SSF7509 Feathers: ID=80A Advanced trench process technology Special designed for Convertors and power controls High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test BV=80V Rdson=8mohm Description: The SSF7509 is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the cell density and reduces the on-resistance; its typical Rdson can reduce to 6.2mohm. Application: Power switching application SSF7509 TOP View (TO220) Absolute Maximum Ratings Parameter Max. Units ID@Tc=25 ْC Continuous drain current,VGS@10V 80 ID@Tc=100ْC Continuous drain current,VGS@10V 72 IDM Pulsed drain current ① 320 PD@TC=25ْC Power dissipation 165 W Linear derating factor 2.0 W/ ْC VGS Gate-to-Source voltage ±20 V dv/dt Peak diode recovery voltage 31 v/ns EAS Single pulse avalanche energy ② 500 mJ EAR Repetitive avalanche energy TBD TJ Operating Junction and TSTG Storage Temperature Range A –55 to +150 ْC Thermal Resistance Parameter Min. Typ. Max. RθJC Junction-to-case — 0.75 — RθJA Junction-to-ambient — — 62 Units ْC/W Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter Min. Typ. BVDSS Drain-to-Source breakdown voltage 80 — RDS(on) Static Drain-to-Source on-resistance — VGS(th) Gate threshold voltage 2.0 gfs Forward transconductance - IDSS IGSS Drain-to-Source leakage current Gate-to-Source forward leakage ©Silikron Semiconductor CO.,LTD. 2008.8.1 Max. Units — Test Conditions V VGS=0V,ID=250μA Ω VGS=10V,ID=40A 4.0 V VDS=VGS,ID=250μA 58 — S VDS=5V,ID=30A — — 2 — — 10 — — 100 0.0067 0.008 VDS=80V,VGS=0V μA VDS=80V, VGS=0V,TJ=150ْC nA Version : 1.0 VGS=20V page 1of5 SSF7509 Gate-to-Source reverse leakage — — -100 Qg Total gate charge — 100 — Qgs Gate-to-Source charge — 18 — Qgd Gate-to-Drain("Miller") charge — 28 — nC VDD=30V VGS=10V td(on) Turn-on delay time — 20 — VDD=30V tr Rise time — 17.8 — td(off) Turn-Off delay time — 76.8 — tf Fall time — 15.7 — VGS=10V Ciss Input capacitance — 3200 — VGS=0V Coss Output capacitance — 330 — Crss Reverse transfer capacitance — 260 — VGS=-20V ID=30A nS ID=2A ,RL=15Ω RG=2.5Ω pF VDS=25V f=1.0MHZ Source-Drain Ratings and Characteristics Parameter Continuous Source Current IS . (Body Diode) ISM Pulsed Source Current (Body Diode) ① . Min. Typ. Max. — — 80 Units MOSFET symbol A — — 320 Test Conditions showing the integral reverse p-n junction diode. VSD Diode Forward Voltage — — 1.3 V TJ=25ْC,IS=40A,VGS=0V ③ trr Reverse Recovery Time - 57 — nS TJ=25ْC,IF=75A Qrr Reverse Recovery Charge - 108 — nC di/dt=100A/μs ③ ton Forward Turn-on Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) Notes: ① Repetitive rating; pulse width limited by max junction temperature. ② Test condition: L =0.3mH, ID = 57A, VDD = 47V ③ Pulse width≤300μS; duty cycle≤1.5% RG = 25ΩStarting TJ = 25°C EAS test circuits: Gate charge test circuit: BV dss ©Silikron Semiconductor CO.,LTD. 2008.8.1 Version : 1.0 page 2of5 SSF7509 Switch Waveforms: Switch Time Test Circuit: Transfer Characteristic Capacitance On Resistance vs Junction Temperature Breakdown Voltage vs Junction Temperature ©Silikron Semiconductor CO.,LTD. 2008.8.1 Version : 1.0 page 3of5 SSF7509 Gate Charge Source-Drain Diode Forward Voltage Max Drain Current vs Junction Temperature Safe Operation Area Transient Thermal Impedance Curve ©Silikron Semiconductor CO.,LTD. 2008.8.1 Version : 1.0 page 4of5 SSF7509 TO220 MECHANICAL DATA: ©Silikron Semiconductor CO.,LTD. 2008.8.1 Version : 1.0 page 5of5