SSFT3906
30V N-Channel MOSFET
Main Product Characteristics
VDSS
30V
SSFT3906
RDS(on)
3.2mohm(typ.)
ID
90A
TO-220
Assignment
Features and Benefits
Schematic Diagram
Marking and Pin
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
Lead free product
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
90
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
60
IDM
Pulsed Drain Current②
180
Power Dissipation③
91
W
Linear Derating Factor
0.61
W/°C
VDS
Drain-Source Voltage
30
V
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy @ L=0.3mH
304
mJ
IAS
Avalanche Current @ L=0.3mH
45
A
-55 to + 175
°C
PD @TC = 25°C
TJ
TSTG
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Operating Junction and Storage Temperature Range
Page 1 of 6
A
Rev.2.0
SSFT3906
30V N-Channel MOSFET
Thermal Resistance
Symbol
Characteristics
RθJC
RθJA
Typ.
Max.
Units
Junction-to-case③
—
1.65
℃/W
Junction-to-ambient (t ≤ 10s) ④
—
62
℃/W
Junction-to-Ambient (PCB mounted, steady-state) ④
—
40
℃/W
Electrical Characteristics @TA=25℃
Symbol
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Parameter
unless otherwise specified
Max.
Units
—
—
V
—
3.2
6
Static Drain-to-Source
—
4.3
—
on-resistance
—
4.8
8.5
—
6.2
—
1
1.73
3
—
1.52
—
Drain-to-Source leakage
—
—
1
current
—
—
50
Gate-to-Source forward
—
—
100
-100
—
—
Drain-to-Source breakdown
voltage
Gate threshold voltage
leakage
Min.
Typ.
30
Qg
Total gate charge
—
35.25
—
Qgs
Gate-to-Source charge
—
11.04
—
Qgd
Gate-to-Drain("Miller") charge
—
15.94
—
td(on)
Turn-on delay time
—
14.6
—
tr
Rise time
—
48.9
—
td(off)
Turn-Off delay time
—
30.6
—
tf
Fall time
—
10.3
—
Ciss
Input capacitance
—
4315
—
Coss
Output capacitance
—
439
—
Crss
Reverse transfer capacitance
—
403
—
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 30A
mΩ
TJ = 125℃
VGS=4.5V,ID = 20A
TJ = 125℃
V
VDS = VGS, ID = 250μA
TJ = 125℃
μA
nA
VDS = 30V,VGS = 0V
TJ = 125°C
VGS =20V
VGS = -20V
ID = 32A,
nC
VDS=15V,
VGS =4.5V
ns
VGS=4.5V, VDS=15V,
RGEN=2Ω，ID = 32A,
VGS = 0V
pF
VDS = 15V
ƒ = 800kHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
90
A
—
—
180
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
0.71
1.3
V
IS=1A, VGS=0V
trr
Reverse Recovery Time
—
15.8
—
ns
TJ = 25°C, IF =30A,
Qrr
Reverse Recovery Charge
—
8.0
—
nC
di/dt = 150A/μs
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Page 2 of 6
Rev.2.0
SSFT3906
30V N-Channel MOSFET
Test Circuits and Waveforms
Switch Waveforms:
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C.
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Page 3 of 6
Rev.2.0
SSFT3906
30V N-Channel MOSFET
ID- Drain Current (A)
Rdson On-Resistance (mohm)
Typical Electrical and Thermal Characteristics
Vgs Gate-Source Voltage (V)
Vgs Gate-Source Voltage (V)
Figure 2: Transfer Characteristics
Normalized On-Resistance
Ω )
Rdson On-Resistance (m
Figure 1: Rdson vs Vgs
Vgs=10V
ID=30A
Vgs=4.5V
ID=20A
150
TJ-Junction Temperature(℃)
ID- Drain Current (A)
Figure 3: Drain-Source On-Resistance
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Figure 4: Drain-Source On-Resistance
Page 4 of 6
Rev.2.0
SSFT3906
30V N-Channel MOSFET
Mechanical Data
TO220 PACKAGE OUTLINE DIMENSION
Symbol
A
A1
A2
b
b2
c
D
D1
DEP
E
E1
ФP 1
e
e1
H1
L
L1
L2
ФP
Q
Q1
ϴ1
ϴ2
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Dimension In Millimeters
Min
Nom
Max
4.400
4.550
4.700
1.270
1.300
1.330
2.590
2.690
2.790
0.770
0.900
1.230
1.360
0.480
0.500
0.520
15.100
15.400
15.700
9.000
9.100
9.200
0.050
0.285
0.520
10.060
10.160
10.260
8.700
1.400
1.500
1.600
2.54BSC
5.08BSC
6.100
6.300
6.500
12.750
12.960
13.170
3.950
1.85REF
3.570
3.600
3.630
2.730
2.800
2.870
0.200
0
5
0
1
0
7
0
3
0
9
0
5
Page 5 of 6
Min
0.173
0.050
0.102
0.030
0.048
0.019
0.354
0.002
0.396
0.055
0.240
0.502
0.141
0.107
0
5
0
1
Dimension In Inches
Nom
0.179
0.051
0.106
0.020
0.606
0.358
0.011
0.400
0.343
0.059
0.1BSC
0.2BSC
0.248
0.510
0.073REF
0.142
0.110
0.008
0
7
0
3
Max
0.185
0.052
0.110
0.035
0.054
0.020
0.362
0.020
0.404
0.063
0.256
0.519
0.156
0.143
0.113
0
9
0
5
Rev.2.0
SSFT3906
30V N-Channel MOSFET
Ordering and Marking Information
Device Marking: SSFT3906
Package (Available)
TO220
Operating Temperature Range
C : -55 to 175 ºC
Devices per Unit
Package
Type
TO220
Units/ Tubes/
Tube Inner Box
50
20
Reliability Test Program
Test Item
Conditions
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Units/
Inner Box
1000
Inner Boxes/
Carton Box
6
Duration
Sample Size
Tj=150℃ or 175℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃ or 175℃ @
100% of Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
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Page 6 of 6
Units/
Carton Box
6000
Rev.2.0