SSF7504

SSF7504
75V N-Channel MOSFET
FEATURES
ID=220A

Advanced trench process technology

Special designed for Convertors and power controls

High density cell design for ultra low RDS(ON)

Fully characterized Avalanche voltage and current

Avalanche Energy 100% test

Lead free product
BV=75V
RDS(ON)=2.7mΩ (typ.)
DESCRIPTION
The SSF7504 is a new generation of middle voltage and
high current N–Channel enhancement mode trench power
MOSFET. This new technology increases the cell density
and reduces the on-resistance; its typical RDS(ON) can reduce
to 2.7mohm.
APPLICATIONS

Power switching application
SSF7504 Top View (TO-220)
Absolute Maximum Ratings
Parameter
Max.
Units
ID@Tc=25ْ C
Continuous drain current,VGS@10V
220
ID@Tc=100ْC
Continuous drain current,VGS@10V
170
IDM
Pulsed drain current ①
880
PD@TC=25ْC
Power dissipation
370
W
Linear derating factor
2.0
W/ْ C
VGS
Gate-to-Source voltage
±20
V
dv/dt
Peak diode recovery voltage
20
v/ns
EAS
Single pulse avalanche energy ②
960
mJ
EAR
Repetitive avalanche energy
TBD
TJ
Operating Junction and
TSTG
Storage Temperature Range
A
–55 to +175
ْC
Thermal Resistance
Parameter
Min.
Typ.
Max.
RθJC
Junction-to-case
—
0.41
—
RθJA
Junction-to-ambient
—
—
62
Units
ْC/W
Electrical Characteristics @TJ=25ْ C(unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Test Conditions
BVDSS
Drain-to-Source breakdown voltage
75
—
—
V
VGS=0V,ID=250μA
RDS(on)
Static Drain-to-Source on-resistance
—
2.7
4
mΩ
VGS=10V,ID=40A
VGS(th)
Gate threshold voltage
2.0
3.1
4.0
V
VDS=VGS,ID=250μA
gfs
Forward transconductance
—
65
—
S
VDS=5V,ID=30A
IDSS
Drain-to-Source leakage current
—
—
10
μA
VDS=80V,VGS=0V
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Page 1 of 6
Rev.2.0
SSF7504
75V N-Channel MOSFET
VDS=80V,
—
—
50
Gate-to-Source forward leakage
—
—
100
Gate-to-Source reverse leakage
—
—
-100
Qg
Total gate charge
—
140
—
Qgs
Gate-to-Source charge
—
30
—
Qgd
Gate-to-Drain("Miller") charge
—
36
—
td(on)
Turn-on delay time
—
22
—
VDD=30V
ID=2A ,RL=15Ω
IGSS
VGS=0V,TJ=150ْC
VGS=20V
nA
VGS=-20V
ID=30A
VDD=30V
nC
VGS=10V
tr
Rise time
—
35
—
td(off)
Turn-Off delay time
—
77.8
—
tf
Fall time
—
19.8
—
VGS=10V
Ciss
Input capacitance
—
7005
—
VGS=0V
Coss
Output capacitance
—
600
—
Crss
Reverse transfer capacitance
—
280
—
nS
RG=2.5Ω
VDS=25V
pF
f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
IS
.
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) ①
.
Min.
Typ.
Max.
—
—
220
Units
MOSFET symbol
A
—
—
880
Test Conditions
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
—
1.3
V
TJ=25ْC,IS=40A,VGS=0V ③
trr
Reverse Recovery Time
－
80
—
nS
TJ=25ْC,IF=75A
Qrr
Reverse Recovery Charge
－
270
—
nC
di/dt=100A/μs ③
ton
Forward Turn-on Time
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
① Repetitive rating; pulse width limited by max junction temperature.
② Test condition: L =0.3mH, ID = 80A, VDD = 37.5V.
③ Pulse width≤300μS; duty cycle≤1.5% RG = 25ΩStarting TJ = 25°C.
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Page 2 of 6
Rev.2.0
SSF7504
75V N-Channel MOSFET
EAS test circuits
Switch Time Test Circuit
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Gate charge test circuit
Switch Waveforms
Page 3 of 6
Rev.2.0
SSF7504
75V N-Channel MOSFET
Figure1: Transfer Characteristic
Figure2: Capacitance
Figure3: On Resistance vs Junction Temperature
Figure4: Breakdown Voltage vs Junction
Temperature
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Page 4 of 6
Rev.2.0
SSF7504
75V N-Channel MOSFET
Figure5:Gate Charge
Figure7:Safe Operation Area
Figure6:Source-Drain Diode Forward Voltage
Figure8: Max Drain Current vs Junction
Figure9: Transient Thermal Impedance Curve
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Page 5 of 6
Rev.2.0
SSF7504
75V N-Channel MOSFET
TO-220 MECHANICAL DATA
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Page 6 of 6
Rev.2.0