SSF4015 40V P-Channel MOSFET Main Product Characteristics VDSS -40V RDS(on) 11mΩ (typ.) ID -20A D SSF3612D SSF4015 SSF4035 S TO-252 (D-PAK) Marking and Pin Schematic Diagram Assignment Features and Benefits G Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge High Power and current handing capability 175℃ operating temperature Lead free product Description: It utilizes the advanced trench processing techniques to achieve extremely low on resistance and low gate charge. These features combine to make this design an extremely efficient and reliable device for use in PWM, load switching and a wide variety of other applications. Absolute Max Rating Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V① -20 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V① -16 IDM Pulsed Drain Current② -50 ISM Pulsed Source Current (Body Diode)② -50 PD @TC = 25°C Power Dissipation③ 75 W VDS Drain-Source Voltage -40 V VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy @ L=0.1mH 40 mJ IAS Single Pulse Avalanche Current @ L=0.1mH 28 A TJ TSTG Operating Junction and Storage Temperature Range -55 to + 175 °C www.goodark.com Page 1 of 5 A Rev.1.1 SSF4015 40V P-Channel MOSFET Thermal Resistance Symbol Characteristics RθJA Value Unit Junction-to-ambient (t ≤ 10s) ④ 14 ℃/W Junction-to-Ambient (PCB mounted, steady-state) ④ 40 ℃/W 2 ℃/W Maximum Junction-to-Case⑤ RJC Electrical Characteristics @TA=25℃ unless otherwise specified Symbol BVDSS Parameter Drain-to-Source breakdown voltage Min. Typ. Max. Units -40 — — V — 11 15 — 14.3 — Conditions VGS = 0V, ID = 250μA VGS=10V, RDS(on) VGS(th) IDSS Static Drain-to-Source on-resistance IGSS mΩ — 18.5 25 — 23.6 — Gate threshold voltage -1 Drain-to-Source leakage — current — — -5 — — 100 Gate-to-Source forward leakage Gate-to-Source reverse leakage -3 — -100 — — 5 27 — Qg Total gate charge — 57.4 40 Qgs Gate-to-Source charge — 10.8 6 — 11.9 15 charge td(on) Turn-on delay time — 15.2 — tr Rise time — 23.7 — td(off) Turn-Off delay time — 53.3 — tf Fall time — 12.7 — Ciss Input capacitance — 5188 — Coss Output capacitance — 376 — — 293 — Crss Reverse transfer capacitance www.goodark.com VGS=4.5V, TJ = 125℃ V VDS = VGS, ID =250uA VDS =-40V,VGS = 0V μA TJ = 55°C VGS =20V nA Forward transconductance Qgd TJ = 125℃ ID = 8A -1 G(fs) Gate-to-Drain("Miller") ID = 12A Page 2 of 5 VGS = -20V S VDS=-5V,ID=-12.0A ID=-20A, nC VDD=-12V, VGS=-10V VDD=-18.8V,ID=-12.5A, ns RL=1.50Ω,RG=3.00Ω, VGS=-10V Vds=-20V, pF Vgs=0V, f=1MHZ Rev.1.1 SSF4015 40V P-Channel MOSFET Source-Drain Ratings and Characteristics Symbol IS VSD Parameter Maximum Body-Diode Continuous Curren Diode Forward Voltage Min. Typ. Max. Units — 20 — A — -0.74 1.2 V Conditions TJ=25ْC,IS=-1A,VGS=0V Test circuits and Waveforms Switch Waveforms: Notes: ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C www.goodark.com Page 3 of 5 Rev.1.1 SSF4015 40V P-Channel MOSFET Mechanical Data www.goodark.com Page 4 of 5 Rev.1.1 SSF4015 40V P-Channel MOSFET Ordering and Marking Information Device Marking: SSF4015 Package (Available) TO-252 Operating Temperature Range C : -55 to 175ºC Devices per Unit Option1: Package Units/ Tubes/Inner Type Tube Box TO-252 80 50 Units/Inner Box 4000 Inner Boxes/Carton Box 10 Units/Carton Box Inner Boxes/Carton Box 7 Units/Carton Box Inner Boxes/Carton Box 10 Units/Carton Box 40000 Option2: Package Units/ Tapes/Inner Tape Box Type TO-252 2500 2 Units/Inner Box 5000 35000 Option3: Package Units/ Tapes/Inner Type Tape Box TO-252 2500 www.goodark.com 1 Units/Inner Box 2500 Page 5 of 5 25000 Rev.1.1