SSF11NS65
650V N-Channel MOSFET
Main Product Characteristics
VDSS
650V
RDS(on)
0.36ohm(typ.)
ID
11A
Marking and Pin
TO-220
Schematic Diagram
Assignment
Features and Benefits
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Lead free product
Description
The SSF11NS65 series MOSFET is a new technology. which combines an innovative super junction
technology and advance process. This new technology achieves low RDS(ON), energy saving,
high
reliability and uniformity, superior power density and space saving.
Absolute Max Rating
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V ①
11
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V ①
7
IDM
Pulsed Drain Current ②
44
Power Dissipation ③
162
W
Linear Derating Factor
1.5
W/°C
VDS
Drain-Source Voltage
650
V
VGS
Gate-to-Source Voltage
± 30
V
EAS
Single Pulse Avalanche Energy @ L=22.5mH
281
mJ
IAS
Avalanche Current @ L=22.5mH
5
A
-55 to + 150
°C
PD @TC = 25°C
TJ
TSTG
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Operating Junction and Storage Temperature Range
Page 1 of 7
A
Rev.1.2
SSF11NS65
650V N-Channel MOSFET
Thermal Resistance
Symbol
Characteristics
RθJC
RθJA
Typ.
Max.
Units
Junction-to-case③
—
0.77
℃/W
Junction-to-ambient (t ≤ 10s) ④
—
62
℃/W
Junction-to-Ambient (PCB mounted, steady-state) ④
—
40
℃/W
Electrical Characteristics @TA=25℃
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Qg
unless otherwise specified
Min.
Typ.
Max.
Units
V
Conditions
650
—
—
—
0.36
0.41
—
0.88
—
2
—
4
—
2.46
—
—
—
1
—
—
50
—
—
100
-100
—
—
Total gate charge
—
28.41
—
Qgs
Gate-to-Source charge
—
6.64
—
Qgd
Gate-to-Drain("Miller") charge
—
12.34
—
VGS = 10V
td(on)
Turn-on delay time
—
12.85
—
VGS=10V, VDS=300V,
tr
Rise time
—
9.45
—
td(off)
Turn-Off delay time
—
30.40
—
tf
Fall time
—
6.30
—
ID=5.5A
Ciss
Input capacitance
—
824.8
—
VGS = 0V
Coss
Output capacitance
—
78.06
—
Crss
Reverse transfer capacitance
—
2.75
—
Ω
VGS = 0V, ID = 250μA
VGS=10V,ID = 5.5A
TJ = 125℃
V
VDS = VGS, ID = 250μA
TJ = 125℃
μA
nA
VDS =650V,VGS = 0V
TJ = 125°C
VGS =30V
VGS = -30V
ID = 11A,
nC
ns
pF
VDS=480V,
RL=54.5Ω,
RGEN=4.7Ω
VDS = 50V
ƒ = 600KHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
11
A
—
—
44
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
—
1.5
V
IS=11A, VGS=0V
trr
Reverse Recovery Time
—
313
—
ns
TJ = 25°C, IF =11A, di/dt =
Qrr
Reverse Recovery Charge
—
2.98
—
uC
100A/μs
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Page 2 of 7
Rev.1.2
SSF11NS65
650V N-Channel MOSFET
Test Circuits and Waveforms
Switch Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature. Package
limitation current is 75A.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C.
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Page 3 of 7
Rev.1.2
SSF11NS65
650V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 2. Typ. Gate to source cut-off voltage
Figure 1: Power dissipation
Figure 3. Typ. gate charge
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Figure 4: Typ. Capacitances
Page 4 of 7
Rev.1.2
SSF11NS65
650V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Drain-source breakdown voltage
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Figure 6. Drain-source on-state resistance
Page 5 of 7
Rev.1.2
SSF11NS65
650V N-Channel MOSFET
Mechanical Data
TO-220 PACKAGE OUTLINE DIMENSION_GN
E
ФP
A
ϴ1
D
D2
ФP1
ϴ
ϴ2
D1
b1
b
A1
ϴ4
L
c
e
Symbol
A
A1
b
b1
c
D
D1
D2
E
E1
ФP
ФP1
e
L
ϴ1
ϴ2
ϴ3
ϴ4
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Dimension In Millimeters
Min
Nom
Max
1.300
2.200
2.400
2.600
1.270
1.270
1.370
1.470
0.500
15.600
28.700
9.150
9.900
10.000
10.100
10.160
3.600
1.500
2.54BSC
12.900
13.100
13.300
0
7
0
7
30
0
3
Page 6 of 7
E
Dimension In Inches
Nom
Max
0.051
0.094
0.102
0.050
0.054
0.058
0.020
0.614
1.130
0.360
0.394
0.398
0.400
0.142
0.059
0.1BSC
0.508
0.516
0.524
0
7
0
7
Min
0.087
0.050
0.390
-
50
70
90
10
30
50
Rev.1.2
SSF11NS65
650V N-Channel MOSFET
Ordering and Marking Information
Device Marking: SSF11NS65
Package (Available)
TO220
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Packag
e Type
Units/Tu
be
TO220
50
Tubes/Inner
Box
20
Reliability Test Program
Test Item
Conditions
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
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Units/Inner Inner
Box
Boxes/Carton
Box
1000
6
Duration
Sample Size
Tj=125℃ to 175℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃ or 175℃ @
100% of Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
Page 7 of 7
Units/Carton
Box
6000
Rev.1.2