SSF2122E
20V Dual N-Channel MOSFET
Main Product Characteristics
VDSS
20V
RDS(on) 15.2mohm(typ.)
ID
7A
①
DFN 3x3-8L
Marking and Pin
Schematic Diagram
Assignment
Features and Benefits
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
Lead free product
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V(Silicon Limited)
7 ①
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
5 ①
IDM
Pulsed Drain Current ②
42
PD @TC = 25°C
Power Dissipation
1.4
W
VDS
Drain-Source Voltage
20
V
VGS
Gate-to-Source Voltage
± 12
V
-55 to + 150
°C
TJ
TSTG
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Operating Junction and Storage Temperature Range
Page 1 of 8
Units
A
Rev.1.0
SSF2122E
20V Dual N-Channel MOSFET
Electrical Characteristics @TA=25℃
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
unless otherwise specified
Min.
Typ.
Max.
Units
20
—
—
V
—
15.2
23
—
15.9
24
—
17.6
30
—
20.8
35
0.5
—
1
—
0.30
—
—
—
1
—
—
10
—
—
-10
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Qg
Total gate charge
—
24.1
—
Qgs
Gate-to-Source charge
—
1.4
—
Qgd
Gate-to-Drain("Miller") charge
—
4.2
—
td(on)
Turn-on delay time
—
5.3
—
tr
Rise time
—
18.2
—
td(off)
Turn-Off delay time
—
25
—
tf
Fall time
—
3
—
Ciss
Input capacitance
—
681
—
Coss
Output capacitance
—
124
—
Crss
Reverse transfer capacitance
—
117
—
Conditions
VGS = 0V, ID = 250μA
VGS=4.5V,ID = 4A
mΩ
VGS=4V,ID=4A
VGS=3.1V,ID=4A
VGS=2.5V,ID=2A
V
VDS = VGS, ID = 250μA
TJ = 125℃
μA
μA
VDS = 20V,VGS = 0V
VGS =8V
VGS = -8V
ID = 7A,
nC
VDS=10V,
VGS = 10V
nS
VGS=4V, VDS =10V,
RL=2.86Ω,ID = 3.5A
VGS = 0V,
pF
VDS =10V,
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
7 ①
A
—
—
42
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
0.7
1.2
V
IS=1.5A, VGS=0V
trr
Reverse Recovery Time
—
34.3
—
nS
TJ = 25°C, IF =7A, di/dt =
Qrr
Reverse Recovery Charge
—
10.2
—
nC
100A/μs
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Page 2 of 8
Rev.1.0
SSF2122E
20V Dual N-Channel MOSFET
Test Circuits and Waveforms
Switch Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature.
②Repetitive rating; pulse width limited by max junction temperature.
③The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
④These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C.
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Page 3 of 8
Rev.1.0
SSF2122E
20V Dual N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 1: Typical Output Characteristics
Figure 2. Typical Transfer Characteristics
Figure 3. Gate to source cut-off oltage
Figure 4: Drain-to-Source Breakdown Voltage vs.
Temperature
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Page 4 of 8
Rev.1.0
SSF2122E
20V Dual N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Normalized On-Resistance Vs. Case
Figure 6. Normalized On-Resistance Vs. Gate to
Temperature
Source voltage
Figure 8. Gate-Charge Characteristics
Figure 7. Typical Capacitance Vs. Drain-to-Source
Voltage
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Page 5 of 8
Rev.1.0
SSF2122E
20V Dual N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure9. Maximum Drain Current Vs. Case Temperature
Figure10. Forward Current Vs. Diode Forward Voltage
Figure11. Power Dissipation Vs. Case Temperature
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Page 6 of 8
Rev.1.0
SSF2122E
20V Dual N-Channel MOSFET
Mechanical Data
DFN3×3-8L PACKAGE OUTLINE DIMENSION:
Dim.
A
A1
b
c
D
E
E1
e
L
L1
θ1
Millimeters
NOM
0.80
--0.30
0.152
2.90 BSC
2.80 BSC
2.30 BSC
0.65 BSC
0.20
0.375
0
--0°
10°
MIN
0.700
0.00
0.24
0.08
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MAX
0.900
0.05
0.35
0.25
MIN
0.0276
0.000
0.009
0.003
0.450
0.100
12°
0.008
0
0°
Inches
NOM
MAX
0.0315
0.0354
--0.002
0.012
0.014
0.006
0.010
0.114 BSC
0.110 BSC
0.091 BSC
0.026 BSC
0.0148
0.0177
--0.004
10°
12°
Page 7 of 8
Rev.1.0
SSF2122E
20V Dual N-Channel MOSFET
Ordering and Marking Information
Device Marking: 2122E
Package (Available)
DFN 3x3-8L
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package
Type
Units/
Tape
Tapes/
Inner Box
DFN 3x3-8L
3000pcs 4pcs
Reliability Test Program
Test Item
Conditions
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
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Units/
Inner Box
Inner Boxes/
Carton Box
Units/
Carton Box
12000pcs
4pcs
48000pcs
Duration
Sample Size
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃@ 100% of
Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
Page 8 of 8
Rev.1.0