SSF1502D
150V N-Channel MOSFET
Main Product Characteristics
VDSS
150V
RDS(on)
0.15Ω(typ)
ID
8A
DPAK
Schematic Diagram
Assignment
Features and Benefits
Marking and Pin
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
Lead free product
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
8
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
5
IDM
Pulsed Drain Current②
32
Power Dissipation③
33
W
Linear Derating Factor
0.18
W/°C
VDS
Drain-Source Voltage
150
V
VGS
Gate-to-Source Voltage
± 20
V
-55 to + 175
°C
PD @TC = 25°C
TJ
TSTG
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Operating Junction and Storage Temperature Range
Page 1 of 7
A
Rev.1.0
SSF1502D
150V N-Channel MOSFET
Thermal Resistance
Symbol
Characteristics
RθJC
RθJA
Typ.
Max.
Units
Junction-to-case③
—
4.5
℃/W
Junction-to-Ambient (t ≤ 10s) ④
—
70
℃/W
Junction-to-Ambient (PCB mounted, steady-state) ④
—
53
℃/W
Electrical Characteristics @TA=25℃
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
unless otherwise specified
Min.
Typ.
150
—
0.15
0.2
—
0.32
—
2
—
4
—
2.7
—
—
—
1
—
—
50
100
-100
Units
V
Gate-to-Source forward leakage
Gate-to-Source reverse leakage
Max.
-
Ω
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 3A
TJ = 125℃
V
VDS = VGS, ID = 250μA
TJ = 125℃
μA
A
VDS = 150,Vgs=10V
TJ = 125°C
VGS =20V
VGS = -20V
Qg
Total gate charge
37
Qgs
Gate-to-Source charge
7.5
Qgd
Gate-to-Drain("Miller") charge
13.
VGS = 10V
td(on)
Turn-on delay time
32
VGS=10V, VDD=24.6V,
tr
Rise time
51.5
td(off)
Turn-Off delay time
157
tf
Fall time
67
ID=3.00A
Ciss
Input capacitance
1524
VGS = 0V
Coss
Output capacitance
171
Crss
Reverse transfer capacitance
77
ID = 6A
nC
ns
pF
VDD=120V
RL=8.2Ω,
RGEN=2.55Ω
VDS = 25V
ƒ = 800KHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
Conditions
—
—
8
A
—
—
32
A
1.5
V
IS=6.00A, VGS=0V,TJ= 25°C
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
0.82
trr
Reverse Recovery Time
90
ns
TJ = 25°C, IF =6.00A, di/dt =
Qrr
Reverse Recovery Charge
105
nC
25.0A/μs
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Page 2 of 7
Rev.1.0
SSF1502D
150V N-Channel MOSFET
Test Circuits and Waveforms
Switch Waveforms:
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C.
⑥ The maximum current rating is limited by bond-wires.
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Page 3 of 7
Rev.1.0
SSF1502D
150V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 2. Gate to source cut-off voltage
Figure 1: Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage vs.
Temperature
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Figure 4: Normalized On-Resistance Vs. Case
Temperature
Page 4 of 7
Rev.1.0
SSF1502D
150V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Maximum Drain Current Vs. Case
Figure 6.Typical Capacitance Vs. Drain-to-Source
Temperature
Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Page 5 of 7
Rev.1.0
SSF1502D
150V N-Channel MOSFET
Mechanical Data
DPAK PACKAGE OUTLINE DIMENSION_CD
Symbol
A
A1
B
B1
C
D
D1
D2
E
E1
e
H
F
K
V2
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Dimension In Millimeters
Min
Nom
Max
2.200
2.300
2.380
0.910
1.010
1.110
0.710
0.760
0.810
5.130
5.330
5.460
0.460
0.510
0.560
6.000
6.100
6.200
5.350 (REF)
2.900 (REF)
6.500
6.600
6.700
4.83 (REF)
2.186
2.286
2.386
9.800
10.100
10.400
1.400
1.500
1.700
1.600 (REF)
80 (REF)
Min
0.087
0.036
0.028
0.202
0.018
0.236
0.256
0.086
0.386
0.055
Dimension In Inches
Nom
0.091
0.040
0.030
0.210
0.020
0.240
0.211 (REF)
0.114 (REF)
0.260
0.190 (REF)
0.090
0.398
0.059
0.063 (REF)
Max
0.094
0.044
0.032
0.215
0.022
0.244
0.264
0.094
0.409
0.067
80 (REF)
Page 6 of 7
Rev.1.0
SSF1502D
150V N-Channel MOSFET
Ordering and Marking Information
Device Marking: SSF1502D
Package (Available)
DPAK
Operating Temperature Range
C : -55 to 175 ºC
Devices per Unit
Packag
e Type
Units/Tu
be
DPAK
80
Tubes/Inner
Box
50
Reliability Test Program
Test Item
Conditions
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
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Units/Inner Inner
Box
Boxes/Carton
Box
4000
10
Duration
Sample Size
Tj=125℃ to 175℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃ or 175℃ @
100% of Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
Page 7 of 7
Units/Carton
Box
40000
Rev.1.0