SSF8205UH2

SSF8205UH2
18V Dual N-Channel MOSFET
Main Product Characteristics
D1
18V
RDS(on)
20mohm(typ.)
ID
4.5A
8205UH2
VDSS
G1
G2
S1
Marking and Pin
TSSOP-8
D2
Assignment
S2
Schematic Diagram
Features and Benefits





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Advanced trench MOSFET process technology
Special designed for buttery protection, load
switching and general power management
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
Lead free product
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in buttery protection, power switching application and a wide variety of other
applications
Absolute Max Rating
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
18
V
Gate-Source Voltage
VGS
±10
V
ID
4.5
A
IDM
25
A
PD
1.5
W
TJ,TSTG
-55 To 150
℃
RθJA
83
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Thermal Resistance
Thermal Resistance,Junction-to-Ambient (Note 2)
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Page 1 of 8
℃/W
Rev.1.0
SSF8205UH2
18V Dual N-Channel MOSFET
Electrical Characteristics @TA=25℃
Parameter
unless otherwise specified
Symbol
Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
18
Zero Gate Voltage Drain Current
IDSS
VDS=18V,VGS=0V
1
μA
Gate-Body Leakage Current
IGSS
VGS=±10V,VDS=0V
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
0.8
1.2
V
Drain-Source On-State Resistance
RDS(ON)
VGS=4.5V, ID=4.5A
20
28
mΩ
VGS=2.5V, ID=3.5A
25
38
mΩ
VDS=5V,ID=4.5A
10
S
800
PF
155
PF
Typ
Max
Unit
OFF CHARACTERISTICS
V
ON CHARACTERISTICS (Note 3)
Forward Transconductance
gFS
0.5
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
VDS=8V,VGS=0V,
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
125
PF
Turn-on Delay Time
td(on)
18.3
nS
Turn-on Rise Time
tr
VDD=10V,ID=1A
4.8
nS
td(off)
VGS=4V,RGEN=10Ω
43.5
nS
20
nS
11
nC
2.2
nC
2.5
nC
F=1.0MHz
SWITCHING CHARACTERISTICS (Note 4)
Turn-Off Delay Time
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=10V,ID=4.5A,
VGS=4V
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
Diode Forward Current (Note 2)
IS
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Page 2 of 8
VGS=0V,IS=2A
0.8
1.2
V
4.5
A
Rev.1.0
SSF8205UH2
18V Dual N-Channel MOSFET
Test Circuits and Waveforms
Switch Waveforms:
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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Page 3 of 8
Rev.1.0
SSF8205UH2
18V Dual N-Channel MOSFET
ID - Drain Current (A)
ID- Drain Current (A)
Typical Electrical and Thermal Characteristics
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 2: Transfer Characteristics
Rdson On-Resistance(Ω)
Normalized On-Resistance
Figure 1: Typical Output Characteristics
T J -Junction Temperature(℃)
ID - Drain Current (A)
Figure 4: Drain-Source On-Resistance
Rdson On-Resistance(mΩ)
Is - Reverse Drain Current (A)
Figure 3: Drain-Source On-Resistance
Vgs Gate-Source Voltage (V)
Vsd Source-Drain Voltage (V)
Figure 6: Rdson vs Vgs
Figure 5 : Source- Drain Diode Forward
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Page 4 of 8
Rev.1.0
SSF8205UH2
PD Power(W)
ID - Drain Current (A)
18V Dual N-Channel MOSFET
T J -Junction Temperature(℃)
T J-Junction Temperature(℃)
Figure 8: Drain Current
C Capacitance (pF)
Vgs Gate-Source Voltage (V)
Figure 7: Power Dissipation
Qg Gate Charge (nC)
Vds Drain-Source Voltage (V)
Figure 9: Gate Charge
Figure 11:
Figure 10: Capacitance vs Vds
Safe Operation Area
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Page 5 of 8
Rev.1.0
SSF8205UH2
r(t),Normalized Effective
Transient Thermal Impedance
18V Dual N-Channel MOSFET
Square Wave Pulse Duration(sec)
Figure 12: Normalized Maximum Transient Thermal Impedance
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Page 6 of 8
Rev.1.0
SSF8205UH2
18V Dual N-Channel MOSFET
Mechanical Data
TSSOP-8
Dimensions in Millimeters (UNIT:mm)
NOTES:
1. All dimensions are in millimeters.
2. Dimensions are inclusive of plating
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be
less than 6 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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Page 7 of 8
Rev.1.0
SSF8205UH2
18V Dual N-Channel MOSFET
Ordering and Marking Information
Device Marking: 8205UH2
Package (Available)
TSSOP-8
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package
Type
TSSOP-8
Units/
Tube
3000pcs
Tubes/
Inner Box
2pcs
Reliability Test Program
Test Item
Conditions
Units/
Inner Box
6000pcs
Inner Boxes/
Carton Box
8pcs
Duration
Sample Size
High
Temperature
Reverse
Bias(HTRB)
Tj=125℃ or 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
High
Temperature
Gate
Bias(HTGB)
Tj=125℃ or 150℃ @
100% of Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
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Page 8 of 8
Units/
Carton Box
48000pcs
Rev.1.0