SSF8205UH2 18V Dual N-Channel MOSFET Main Product Characteristics D1 18V RDS(on) 20mohm(typ.) ID 4.5A 8205UH2 VDSS G1 G2 S1 Marking and Pin TSSOP-8 D2 Assignment S2 Schematic Diagram Features and Benefits Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature Lead free product Description It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in buttery protection, power switching application and a wide variety of other applications Absolute Max Rating Parameter Symbol Limit Unit Drain-Source Voltage VDS 18 V Gate-Source Voltage VGS ±10 V ID 4.5 A IDM 25 A PD 1.5 W TJ,TSTG -55 To 150 ℃ RθJA 83 Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Thermal Resistance Thermal Resistance,Junction-to-Ambient (Note 2) www.goodark.com Page 1 of 8 ℃/W Rev.1.0 SSF8205UH2 18V Dual N-Channel MOSFET Electrical Characteristics @TA=25℃ Parameter unless otherwise specified Symbol Condition Min Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 18 Zero Gate Voltage Drain Current IDSS VDS=18V,VGS=0V 1 μA Gate-Body Leakage Current IGSS VGS=±10V,VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 0.8 1.2 V Drain-Source On-State Resistance RDS(ON) VGS=4.5V, ID=4.5A 20 28 mΩ VGS=2.5V, ID=3.5A 25 38 mΩ VDS=5V,ID=4.5A 10 S 800 PF 155 PF Typ Max Unit OFF CHARACTERISTICS V ON CHARACTERISTICS (Note 3) Forward Transconductance gFS 0.5 DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss VDS=8V,VGS=0V, Output Capacitance Coss Reverse Transfer Capacitance Crss 125 PF Turn-on Delay Time td(on) 18.3 nS Turn-on Rise Time tr VDD=10V,ID=1A 4.8 nS td(off) VGS=4V,RGEN=10Ω 43.5 nS 20 nS 11 nC 2.2 nC 2.5 nC F=1.0MHz SWITCHING CHARACTERISTICS (Note 4) Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=10V,ID=4.5A, VGS=4V DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS www.goodark.com Page 2 of 8 VGS=0V,IS=2A 0.8 1.2 V 4.5 A Rev.1.0 SSF8205UH2 18V Dual N-Channel MOSFET Test Circuits and Waveforms Switch Waveforms: NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.goodark.com Page 3 of 8 Rev.1.0 SSF8205UH2 18V Dual N-Channel MOSFET ID - Drain Current (A) ID- Drain Current (A) Typical Electrical and Thermal Characteristics Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 2: Transfer Characteristics Rdson On-Resistance(Ω) Normalized On-Resistance Figure 1: Typical Output Characteristics T J -Junction Temperature(℃) ID - Drain Current (A) Figure 4： Drain-Source On-Resistance Rdson On-Resistance(mΩ) Is - Reverse Drain Current (A) Figure 3: Drain-Source On-Resistance Vgs Gate-Source Voltage (V) Vsd Source-Drain Voltage (V) Figure 6: Rdson vs Vgs Figure 5 : Source- Drain Diode Forward www.goodark.com Page 4 of 8 Rev.1.0 SSF8205UH2 PD Power(W) ID - Drain Current (A） 18V Dual N-Channel MOSFET T J -Junction Temperature(℃) T J-Junction Temperature(℃) Figure 8： Drain Current C Capacitance (pF) Vgs Gate-Source Voltage (V) Figure 7: Power Dissipation Qg Gate Charge (nC) Vds Drain-Source Voltage (V) Figure 9： Gate Charge Figure 11: Figure 10: Capacitance vs Vds Safe Operation Area www.goodark.com Page 5 of 8 Rev.1.0 SSF8205UH2 r(t),Normalized Effective Transient Thermal Impedance 18V Dual N-Channel MOSFET Square Wave Pulse Duration(sec) Figure 12: Normalized Maximum Transient Thermal Impedance www.goodark.com Page 6 of 8 Rev.1.0 SSF8205UH2 18V Dual N-Channel MOSFET Mechanical Data TSSOP-8 Dimensions in Millimeters (UNIT:mm) NOTES： 1. All dimensions are in millimeters. 2. Dimensions are inclusive of plating 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. www.goodark.com Page 7 of 8 Rev.1.0 SSF8205UH2 18V Dual N-Channel MOSFET Ordering and Marking Information Device Marking: 8205UH2 Package (Available) TSSOP-8 Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type TSSOP-8 Units/ Tube 3000pcs Tubes/ Inner Box 2pcs Reliability Test Program Test Item Conditions Units/ Inner Box 6000pcs Inner Boxes/ Carton Box 8pcs Duration Sample Size High Temperature Reverse Bias(HTRB) Tj=125℃ or 150℃ @ 80% of Max VDSS/VCES/VR 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) Tj=125℃ or 150℃ @ 100% of Max VGSS 168 hours 500 hours 1000 hours 3 lots x 77 devices www.goodark.com Page 8 of 8 Units/ Carton Box 48000pcs Rev.1.0