92
—
—
—
1
—
—
50
—
—
100
-100
—
—
Total gate charge
—
40.6
—
Qgs
Gate-to-Source charge
—
5.9
—
Qgd
Gate-to-Drain("Miller") charge
—
17.9
—
VGS = 10V
td(on)
Turn-on delay time
—
15.7
—
VGS=10V, VDS=300V,
tr
Rise time
—
35.2
—
td(off)
Turn-Off delay time
—
136.2
—
tf
Fall time
—
58.7
—
ID=7A
Ciss
Input capacitance
—
1171
—
VGS = 0V
Coss
Output capacitance
—
130
—
Crss
Reverse transfer capacitance
—
14
—
Ω
VGS = 0V, ID = 250μA
VGS=10V,ID = 2A
TJ = 125℃
V
VDS = VGS, ID = 250μA
TJ = 125℃
μA
VDS = 600V,VGS = 0V
TJ = 125℃
nA
VGS =30V
VGS = -30V
ID = 7A,
nC
ns
pF
VDS=480V,
RL=42.85Ω,
RGEN=25Ω
VDS = 25V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
7
A
—
—
28
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
0.89
1.3
V
IS=7A, VGS=0V
trr
Reverse Recovery Time
—
368.7
—
ns
TJ = 25°C, IF =7A, di/dt =
Qrr
Reverse Recovery Charge
—
3790
—
nC
100A/μs
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Page 2 of 7
Rev.1.0
SSF7N60F
600V N-Channel MOSFET
Test Circuits and Waveforms
Switch Waveforms:
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C.
⑥ The maximum current rating is limited by bond-wires.
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Page 3 of 7
Rev.1.0
SSF7N60F
600V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 2. Gate to source cut-off voltage
Figure 1: Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage vs.
Figure 4: Normalized On-Resistance Vs. Case
Temperature
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Temperature
Page 4 of 7
Rev.1.0
SSF7N60F
600V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Maximum Drain
Current Vs. Case
Figure 6.Typical Capacitance Vs. Drain-to-Source
Temperature
Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Page 5 of 7
Rev.1.0
SSF7N60F
600V N-Channel MOSFET
Mechanical Data
TO220F PACKAGE OUTLINE DIMENSION
Symbol
A
A1
A2
A3
B1
B2
B3
C
C1
C2
D
D1
D2
D3
E
Dimension In Millimeters
Min
Nom
Max
9.960
10.160
10.360
7.000
3.080
3.180
3.280
9.260
9.460
9.660
15.670
15.870
16.070
4.500
4.700
4.900
6.480
6.680
6.880
3.200
3.300
3.400
15.600
15.800
16.000
9.550
9.750
9.950
2.54 (TYP)
1.470
0.700
0.800
0.900
0.250
0.350
0.450
E1
2.540
0.700
E2
E3
E4
1.0*450
0.500
2.760
ϴ
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2.340
0.450
2.560
2.740
0.600
2.960
300
Min
0.392
0.276
0.121
0.365
0.617
0.177
0.255
0.126
0.614
0.376
0.028
0.010
0.092
0.018
0.101
Dimension In Inches
Nom
0.400
0.000
0.125
0.372
0.625
0.185
0.263
0.130
0.622
0.384
1.00 (TYP)
0.031
0.014
0.100
0.028
1.0*450
0.020
0.109
Max
0.408
0.000
0.129
0.380
0.633
0.193
0.271
0.134
0.630
0.392
0.058
0.035
0.018
0.108
0.024
0.117
300
Page 6 of 7
Rev.1.0
SSF7N60F
600V N-Channel MOSFET
Ordering and Marking Information
Device Marking: SSF7N60F
Package (Available)
TO220F
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Packag
e Type
Units/Tu
be
TO220F
50
Tubes/Inner
Box
20
Reliability Test Program
Test Item
Conditions
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
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Units/Inner Inner
Box
Boxes/Carton
Box
1000
6
Duration
Sample Size
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃ @ 100% of
Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
Page 7 of 7
Units/Carton
Box
6000
Rev.1.0