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AS5170
High-Resolution On-Axis Magnetic
Angular Position Sensor
General Description
The AS5170 is a high-resolution angular position sensor for
precise absolute angle measurement. The AS5170 is available
with an analog output interface (AS5170A) or a digital output
interface (AS5170B). The latter can be programmed as a PWM
or a SENT-compliant output interface.
Based on a Hall sensor technology, this device measures the
orthogonal component of the flux density (Bz) over a full-turn
rotation and compensates for external stray magnetic fields
with a robust architecture based on a 14-bit sensor array and
analog front-end (AFE). A sub-range can be programmed to
achieve the best resolution for the application. To measure the
angle, only a simple two-pole magnet rotating over the center
of the package is required. The magnet may be placed above
or below the device. The absolute angle measurement provides
an instant indication of the magnet’s angular position. The
AS5170 operates at a supply voltage of 5V, and the supply and
output pins are protected against overvoltage up to +20V. In
addition the supply pins are protected against reverse polarity
up to –20V.
Figure 1:
Typical Arrangement of AS5170A/AS5170B and a Magnet
Ordering Information and Content Guide appear at end of
datasheet.
ams Datasheet
[v1-01] 2016-Apr-11
Page 1
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AS5170 − General Description
Key Benefits and Features
The benefits and features of this device are listed below:
Figure 2:
Added Value of Using AS5170
Benefits
Features
• Resolve small angular excursion with high
accuracy
• 12-bit resolution @90° minimum arc
• Accurate angle measurement
• Low output noise, low inherent INL
• Higher durability and lower system costs (no
shield needed)
• Magnetic stray field immunity
• Enabler for safety critical applications
• Functional safety, diagnostics, dual redundant chip
version
• Suitable for automotive applications
• AEC-Q100 Grade 0 qualified
Applications
The AS5170 is ideal for automotive applications like:
• Brake and gas pedals,
• Throttle valve and tumble flaps,
• Steering angle sensors,
• Chassis ride,
• EGR,
• Fuel-level measurement systems,
• 2/4WD switch, and
• Contactless potentiometers.
Page 2
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ams Datasheet
[v1-01] 2016-Apr-11
AS5170 − General Description
Block Diagram
The functional blocks of the AS5170A and AS5170B are shown
below:
Figure 3:
Functional Blocks of the AS5170A
VDD
Register Setting
LDO
Reverse Polarity Protection
VDD3V3
UART
OTP
Hall Sensors
OUT
Analog
Front-End
ATAN
(CORDIC)
14-bit A/D
Digital Filter
12-bit D/A
Linearizator
Driver
AGC
AS5170A
GND
Figure 4:
Functional Blocks of the AS5170B
VDD
Register Setting
LDO
Reverse Polarity Protection
VDD3V3
UART
OTP
PWM
Hall Sensors
OUT
Analog
Front-end
14-bit A/D
ATAN
(CORDIC)
Digital Filter
Linearizator
Driver
SENT
AGC
AS5170B
GND
ams Datasheet
[v1-01] 2016-Apr-11
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AS5170 − Pin Assignments
Pin Assignments
VDD
1
TP1
2
TP2
3
TP3
4
AS5170A/B
Figure 5:
AS5170A/B Pin Assignment (Top View, SOIC8)
8
GND
7
VDD3V3
6
TP4
5
OUT
Figure 6:
AS5170A/B Pin Description
Pin Number
SOIC-8
Pin
Name
Pin Type
Description
Comments
1
VDD
Supply
Positive supply
Connected to ground
2
TP1
n.a.
Test pin
Connected to ground
3
TP2
n.a.
Test pin
Leave open
4
TP3
n.a.
Test pin
Connected to ground
5
OUT
Analog output (AS5170A)
Digital output (AS5170B)
Output
interface
AS5170A: analog output
AS5170B: PWM or SENT output
6
TP4
n.a.
Test pin
To be connected to OUT
7
VDD
3V3
Supply
8
GND
Supply
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3.3V on-chip low-dropout (LDO)
output. Requires an external
decoupling capacitor (100nF).
Ground
ams Datasheet
[v1-01] 2016-Apr-11
AS5170 − Absolute Maximum Ratings
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. These are stress
ratings only. Functional operation of the device at these or any
other conditions beyond those indicated under Electrical
Characteristics is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device
reliability.
Figure 7:
Absolute Maximum Ratings
Symbol
Parameter
Min
Max
Units
Comments
Electrical Parameters
VDD
DC Supply Voltage at
VDD pin
-20
20
V
Not operational
VOUT
External DC voltage at
OUT pin
-0.3
20
V
Permanent
VDIFF
DC voltage difference
between VDD and OUT
-20
20
DC voltage at the
VDD3V3 pin
-0.3
5.0
V
Input Current (latch-up
immunity)
-100
100
mA
VREGOUT
ISCR
AEC-Q100-004
Continuous Power Dissipation (TAMB = 70°C)
PT
Continuous Power
Dissipation
300
mW
Electrostatic Discharge
ESDHBM
Electrostatic Discharge
HBM
ams Datasheet
[v1-01] 2016-Apr-11
±2
kV
AEC-Q100-002
Page 5
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AS5170 − Absolute Maximum Ratings
Symbol
Parameter
Min
Max
Units
Comments
Temperature Ranges and Storage Conditions
TAMB
Operating Temperature
Range
-40
150
°C
Ambient temperature
TSTRG
Storage Temperature
Range
-55
125
°C
150°C for 1000h
260
°C
The reflow peak soldering temperature
(body temperature) is specified
according to IPC/JEDEC J-STD-020
“Moisture/Reflow Sensitivity
Classification for Non-hermetic Solid
State Surface Mount Devices.” The lead
finish for Pb-free leaded packages is
“Matte Tin” (100% Sn)
85
%
TBODY
Package Body
Temperature
RHNC
Relative Humidity
(non-condensing)
MSL
Moisture Sensitivity
Level
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5
3
Represents a maximum floor life time of
168 hours
ams Datasheet
[v1-01] 2016-Apr-11
AS5170 − Electrical Characteristics
Electrical Characteristics
All tolerances that are defined for external components in this
datasheet, are needed to be assured over the whole operation
conditions range and also over lifetime.
Overall condition: TAMB = -40°C to 150°C, VDD=4.5V to 5.5V;
Components spec; unless otherwise noted.
Figure 8:
Operating Conditions
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
4.5
5.0
5.5
V
3.3
3.45
3.6
V
VDD
Positive supply voltage
VREG
Regulated Voltage
VDD3V3 should not be loaded by
any external DC current
IDD_A
Supply current AS5170A
AGC=255 (no magnet placed)
4
12
mA
lDD_B
Supply current AS5170B
AGC=255 (no magnet placed)
4
10
mA
ISTART
Supply current at start-up
VREG = 2.25V
10
mA
Start-up time
Functional mode
10
ms
Max
Unit
14
bit
12
bit
12
bit
TSUP
2.5
5
Figure 9:
Electrical System Characteristics
Symbol
Parameter
CRES
Core resolution
ARES
Analog resolution (AS5170A)
DRES
Digital resolution (AS5170B)
Conditions
Min
Typ
Range > 90°
INLopt
Integral non-linearity
(optimum)
Best aligned reference magnet(1)
at 25°C over full turn 360°
-0.5
0.5
deg
INLtemp
Integral non-linearity
(optimum)
Best aligned reference magnet(1)
over temperature -40ºC to 150°C
over full turn 360°
-0.9
0.9
deg
INL
Integral non-linearity
Best aligned reference magnet(1)
over temperature -40Cº to150ºC
over full turn 360º and
displacement
-1.4
1.4
deg
ON
Output noise peak to peak
Static conditions - filter on
1
LSB
ST
Sampling time
125
μs
Note(s):
1. Reference magnet: NdFeB, 8 mm diameter, 2.5 mm thickness
ams Datasheet
[v1-01] 2016-Apr-11
Page 7
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AS5170 − Electrical Characteristics
Figure 10:
Power Management - Supply Monitor - Timing
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDDUVTH
VDD undervoltage upper
threshold
3.5
4.0
4.5
V
VDDUVTL
VDD undervoltage lower
threshold
3.0
3.5
4.0
V
VDDUH
VDD undervoltage
hysteresis
300
500
900
mV
UVDT
VDD undervoltage
detection time
Time devices detects
undervoltage
VDD< VDDUVTH
10
50
250
μs
UVRT
Undervoltage recovery time
Time device return into
normal mode from failure
band VDD > VDDUVTH
10
50
250
μs
VDDOVTH
VDD overvoltage upper
threshold
6.0
6.5
7.0
V
VDDOVTL
VDD overvoltage lower
threshold
5.5
6.0
6.5
V
VDDOH
VDD overvoltage hysteresis
300
500
900
V
OVDT
VDD overvoltage detection
time
Time devices detects
overvoltage
VDD> VDDOVTL
500
1000
2000
μs
OVRT
VDD overvoltage recovery
time
Time device return into
normal mode from failure
band VDD < VDDOVTL
500
1000
2000
μs
TDETWD
WatchDog error detection
time
Time device detects
oscillator failure till output
is in failure band
12
ms
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ams Datasheet
[v1-01] 2016-Apr-11
AS5170 − Electrical Characteristics
TAMB = -40°C to 150°C, VDD = 4.5V to 5.5V, unless otherwise
noted.
Two-pole cylindrical diametrically magnetized source:
Figure 11:
Magnetic Characteristics
Symbol
Parameter
Conditions
Min
Bz
Orthogonal magnetic
field strength
Required orthogonal component of
the magnetic field strength
measured at the package surface
along a circle of 1.25 mm
MFER = 0
BzE
Orthogonal magnetic
field strength
–Extended mode
Required orthogonal component of
the magnetic field strength
measured at the package surface
along a circle of 1.25mm
MFER = 1
Disp(1)
Displacement radius
Offset between defined device
center and magnet axis. Dependent
on the selected magnet.
Typ
Max
Unit
30
70
mT
10
90
mT
0.5
mm
Note(s):
1. Reference magnet: NdFeB, 6 mm diameter, 2.5 mm thickness
Figure 12:
Electrical and Timing Characteristics Analog Output (AS5170A)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
INLOS
INL output stage
-6
+6
LSB
DNLOS
DNL output stage
-5
+5
LSB
-0.5%
0.5%
VDD
RERR
Ratiometricity error
BVPU
Output voltage
broken VDD with
pull-up resistor
Pull-up resistor must be in the
specified range (see Figure 31)
96
100
%VDD
BGPD
Output voltage
broken ground with
pull-down resistor
Pull-down resistor must be in the
specified range (see Figure 31)
0
4
%VDD
OSSCG
Output short-circuit
current GND
OUT = GND
5
10
20
mA
OSSCV
Output short-circuit
current VDD
OUT = VDD
-20
-10
-5
mA
OSSDT
Output short-circuit
detection time
OUT = GND or OUT = VDD
20
200
600
μs
ams Datasheet
[v1-01] 2016-Apr-11
Page 9
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AS5170 − Electrical Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
2
5
20
ms
OSSRT
Output short-circuit
recovery time
OLCH
Output level
clamping high
Output current at OUT pin -3 mA
OLCL
Output level
clamping low
Output current at OUT pin 3 mA
4
%VDD
OSPSR
Output stage positive
step response (driver
only)
From 0 to 90%VDD, measured at
OUT pin, with RPUOUT = 4.7kΩ,
CLOAD = 1nF, VDD = 5V
250
μs
OSNSR
Output stage
negative step
response (driver only)
From VDD to 10%VDD, measured at
OUT pin, with RPUOUT = 4.7kΩ,
CLOAD = 1nF, VDD = 5V
250
μs
OSTD
Output stage
temperature drift
Of value at mid code, info parameter
not tested in production
0.2
%
96
%VDD
-0.2
Note(s):
1. For each code the ratiometricity error is defined as follows:
VOUTRATE=((VOUTact – (VOUTtyp*(VDDact/ VDDtyp)))/VDDtyp)*100
Where
- VOUTact is the actual output voltage
- VOUTtyp is the typical output voltage
- VDDact is the actual supply voltage
- VDDtyp is the typical supply voltage
Figure 13:
Electrical and Timing Characteristics PWM Output (AS5170B)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
PWMSSOCG
Short-circuit output
current
OUT = GND
5
10
20
mA
PWMSSOCV
Short-circuit output
current
OUT = VDD
-20
-10
-5
mA
PWMSSDT
PWM short-circuit
detection time
OUT = GND or OUT = VDD
5
PWM
clock
cycles
PWMSSRT
PWM short circuit
recovery time
PWM
clock
cycles
6
BKPWMVOH
PWM output voltage
high in broken
condition
Broken VDD or broken GND,
OUT = high, RPU = 10kΩ or
RPD = 10kΩ
0
0.4
V
BKPWMVOL
PWM output voltage
high in broken
condition
Broken VDD or broken GND,
OUT = low, RPU = 10kΩ or
RPD = 10kΩ
0
0.4
V
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ams Datasheet
[v1-01] 2016-Apr-11
AS5170 − Electrical Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
PWMF7
PWM frequency
PWMFR = 111
112.5
125
137.5
Hz
PWMF6
PWM frequency
PWMFR = 110
180
200
220
Hz
PWMF5
PWM frequency
PWMFR = 101
225
250
275
Hz
PWMF4
PWM frequency
PWMFR = 100
360
400
440
Hz
PWMF3
PWM frequency
PWMFR = 011
450
500
550
Hz
PWMF2
PWM frequency
PWMFR = 010
720
800
880
Hz
PWMF1
PWM frequency
PWMFR = 001
900
100
1100
Hz
PWMF0
PWM frequency
PWMFR = 000
1800
2000
2200
Hz
PWMVOH
PWM output voltage
level high
IOUT = 5 mA,
PWMVOH = VDD - VOUT
0
0.4
V
PWMVOL
PWM output voltage
level high
IOUT = 5 mA
0
0.4
V
PWMSRF
PMM slew rate fast
Between 25% and 75% of
VDD, RPUOUT = 4.7kΩ,
CLOUT1 = 1nF, PWMSR = 0
1
2
4
V/μs
PWMSRS
PMM slew rate slow
Between 25% and 75% of
VDD, RPUOUT = 4.7kΩ,
CLOUT1 = 1nF, PWMSR = 1
0.5
1
2
V/μs
ams Datasheet
[v1-01] 2016-Apr-11
Page 11
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AS5170 − Electrical Characteristics
Timing Characteristics
Figure 14:
Electrical and Timing Characteristics SENT Output (AS5170B)
Symbol
Parameter
SENTSSOC
SENT short-circuit output
current
SENTSSOC
BKSENTVOH
Conditions
Min
Typ
Max
Unit
OUT = 20V
10
20
40
mA
SENT short-circuit output
current
OUT = 0V
-40
-20
-10
mA
SENT output voltage in
broken condition
Broken VDD or broken GND,
RPU = 50kΩ, SENT
constantly high
1.2
V
0
SENTVOH
SENT output voltage
high
SENTVOL
SENT output voltage low
0.5
V
SENTFT
SENT fall time
6.5
μs
SENTRT
SENT rise time
18
μs
4.1
Figure 15:
Electrical and Timing Characteristics UART Interface
Symbol
Parameter
UARTVIH
UART high level input voltage
UARTVIL
UART low level input voltage
UARTVOH
UART high level output voltage
UARTVOH
UART low level output voltage
UARTBRLIM
UART Baud rate
Page 12
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Conditions
Min
Typ
Max
70
%VDD
30
VDD - 0.5V
2400
Unit
%VDD
%VDD
0.5
%VDD
9600
Baud
ams Datasheet
[v1-01] 2016-Apr-11
AS5170 − Detailed Description
Detailed Description
The AS5170 is a Hall-based rotary magnetic position sensor
using a CMOS technology. The lateral Hall sensor array converts
the magnetic field component perpendicular to the surface of
the chip into a voltage.
The signals coming from the Hall sensors are first amplified and
filtered before being converted by the analog-to-digital
converter (ADC). The output of the ADC is processed by the
CORDIC block (Coordinate-Rotation Digital Computer) to
compute the angle and magnitude of the magnetic field vector.
The sensor and analog front-end (AFE) section works in a closed
loop alongside an AGC to compensate for temperature and
magnetic field variations. The calculated magnetic field
strength (MAG), the automatic gain control (AGC) and the angle
can be read through the output pin (OUT) in UART mode.
The magnetic field coordinates provided by the CORDIC block
are fed to a digital filter which reduces noise. A linearization
block generates the transfer function, including linearization.
The AS5170 is available with three different output interfaces:
analog ratiometric (AS5170A), digital PWM or SENT (AS5170B).
The output of the AS5170 can be programmed to define a
starting position (zero angle) and a stop position (maximum
angle). An embedded linearization algorithm allows reducing
the system INL error due, for example, to mechanical
misalignment, magnet imperfections, etc.
The AS5170 can be programmed through the OUT pin with a
UART interface which allows writing an on-chip non-volatile
memory (OTP) where the specific settings are stored. The
AS5170 can be programmed by the ams programming tool,
both at the component and board level.
ams Datasheet
[v1-01] 2016-Apr-11
Page 13
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AS5170 − Register Description
Register Description
Figure 16:
Non-Volatile Memory Register Description
Address
Bit
Position
0x0A
7:0
CUSTID0
Customer ID byte 0
0x0B
7:0
CUSTID1
Customer ID byte 1
0x0C
7:0
CUSTID2
Customer ID byte 2
0x0D
7:0
CUSTID3
Customer ID byte 3
0
PWMINV
PWM inverted
1
PWMSR
PWM slew rate
(0 = PWM slew rate fast PWMSRF,
1 = PWM slew rate slow PWMSRS)
3:2
DIGOS
Digital output stage
(00 = PWM push-pull
01 = PWM pull-down
10 = PWM pull-up
11 = SENT)
It applies to the AS5710B only
6:4
RBKDEB
Read-back debouncing
7
n.a
No use
0
FBS
Failure band selection (0 = lower failure band, 1 = upper
failure band)
2:1
HYST
Hysteresis across the brake point
4:3
QUAD
Quadrant selection
7:5
PWMFR
PWM frequency selection
1:0
PWMRTH
PWM rising threshold tbd
3:2
PWMFTH
PWM falling threshold tbd
7:4
SENTMID
SENT Message ID
4:0
SENTTK
SENT tick
5
SENTESM
Enable SENT serial message
6
SENTPP
SENT pause pulse enable (0 = disable, 1 = enable)
7
SENTRC
SENT rolling counter enable (0 = disable, 1 = enable)
3:0
n.a
No use. Default 0
7:4
n.a
No use. Default 0
Field
0x0E
0x0F
0x10
Description
0x11
0x12
Page 14
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ams Datasheet
[v1-01] 2016-Apr-11
AS5170 − Register Description
Address
Bit
Position
Field
Description
3:0
n.a
No use. Default 0
7:4
n.a
No use. Default 0
CLMPH
Clamping level high
Reg 0x14[0] =LSB
Reg 0x15[3]=MSN
CLMPL
Clamping level low
Reg 0x15[4] =LSB
Reg 0x16[7]=MSN
PPOFFSET
Post processing offset
Reg 0x17[0] =LSB
Reg 0x19[3]=MSB
PPGAIN
Post processing gain
Reg 0x19[4] =LSB
Reg 0x1B[3]=MSB
BP
Break point
Reg 0x1B[5] =LSB
Reg 0x1D[2]=MSB
3
MFER
Magnetic field extended range (1 = Bz, 0= BzE)
4
AER
Angle extended range (set to 1 if the maximum angle
excursion is smaller than 22 degree)
FILTER
Post processing filter
CUSLOCK
Customer settings lock
SIGN
Signature for error correction code
0x13
0x14
7:0
3:0
0x15
7:4
0x16
7:0
0x17
7:0
0x18
7:0
3:0
0x19
7:4
0x1A
7:0
4:0
0x1B
7:5
0x1C
7:0
2:0
0x1D
6:5
7
0x1E
ams Datasheet
[v1-01] 2016-Apr-11
7:0
Page 15
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AS5170 − Register Description
Figure 17:
Volatile Memory Register Description
Address
Bit
Position
0x22
7:0
Field
R/W
R/W
DAC12IN
3:0
R/W
Description
Input word of the 12-bit output DAC
(Reg0x23[3] = MSB, Reg0x22[0] = LSB)
4
DAC12INSEL
R/W
DAC 12 input buffer selection
5
DSPRN
R/W
Digital signal processing reset
6
GLOAD
R/W
Enable of gload
7
-
-
Not used
ANGLECORDIC
R
Angle of the CORDIC output block.
(Reg0x33[5] = MSB, Reg0x32[0] = LSB)
7:6
-
-
Not used
0x34
7:0
MAG
R
CORDIC magnitude
0x35
7:0
AGC
R
AGC value
0x36
7:0
ANGLEFILTER
R
Angle of the digital filter output block
(Reg0x37[3] = MSB, Reg0x36[0] = LSB)
-
-
Not used
0x23
0x32
7:0
5:0
0x33
0x37
3:0
0x37
7:4
Figure 18:
Special Functions
Address
Bit Position
0x60
7:0
0x61
7:0
0x62
7:0
0x63
7:0
Field
P2F
BURNOTP
Page 16
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Description
Pass-to-functions, see UART
Permanently burn OTP, see UART
ams Datasheet
[v1-01] 2016-Apr-11
AS5170 − Register Description
UART Interface
The AS5170 is equipped with a UART interface, which allows
reading and writing the registers as well as permanently
programming the non-volatile memory (OTP). By default
(factory setting) the AS5170 is in the so-called Communication
Mode and the UART is connected at the output pin (OUT). In this
mode, it is possible to configure the register settings. In this
mode, the device is in open-drain mode and therefore a pull-up
resistor has to be connected on the output.
The UART interface allows reading and writing two consecutive
addresses. The standard UART sequence consists of four frames.
Each frame begins with a start bit (START), which is followed by
8 data bits (D[0:7]), one parity bit (PAR), and a stop bit (STOP),
as shown in Figure 19.
Figure 19:
UART Frame
START
D[0]
D[1]
D[2]
D[3]
D[4]
D[5]
D[6]
D[7]
PAR
STOP
The PAR bit is even parity calculated over the data bits (D[0:7]).
Each frame is transferred from LSB to MSB.
The four frames are shown in Figure 20.
Figure 20:
UART Frame Sequence
Frame Number
D[7]
1
2
D[6]
D[5]
D[4]
D[3]
D[2]
D[1]
D[0]
0x55
R/W
ADDRESS
3
DATA1
4
DATA2
The first frame is the synchronization frame and consists of
D[0:7] = 0x55 followed by the parity bit (PAR=0) and the stop
bit. This frame synchronizes the baud rate between the AS5170
and the host microcontroller.
The second frame contains the read/write command (D[7] = 0
Write, D[7] = 1 Read) and the address of the register (D[6:0] =
ADDRESS).
The content of the third and fourth frames (DATA1 and DATA2)
will be written to or read from the location specified by
ADDRESS and ADDRESS+1, respectively.
ams Datasheet
[v1-01] 2016-Apr-11
Page 17
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AS5170 − Register Description
Figure 21 and Figure 22 show examples of read and write.
Figure 21:
Example of Write (Reg[0x22] = 0x18, Reg[0x23] = 0xA2)
0xAA
0x22
0x18
0xA2
PAR
STOP
START
PAR
STOP
START
WRITE
PAR
STOP
START
PAR
STOP
START
START
0 1 0 1 0 1 0 1 0 0 1 0 0 0 1 0 0 0 1 0 0 1 0 0 0 0 1 1 0 0 0 0 1 0 1 0 1 0 0 0 1 0 1 1
Figure 22:
Example of Read (Reg[0x2B], Reg[0x2C])
Content of
register 0x2B
READ
PAR
STOP
START
PAR
STOP
START
START
0 1 0 1 0 1 0 1 0 0 1 0 0 1 0 1 0 1 1 1 1 1 0
Content of
register 0x2C
1 0
1
PAR
STOP
0x2B
PAR
STOP
START
0xAA
Exiting Communication Mode
Communication mode is exited and operational mode is
entered with a Pass-to-function (P2F) command, by writing to
the virtual registers 0x60 and 0x61:
P2F: write(0x60) = 0x70, write(0x61) = 0x51
No more commands can be sent after sending this command,
because the device is permanently placed in operational mode.
Burning the OTP Registers
The BURNOTP command writes the OTP registers with their
programmed values. The command is issued by writing to
virtual registers 0x62 and 0x63:
BURNOTP: write(0x62) = 0x70, write(0x63) = 0x51
Customer ID
A specific identifier chosen by the user can be stored in the
non-volatile memory. This identifier consists of 4 bytes and can
be stored in the locations CUSTID0, CUSTID1, CUSTID2, and
CUSTID3.
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AS5170 − Register Description
Output Linear Transfer Function
A linear transfer function controls the state of the output in
response to the absolute orientation of the external magnet.
The parameters which control this function are shown in
Figure 24.
Figure 23:
Transfer Function Control Parameters
Symbol
Parameter
Resolution [bit]
T1
Mechanical angle starting point
14
T2
Mechanical angle stop point
14
OT1
Output at the starting point (T1)
12
OT2
Output at the stop point (T2)
12
CLMPL
Clamping level low
12
CLMPH
Clamping level high
12
BP
Breakpoint
14
As shown in the Figure 24, the parameters T1, T2, OT1, and OT2
define the input-to-output linear transfer function. The
dedicated programmer for the AS5170 uses the parameters
from Figure 23 to generate the corresponding settings CLMPL,
CLMPHH, PPOFFSET, PPGAIN and BP (see Figure 24).
The clamping level parameters CLMPL and CLMPH define the
absolute minimum and maximum level of the output. Both
clamping levels can be set with the 9 LSBs out of the 12-bit
output resolution. This means that the maximum value for
CLMPL is one eighth, while CLMPH minimum value is
seven-eighths of the output diagnostic. CLMPL and CLMPH
must always be set outside of the lower and upper diagnostic
failure band defined by the output broken wire voltage (see
Figure 24: BGPD and BVPU).
ams Datasheet
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AS5170 − Register Description
Figure 24:
Output Transfer Function
Measured angle
Mechanical range
Max out
Upper failure band
BVPU
Upper clamping band
CLMPH
OT2
OT1
CLMPL
Lower clamping band
BGPD
Lower failure band
Mechanical angle
T1
T2
BP
Electrical range
The breakpoint BP sets the discontinuity point where the
output jumps from one clamping level to the other. It is strongly
recommended to set the breakpoint at the maximum distance
from the start and stop position (T1 and T2). To handle the case
of a full turn, a hysteresis function across the breakpoint can be
used to avoid sudden jumps between the lower and upper
clamping level.
Figure 25:
Hysteresis Setting
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HYST
Hysteresis LSBs
00
0
01
56
10
91
11
137
ams Datasheet
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AS5170 − Register Description
The hysteresis LSB is based on the core resolution (14-bit). The
AS5170 features a programmable digital filter. As shown in
Figure 25 in a static condition (no change of the input), the
static error band is ±0.5 LSB (at 12-bit resolution). Whenever an
input step occurs, the output (measured angle) follows the
input (mechanical angle) entering a certain error band within
the step response time. From the time when the output is within
the static error band the output takes 1000 ms to settle to the
static error band achieving again ±0.5 LSB output noise. The
filter is not usable in 360° range, if the Hysteresis setting is on.
Figure 26:
Step Response
Measured Angle
Dynamic
Error Band
Static Error Band
Input
Output
response
Static Error Band
Sampling
Frequency
time
Step Response
Time
1000ms
Figure 27:
FILTER Setting
FILTER
Dynamic Error Band [LSB]
Step Response
Time [µs]
00
Filter off
Not applicable
01
23
5 CORDIC cycles
The FBS setting allows selecting the failure band (lower or
upper) when the output goes into diagnostic mode.
Multiple Quadrants
The multiple quadrants option allows repeating the same
output control parameters up to 4 times over the full turn
rotation as shown in the Figure 29, Figure 30, and Figure 31. The
QUAD parameter sets the number of quadrants, as shown in the
Figure 28.
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AS5170 − Register Description
Figure 28:
Number of Quadrants
QUADEN
Number of Quadrants
00
Single
01
Double
10
Triple
11
Quadruple
Figure 29:
Dual Quadrant Mode
Measured angle
Max out
BVPU
CLMPH
Upper failure band
Upper clamping band
CLMPL
Lower clamping band
BGPD
Lower failure band
360
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AS5170 − Register Description
Figure 30:
Triple Quadrant Mode
Measured angle
Max out
BVPU
CLMPH
Upper failure band
Upper clamping band
CLMPL
Lower clamping band
BGPD
Lower failure band
360
Figure 31:
Quadruple Quadrant Mode
Measured angle
Max out
BVPU
CLMPH
Upper failure band
Upper clamping band
CLMPL
Lower clamping band
BGPD
Lower failure band
360
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AS5170 − Register Description
Extended Magnetic Input Range
The magnetic input field range can be boosted with the MFER
bit. The extended magnetic field allows increasing the
maximum air gap between the AS5170 and the magnet.
More information can be found in the Application Note.
Analog Output (AS5170A)
The AS5170A provides a linear analog ratiometric output signal.
The output buffer features a push-pull analog output stage
which can be loaded with a pull-down or a pull-up resistor. The
output voltage represents the angular orientation of the
magnet above the AS5170A on a linear absolute scale and is
ratiometric to VDD.
PWM Output (AS5170B)
The AS5170B has a PWM output. With the DIGOS setting, the
PWM output stage can be programmed as a push-pull,
pull-down, or pull-up driver. The duty-cycle of each pulse is
proportional to the absolute anglar position of the external
magnet.
The PWM signal consists of a frame of 4096 clock periods as
shown in Figure 32. The PWM frame begins with a certain
number of clocks high, defined by the CLMPL, which is followed
by the electrical angle information. The frame ends with a
certain number of clock pulses low, as defined by the CLMPH.
It is possible to invert the frame using the PWMINV setting.
Figure 32:
Pulse Width Modulation Frame
n
1
2
3
4
5
PWM period
Mechanical angle
CMPL
Electrical angle
CMPH
The PWMFR setting sets the duration of the PWM frequency.
The PWMSR setting chooses between fast and slow steps.
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AS5170 − Register Description
SENT Output (AS5170B)
The AS5170B provides a SENT-compatible output (Single Edge
Nibble Transmission) interface which is compliant with the
SAE-J2716 standard (Jan-2010) and features the Single Secure
Sensor and the Single Sensor protocol (refer to SENT_J2716_
Standard - Appendix A.3 and A.4). SENT is a single-wire interface
based on a unidirectional communication scheme from the
sensor (transmitter) to the engine control unit (receiver). The
sensor constantly transmits data to the receiver.
The SENT interface can be enabled on the AS5170B with the
DIGOS setting.
The SENT frame consists of 8 nibbles in which each nibble is
made up by 4 bits. The duration of the nibbles is variable and
depends on its content and tick frequency. With the AS5170B,
the tick frequency is selected by the SENTTK setting, as shown
in Figure 33.
Figure 33:
SENT Tick Period
ams Datasheet
[v1-01] 2016-Apr-11
SENTTK
SENT Tick Period (µs)
00000
3
00001
4
00010
4.5
00011
5
00100
5.5
00101
5.75
00110
6.5
00111
6.75
01000
7.5
01001
8
01010
8.5
01011
9
01100
9.5
01101
10
01110
10.25
01111
10.5
10000
10.75
10001
11
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AS5170 − Register Description
SENTTK
SENT Tick Period (µs)
10010
11.25
10011
11.5
10100
11.75
10101
12
10110
12.25
10111
12.5
11000
2.25
11001
2.5
11010
2.75
11011
3
11100
3.25
11101
3.5
11110
3.5
11111
3.5
The nibble protocol consists of:
• 5 clock ticks low
• 7 clock ticks + n clock ticks high
Where n is the decimal representation of the 4 bit data. If the
nibble data is zero (data = 0x00, n = 0) the nibble duration is 12
ticks, while if the nibble data is 15 (data = 0xFF, n = 15) its
duration is 27 ticks.
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AS5170 − Register Description
Figure 34:
PWM Clock Period and Frequency
nibble = 0
5 ticks
7 ticks
nibble = 15
5 ticks
22 ticks
The SENT protocol consists of a 56-tick synchronization pulse
followed by 8 nibbles. Each nibble is described in Figure 35.
Figure 35:
Nibble Description
Nibble
ams Datasheet
[v1-01] 2016-Apr-11
Description
1
Status and communication
2
Angle data most significant nibble
3
Angle data middle significant nibble
4
Angle data least significant nibble
5
Rolling counter most significant nibble
6
Rolling counter least significant nibble
7
Inverted nibble #2
8
CRC checksum
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AS5170 − Register Description
The Status and Communication nibble includes diagnostic
status and the Short Serial Message Format, as defined in the
SAE J2716 protocol.
Figure 36:
Status and Communication Nibble
Bit
Description
0
Error bit: 0 = no sensor error, 1 = sensor error
1
0 (always)
2
Short Serial Message
3
Message Start
The Short Serial Message is transmitted one bit per SENT frame
in bit 2 of consecutive frames and consists of 16 bits. The
starting bit of a Short Serial Message is indicated by a 1 in bit 3
(Message Start) of the Status and Communication Nibble.
Figure 37:
Serial Message
SENT Message Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Message Start
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Short Serial Message[2]
SENTMID
MAG
CRC
The Short Serial Message consists of a message ID (SENTMID)
and the magnitude of the magnetic field (MAG). The Short Serial
Message is protected by a 4-bit CRC.
The SENTESM bit enables the Short Serial Message, which is
otherwise by default disabled.
The angular information is contained in nibbles 2, 3 and 4.
Nibbles 5 and 6 contain a rolling counter which counts the
number of sent telegrams and rolls over to 0 after reaching the
maximum value of 255. The rolling counter can be disabled,
which is not needed in the Single Sensor mode, with the SENTRC
bit.
Because the tick clock period is 3 μs, the minimum duration of
a SENT telegram is 456 μs, while the maximum duration is 816
μs. the SENTPP bit enables the Pause Pulse, which creates a SENT
transmission with a constant duration of 272 ticks.
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AS5170 − Register Description
Diagnostic
AS5170A/AS5170B can be used in safety critical applications.
For this reason,AS5170A/AS5170B is developed as SEooC
(Safety element out of context) according the ISO26262.
The assumption of use (AoU) and the robust embedded
self-diagnostic, to achieve a high ASIL level in the application.
For additional information regarding the ISO26262 flow at ams
and the SEooC relevant documents (e.g. FMEDA, safety manual,)
please contact the ams technical support for magnetic position
sensors.
Figure 38:
Diagnostic Table
SM
Safety Mechanism
SM1
Watchdog failure
No, if a watchdog error is detected, the
sensor provides the error information
till a sensor reset happens
Output is going into HIZ -->
failure band (depending on
output resistor)
SM2
Offset compensation
not complete
Yes, if the offset is below the specified
threshold, sensor recovers the output
Output is forced in failure band.
Depending on FBS setting
SM3
CORDIC overflow
Yes, if the magnetic input field is below
the specified threshold, sensor
recovers the output
Output is forced in failure band.
Depending on FBS setting
SM4
Magnetic input field
too high/too low
Yes, if the magnetic field is inside the
specific range, after the recovery time
the sensor leave the failure
Output is forced in failure band.
Depending on FBS setting
SM5
Vreg undervoltage
Yes
Hi-z: Failure band related to the
out load
SM6
Reverse polarity
Yes, if reverse polarity issue is solved.
No direct safety mechanism, it’s a
protection!
Hi-z: Failure band related to the
out load
SM7
VDD overvoltage
Yes, if the VDD is below the specified
threshold.
Hi-z: Failure band related to the
out load
SM8
VDD undervoltage
Yes, if the VDD is above the specified
threshold
Hi-z: Failure band related to the
out load
SM9
Broken VDD
Yes
Hi-z: Failure band related to the
out load
SM10
ADC check
No, sensor stays in failure band till the
Sensor is resetting.
Hi-z: Failure band related to the
out load
SM11
Analog read fail
Yes
Hi-z: Failure band related to the
out load
SM12
Short circuit
Yes
Hi-z: Failure band related to the
out load
ams Datasheet
[v1-01] 2016-Apr-11
Recoverable
Safe State
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AS5170 − Register Description
SM
Safety Mechanism
Recoverable
Safe State
SM13
Signature
No, sensor stays in failure band till the
sensor is resetting
Hi-z: Failure band related to the
out load
SM14
Broken GND
Yes
Hi-z: Failure band related to the
out load
The FBS setting allows selecting the failure band (lower or
upper) when the output goes into diagnostic mode.
Diagnostic Explanations
For a detailed explanation of the diagnostic and the SPFM
please contact the ams application team for magnetic position
sensor.
Analog Read Fail (SM11)
This safety mechanism operates differently for AS5170A
(analog) and AS5170B (digital):
• For AS5170B readout failure: After a falling edge there
must be a rising edge after a defined time.
In case this is not respected output driver is kept in high
impedance. After a certain time this condition is checked
again.
The readout mechanism for AS5170B is defined by PWMRTH
and PWMFTH, which set the maximum timeout period to wait
for a falling/rising before triggering an error condition,
according to the figures below.
Figure 39:
PWMRTH Conditions
PWMRTH
Delay (μs)
0
0
PWM Read Back rise disabled
0
1
24-28
1
0
56-60
1
1
112-120
Figure 40:
PWMFTH Conditions
PWMFTH
Delay (μs)
0
0
PWM Read Back fall disabled
0
1
24-28
1
0
56-60
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AS5170 − Register Description
PWMFTH
1
Delay (μs)
1
112-120
• For AS5170A readout failure: Comparison of the analog
output information versus the digital information of the
sensor. If the difference is too high output driver is kept in
high impedance. After a certain time this condition is
checked again.
The readout mechanism for AS5170A is defined by RDBCKDEB,
which set the maximum timeout period to wait before
triggering an error condition, according to the tables below.
Figure 41:
AS5170A Readout Mechanisms
RDBCKDEB02
RDBCKDEB01
RDBCKDEB00
CORDIC
Cycles(1)
Note
0
0
0
0
Analog Read Back disabled
0
0
1
1
0
1
0
2
0
1
1
4
1
0
0
8
1
0
1
16
1
1
0
32
1
1
1
64
Note(s):
1. 1 CORDIC cycle typ.:111μs
ams Datasheet
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AS5170 − Application Information
Application Information
Signature Calculation
The OTP of AS5170A and AS5170B uses a BIST technique with
Multiple Input Signature Register circuits.
To activate this BIST a calculation of the Signature Byte is
necessary and has to store into the OTP during the
programming sequence.
For calculating the signature byte the content of the whole
memory (0x02 to 0x1D) has to be read.
Out of this information the following calculation has to be done.
Byte: 0x02 = data2
….
Byte: 0x1D = data29
Unsigned int signature (unsigned int * content)
{
unsigned int misr,misr_shift,misr_xor,misr_msb;
misr = 0;
for (int i=0; i<28; i++) {
misr_shift = (misr<<1);
misr_xor = (misr_shift ^ content[i])%256;
misr_msb = misr/(128);
if (misr_msb == 0)
misr = misr_xor;
else
misr = (misr_xor ^ 29)%256;
}
return misr;
}
content= {,data2,data3,data4,data5,data6,
data7,data8,data9,data10,data11,
data12,data13,data14,data15,data16,
data17,data18,data19,data20,data21,data22,
data23,data24,data25,data26,data27,data28,data29};
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AS5170 − Application Information
Programming Parameter
The programming has to be performed in communication
mode. If the cust_lock=0, the sensor starts in communication
mode.
The following procedure and the block diagram are showing
the common 2 point calibration. For special calibration
procedure:
AS5170A: Analog output driver calibration
AS5170A/AS5170B: Linearization.
Please go in contact with the ams application team.
Burn and Verification of the OTP Memory
1.
Power on cycle
2. Move magnet to the first mechanical start position
3. Reset the DSP. Writing 0x20 into Reg(0x0023)
4. Read out the measured angle from ANGLECORDIC
register: T1 Value
5. Moving of magnet to the second mechanical position
(stop position)
6. Read out the measured angle from ANGLECORDIC
register: T2 Value
7. Write T1,T2 and all other transfer parameter into the
DLL: Calculation of GAIN, Offset, BP, Clamping
8. Write reg(0x000A) to reg (0x001E) with the custom
settings and the calculated values from point 7. -->
AS5170A/B Settings
9. Read reg(0x000A) to reg (0x001E) ---> Read register
step 1
10. Comparison of AS5170A/B settings with content of read
register step 1
11. If point 10 is correct: Decision: pass 2 function
(measurement verification) or programming.
Programming sequence starts with point 12.
12. Write reg(0x000A) to reg (0x001E) with the custom
settings and the calculated values from point 7 +
customer lock Bit. --> AS5170A/B Settings_Prog
13. Read reg(0x0000) to reg (0x001D) ---> Read register
step 2
14. Calculation of Signature Byte out of Read register step
2 content: Signature Byte
15. Write 8Bit Signature to reg(0x001E)
16. Write reg(0x000A) to reg (0x001E) with the custom
settings and the calculated values from point 7 +
customer lock Bit + Signature byte. --> AS5170 Settings_
Prog_final
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AS5170 − Application Information
17. Read reg(0x000A) to reg (0x001E) ---> Read register
step 3
18. Comparison of AS5170A/B Settings_Prog_final with
content of read register step 3
19. If point 18 is correct, start the OTP burn procedure by
writing: Reg(0x0062)=0x70 and Reg(0x0063)=0x51
20. Programming procedure is complete after 10ms
21. Clear the memory content writing 0x00 into reg
(0x001E)
22. Write Reg0x23=0x40 to set the threshold for the guard
band test (1)
23. 5ms wait time to refresh the non-volatile memory
content with the OTP content
24. Read reg(0x000A) to reg (0x001E) ---> Read register
step 4
25. If content from reg (0x001E) compares with content
from “Signature Byte” refresh was successful
26. Comparison of AS5170A/B Settings_Prog_final with
content of read register step 4. Mandatory: guard band
test (1).
27. If point 26 fails, the test with the guard band (1) was not
successful and the device is incorrectly programmed. A
reprogramming is not allowed.
28. Clear the memory content writing 0x00 into reg
(0x001E)
29. Write Reg0x23=0x00to set the threshold for the guard
band test (1)
30. 5ms wait time to refresh the non-volatile memory
content with the OTP content
31. Read reg(0x000A) to reg (0x001E) ---> Read register
step 5
32. If content from reg (0x001E) compares with content
from “Signature Byte” refresh was successful
33. Comparison of AS5170A/B Settings_Prog_final with
content of read register step 5. Mandatory: guard band
test (1)
34. If point 33 fails, the test with the guard band (1) was not
successful and the device is incorrectly programmed.
A reprogramming is not allowed.
35. Reset of the device. After power on the Sensor starts in
functional mode
Note(s):
1. Guard band test:
Restricted to temperature range: 25 °C ± 20 °C
Right after the programming procedure (max. 1 hour with same
Conditions 25°C ± 20 °C)
Same VDD voltage
The guard band test is only for the verification of the burned OTP fuses during
the programming sequence.
A use of the guard band in other cases is not allowed.
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AS5170 − Application Information
Figure 42:
OTP Memory Burn and Verification Flowchart
Start
Write
Reg(0x0062) = 0x70
Reg(0x0063) =0x51
Move to mechanical
start position
Wait 10ms
Reset DSP
Write reg
(0x0023) = 0x10
Write
Reg0x1E= 0x00
Write 0x00 into signature
byte
Read Cordic Value 1
14 Bit value
Read
Reg 0x33[5]=MSB
Reg 0x32[0]=LSB
Write
Reg0x23= 0x40
Set Guardband 1
Move to mechanical
end position
Wait 5ms
Reset DSP
Write reg
(0x0023) = 0x10
Read
Reg 0x0A
To
Reg 0x1E
Read Cordic Value 2
14 Bit value
Read
Reg 0x33[5]=MSB
Reg 0x32[0]=LSB
Reg 0x1F = 0x00
Power on cycle
Start OTP burning procedure
correct
Read register Step 3
Read content of signature
byte
Not correct
DLL Calculation for Gain;
Offset; BP; Clamping
Write parameter
into DLL and
calculate the OTP
values
Verify 3
Not correct
Comparison of written content
(Content A) with content of
Read Register Step 3
Mandatory Guardband Test
correct
AS5170A/B Settings
Write Reg 0x0A
to
Write Reg 0x1E
Read Registers Step 1
Read
Reg 0x0A
To
Reg 0x1E
Comparison of written
content (Reg 0x0A to Reg
0x1E) with content of Read
Register Step 1
Verify 1
Programming or
Pass2Function
Programming
Pass2Function
Guardbandtest fails.
Wrong programming
Reprogramming not allowed
Write
Reg0x1E= 0x00
Write
Reg0x23= 0x00
Not correct
RESET
Wait 5ms
Write 0x00 into signature
byte
Set Guardband 2
correct
correct
correct
Read
Reg 0x0A
To
Reg 0x1E
Read register Step 4
pass2function
Measurement
Verification
Read content of signature
byte
Reg 0x1E = 0x00
Programming
Not correct
Verify 5
Not correct
Comparison of written content
(Content A) with content of Read
Register Step 4
MANDATORY GUARDBAND-TEST
correct
Write customer content +
customer lock Bit
ams Datasheet
[v1-01] 2016-Apr-11
Write Reg 0x0A
to
Write Reg 0x1E
Reading of full OTP content
(customer area and ams
area)
Read
Reg 0x00
To
Reg 0x1D
Signature Byte calculation
Calculate Signature
8 Bit Signature Byte
Write
Reg 0x1E
Writing again the full
customer area content +
signature byte (Content A)
Write
Reg 0x0A
To
Reg 0x1E
Read Registers Step 2
Read
Reg 0x0A
To
Reg 0x1E
Comparison of written
content (Content A) with
content of Read Register
Step 2
Verify 2
Reset
Guardbandtest fails.
Wrong programming
Reprogramming not allowed
END
Correct: Device in
functional mode
Not correct
Reset
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AS5170 − Application Information
SOIC8
Figure 43:
Application with Pull-Down Load Resistor (SOIC-8)
Sensor PCB
ECU
VDD
R1*
VDD
TP4
VDD3V3
OUT
RLPU
R 2*
OUT
AS5170
C1
C4*
C2
TP1
TP3
TP2
GND
CL
C3
GND
Figure 44:
Application with Pull-Up Load Resistor (SOIC-8)
Sensor PCB
ECU
VDD
R1*
VDD
TP4
VDD3V3
OUT
R 2*
OUT
AS5170
C1
C4*
C2
TP1
TP3
TP2
GND
CL
C3
RLPD
GND
Figure 43 and Figure 44 show the recommended schematic in
the application. All components marked with (*) are optional
and can be used to further increase the EMC.
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ams Datasheet
[v1-01] 2016-Apr-11
AS5170 − Application Information
External Components
Figure 45:
Recommended External Components for AS5170A
Component
Symbol
Min
Typ
Max
Unit
VDD buffer capacitor
C1
80
100
120
nF
VDD3V3 regulator capacitor
C2
80
100
120
nF
OUT load capacitor (sensor PCB)
C3
0
4.7
nF
VDD capacitor (optional)
C4*
4.7
nF
VDD serial resistor (optional)
R1*
10
Ω
OUT load capacitor (ECU)
CL
OUT serial resistor (optional)
R2*
OUT pull-up resistance
RLPU
4
10
kΩ
OUT pull-down resistance
RLPD
4
10
kΩ
0
20
Notes
Do not increase due to
programming over output.
nF
Ω
50
Figure 46:
Recommended External Components for AS5170B with PWM Output
Component
Symbol
Min
Typ
Max
Unit
VDD buffer capacitor
C1
80
100
120
nF
VDD3V3 regulator capacitor
C2
80
100
120
nF
OUT load capacitor (sensor PCB)
C3
0
4.7
nF
VDD capacitor (optional)
C4*
4.7
nF
VDD serial resistor (optional)
R1*
10
Ω
OUT load capacitor (ECU)
CL
OUT serial resistor (optional)
R2*
OUT pull-up resistance
RLPU
1
10
kΩ
OUT pull-down resistance
RLPD
1
10
kΩ
ams Datasheet
[v1-01] 2016-Apr-11
0
20
Notes
Do not increase due to
programming over output.
nF
Ω
50
Page 37
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AS5170 − Application Information
Figure 47:
Recommended External Components for the AS5170B with SENT Output
Component
Symbol
Min
Typ
Max
Unit
VDD buffer capacitor
C1
0.8
1
1.2
μF
VDD3V3 regulator capacitor
C2
80
100
120
nF
OUT load capacitor (sensor PCB)
C3
0
4.7
nF
VDD capacitor (optional)
C4*
4.7
nF
VDD serial resistor (optional)
R1*
10
kΩ
OUT load capacitor (ECU)
CL
OUT serial resistor (optional)
R2*
OUT pull-up resistance
RLPU
10
50
kΩ
OUT pull-down resistance
RLPD
10
50
kΩ
Page 38
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0
20
50
Notes
Do not increase due to
programming over output.
nF
kΩ
ams Datasheet
[v1-01] 2016-Apr-11
AS5170 − Application Information
Mechanical Data
The internal Hall elements are placed in the center of the
package on a circle with a radius of 1.25mm.
Figure 48:
Hall Element Positions
Note(s) and/or Footnote(s):
1. All dimensions in mm.
2. Die thickness 356μm nom.
3. Adhesive thickness 2 0 ± 10μm.
4. Lead frame downest 200 ± 25μm.
5. Lead frame thickness 200 ± 8μm.
ams Datasheet
[v1-01] 2016-Apr-11
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AS5170 − Pack age Drawings & Mark ings
Package Drawings & Markings
Figure 49:
Packaging Outline Drawing (SOIC-8)
RoHS
Green
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ams Datasheet
[v1-01] 2016-Apr-11
AS5170 − Package Drawings & Markings
Figure 50:
Package Marking AS5170 - SOIC8
YYWWRZZ
AS5170B
YYWWRZZ
AS5170A
@
@
Figure 51:
Packaging Code YYWWRZZ@
YY
Last two digits of the
manufacturing year
ams Datasheet
[v1-01] 2016-Apr-11
WW
Manufacturing week
R
Plant identifier
ZZ
Free choice/
traceability code
@
Sublot identifier
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AS5170 − Ordering & Contac t Information
Ordering & Contact Information
Figure 52:
Ordering Information
Ordering Code
Package
Marking
Delivery Form
Delivery Quantity
AS5170A-HSOT
SOIC8
AS5170A
13” Tape&Reel in dry pack
2500
AS5170A-HSOM
SOIC8
AS5170A
7” Tape&Reel in dry pack
500
AS5170B-HSOT
SOIC8
AS5170B
13” Tape&Reel in dry pack
2500
AS5170B-HSOM
SOIC8
AS5170B
7” Tape&Reel in dry pack
500
Buy our products or get free samples online at:
www.ams.com/ICdirect
Technical Support is available at:
www.ams.com/Technical-Support
Provide feedback about this document at:
www.ams.com/Document-Feedback
For further information and requests, e-mail us at:
[email protected]
For sales offices, distributors and representatives, please visit:
www.ams.com/contact
Headquarters
ams AG
Tobelbaderstrasse 30
8141 Premstaetten
Austria, Europe
Tel: +43 (0) 3136 500 0
Website: www.ams.com
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ams Datasheet
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AS5170 − RoHS Compliant & ams Green Statement
RoHS Compliant & ams Green
Statement
RoHS: The term RoHS compliant means that ams AG products
fully comply with current RoHS directives. Our semiconductor
products do not contain any chemicals for all 6 substance
categories, including the requirement that lead not exceed
0.1% by weight in homogeneous materials. Where designed to
be soldered at high temperatures, RoHS compliant products are
suitable for use in specified lead-free processes.
ams Green (RoHS compliant and no Sb/Br): ams Green
defines that in addition to RoHS compliance, our products are
free of Bromine (Br) and Antimony (Sb) based flame retardants
(Br or Sb do not exceed 0.1% by weight in homogeneous
material).
Important Information: The information provided in this
statement represents ams AG knowledge and belief as of the
date that it is provided. ams AG bases its knowledge and belief
on information provided by third parties, and makes no
representation or warranty as to the accuracy of such
information. Efforts are underway to better integrate
information from third parties. ams AG has taken and continues
to take reasonable steps to provide representative and accurate
information but may not have conducted destructive testing or
chemical analysis on incoming materials and chemicals. ams AG
and ams AG suppliers consider certain information to be
proprietary, and thus CAS numbers and other limited
information may not be available for release.
ams Datasheet
[v1-01] 2016-Apr-11
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AS5170 − Copyrights & Disclaimer
Copyrights & Disclaimer
Copyright ams AG, Tobelbader Strasse 30, 8141 Premstaetten,
Austria-Europe. Trademarks Registered. All rights reserved. The
material herein may not be reproduced, adapted, merged,
translated, stored, or used without the prior written consent of
the copyright owner.
Devices sold by ams AG are covered by the warranty and patent
indemnification provisions appearing in its General Terms of
Trade. ams AG makes no warranty, express, statutory, implied,
or by description regarding the information set forth herein.
ams AG reserves the right to change specifications and prices
at any time and without notice. Therefore, prior to designing
this product into a system, it is necessary to check with ams AG
for current information. This product is intended for use in
commercial applications. Applications requiring extended
temperature range, unusual environmental requirements, or
high reliability applications, such as military, medical
life-support or life-sustaining equipment are specifically not
recommended without additional processing by ams AG for
each application. This product is provided by ams AG “AS IS”
and any express or implied warranties, including, but not
limited to the implied warranties of merchantability and fitness
for a particular purpose are disclaimed.
ams AG shall not be liable to recipient or any third party for any
damages, including but not limited to personal injury, property
damage, loss of profits, loss of use, interruption of business or
indirect, special, incidental or consequential damages, of any
kind, in connection with or arising out of the furnishing,
performance or use of the technical data herein. No obligation
or liability to recipient or any third party shall arise or flow out
of ams AG rendering of technical or other services.
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ams Datasheet
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AS5170 − Document Status
Document Status
Document Status
Product Preview
Preliminary Datasheet
Datasheet
Datasheet (discontinued)
ams Datasheet
[v1-01] 2016-Apr-11
Product Status
Definition
Pre-Development
Information in this datasheet is based on product ideas in
the planning phase of development. All specifications are
design goals without any warranty and are subject to
change without notice
Pre-Production
Information in this datasheet is based on products in the
design, validation or qualification phase of development.
The performance and parameters shown in this document
are preliminary without any warranty and are subject to
change without notice
Production
Information in this datasheet is based on products in
ramp-up to full production or full production which
conform to specifications in accordance with the terms of
ams AG standard warranty as given in the General Terms of
Trade
Discontinued
Information in this datasheet is based on products which
conform to specifications in accordance with the terms of
ams AG standard warranty as given in the General Terms of
Trade, but these products have been superseded and
should not be used for new designs
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AS5170 − Revision Information
Revision Information
Changes from 0-04 (2016-Apr-06) to current revision 1-01 (2016-Apr-11)
Page
0-04 (2016-Apr-06) to 1-00 (2016-Apr-07)
Added Figure 1
1
Added Mechanical Data section
39
1-00 (2016-Apr-07) to 1-01 (2016-Apr-11)
Updated Figure 7
5
Note(s):
1. Page and figure numbers for the previous version may differ from page and figure numbers in the current revision.
2. Correction of typographical errors is not explicitly mentioned.
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ams Datasheet
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AS5170 − Content Guide
Content Guide
ams Datasheet
[v1-01] 2016-Apr-11
1
2
2
3
General Description
Key Benefits and Features
Applications
Block Diagram
4
5
Pin Assignments
Absolute Maximum Ratings
7
12
Electrical Characteristics
Timing Characteristics
13
Detailed Description
14
17
18
18
18
19
21
24
24
24
25
29
30
30
Register Description
UART Interface
Exiting Communication Mode
Burning the OTP Registers
Customer ID
Output Linear Transfer Function
Multiple Quadrants
Extended Magnetic Input Range
Analog Output (AS5170A)
PWM Output (AS5170B)
SENT Output (AS5170B)
Diagnostic
Diagnostic Explanations
Analog Read Fail (SM11)
32
32
33
33
36
37
39
Application Information
Signature Calculation
Programming Parameter
Burn and Verification of the OTP Memory
SOIC8
External Components
Mechanical Data
40
42
43
44
45
46
Package Drawings & Markings
Ordering & Contact Information
RoHS Compliant & ams Green Statement
Copyrights & Disclaimer
Document Status
Revision Information
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