SSF3051G7 30V P-Channel MOSFET Main Product Characteristics D RDS(on) 3051G7 VDSS -30V 45mohm(typ.) G S ID -4A Marking and Pin SOT23-6 Assignment Schematic Diagram Features and Benefits: Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature Lead free product Description It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in buttery protection, power switching application and a wide variety of other applications. Absolute Max Rating Parameter Symbol Limit Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±25 V ID -4 A IDM -25 A PD 1.7 W TJ,TSTG -55 To 150 ℃ Thermal Resistance, Junction-to-Ambient (Note 2) RθJA 75 ℃/W Thermal Resistance, Junction-to-Case(Note 2) RθJC 30 ℃/W Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Thermal Resistance www.goodark.com Page 1 of 8 Rev.1.0 SSF3051G7 30V P-Channel MOSFET Electrical Characteristics @TA=25℃ Parameter unless otherwise specified Typ Max Unit Symbol Condition Min Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -30 Zero Gate Voltage Drain Current IDSS VDS=-24V,VGS=0V -1 μA Gate-Body Leakage Current IGSS VGS=±25V,VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -1.6 -3 V Drain-Source On-State Resistance RDS(ON) VGS=-10V, ID=-4A 45 51 mΩ VGS=-4.5V, ID=-3.4A 65 85 mΩ VDS=-5V,ID=-4A 8.5 S 520 PF 94 PF OFF CHARACTERISTICS V ON CHARACTERISTICS (Note 3) Forward Transconductance gFS -1 DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss VDS=-15V,VGS=0V, Output Capacitance Coss Reverse Transfer Capacitance Crss 73 PF Turn-on Delay Time td(on) 8.9 nS Turn-on Rise Time tr VDD=-15V,ID=-1A 4.0 nS td(off) VGS=-10V,RGEN=6Ω 22.6 nS 5.5 nS 7.1 nC 0.86 nC 3.9 nC F=1.0MHz SWITCHING CHARACTERISTICS (Note 4) Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=-5V,ID=-4A, VGS=-5V DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS Reverse Recovery Time trr Tj=25℃,IF=-4A, 10.3 nS Reverse Recovery Charge Qrr di/dt=-100A/uS 4.3 nC www.goodark.com VGS=0V,IS=-1.3A Page 2 of 8 -0.8 -1.2 V -4 A Rev.1.0 SSF3051G7 30V P-Channel MOSFET Test Circuits and Waveforms Switch Waveforms: NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.goodark.com Page 3 of 8 Rev.1.0 SSF3051G7 30V P-Channel MOSFET Typical Electrical and Thermal Characteristics Figure 1: Typical Output Characteristics Figure 2: Transfer Characteristics Figure 4： Drain-Source On-Resistance Figure 3: Drain-Source On-Resistance Figure 6: Rdson vs Vgs Figure 5 : Source- Drain Diode Forward www.goodark.com Page 4 of 8 Rev.1.0 SSF3051G7 PD Power(W) ID - Drain Current (A） 30V P-Channel MOSFET T J -Junction Temperature(℃) T J-Junction Temperature(℃) Figure 7: Power Dissipation Figure 8： Drain Current Figure 9： Gate Charge Figure 11: Safe Operation Area www.goodark.com Figure 10: Capacitance vs Vds Figure 12: Page 5 of 8 Single Pulse Maximum Power Dissipation Rev.1.0 SSF3051G7 30V P-Channel MOSFET Figure 13: Normalized Maximum Transient Thermal Impedance www.goodark.com Page 6 of 8 Rev.1.0 SSF3051G7 30V P-Channel MOSFET Mechanical Data SOT23-6 Dimensions in Millimeters (UNIT:mm) NOTES： 1. All dimensions are in millimeters. 2. Dimensions are inclusive of plating 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. www.goodark.com Page 7 of 8 Rev.1.0 SSF3051G7 30V P-Channel MOSFET Ordering and Marking Information Device Marking: 3051G7 Package (Available) SOT23-6 Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type SOT23-6 Units/ Tube 3000pcs Tubes/ Inner Box 10pcs Reliability Test Program Test Item Conditions Units/ Inner Box 30000pcs Inner Boxes/ Units/ Carton Box Carton Box 4pcs 120000pcs Duration Sample Size High Temperature Reverse Bias(HTRB) Tj=125℃ or 150℃ @ 80% of Max VDSS/VCES/VR 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) Tj=125℃ or 150℃ @ 100% of Max VGSS 168 hours 500 hours 1000 hours 3 lots x 77 devices www.goodark.com Page 8 of 8 Rev.1.0