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AS5403A/D/E
3D Hall Position Sensor for Linear and
Off-Axis Applications
General Description
The AS5403 can measure magnetic fields components in all
three dimensions and converts the magnetic field information
into absolute position information.
Only a simple 2-pole magnet is required as the magnetic field
source.
Using two 3D-Hall cells allows absolute (single pixel) as well as
differential (double pixel) 3D magnetic field measurement.
The differential measurement makes the AS5403 ideal for use
in rough automotive position sensing applications that include
not only dust, dirt or moisture but also unwanted magnetic
stray fields.
All the signal conditioning, including compensation of
temperature effects as well as linearization of the output is
included in the IC.
The absolute position information of the magnet is directly
accessible over a SPI interface and a programmable PWM or
analog output. The build in diagnostic functions makes the
AS5403 suitable for safety critical applications.
The AS5403 is available in a 14-pin TSSOP package and is
qualified according AEC-Q100 for an ambient temperature
range from -40°C to 150°C. It operates at a supply voltage of 5V
±10%.
The programming of the AS5403 is done over the single wire
UART interface.
The AS5403 is overvoltage protected up to 18V on the supply
and output pins. In addition the supply pins are reverse polarity
protected up to -18V.
Ordering Information and Content Guide appear at end of
datasheet.
ams Datasheet
[v1-06] 2015-Aug-28
Page 1
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AS5403A/D/E − General Description
Key Benefits & Features
The benefits and features of AS5403A/D/E, 3D Hall Position
Sensor for Linear and Off-Axis Applications are listed below:
Figure 1:
Added Value of Using AS5403A/D/E
Benefits
Features
High flexibility in magnet selection
High magnetic input range
Suppression against magnetic stray fields
Dual 3D pixel principle
Suitable for high temperature applications
Temperature range from -40 to 150°C (ambient)
Flexibility in choice of interface
Analog or PWM output, SPI as alternative
Best in class performance parameters
Offset and sensitivity accuracy over temperature
Flexible mechanical arrangement of magnet
Flexible configuration registers
External calculations of raw data
3D raw data assessment possible
High linearity after teaching
33 linearization points
Supporting safety critical applications
Integrated diagnostic functions
Applications
Linear position:
• Clutch/brake pedal
• Gearbox sensor
Off-Axis:
• Steering angle sensor
• Gearbox shift link
Page 2
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ams Datasheet
[v1-06] 2015-Aug-28
AS5403A/D/E − General Description
Figure 2:
Typical Set-Up of AS5403A/D With Magnet (Linear)
Figure 3:
Typical Set-Up of AS5403E With Magnet (Off-Axis)
ams Datasheet
[v1-06] 2015-Aug-28
Page 3
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AS5403A/D/E − General Description
Block Diagram
The functional blocks of this device for reference are
shown below:
Figure 4:
AS5403A/D/E Block Diagram
VDD3V
AS5403
Temperature
Sensor
Diagnostics
SPI
VDD
LDO
SCS
SCLK
SDO
SDI
E²PROM
3DHall
Cell
#0
3DHall
Cell
#1
X
Y
Z
M
U
X
ADC
signal
conditioning
X
Bi
Bj
Linearization
ATAN
and
(CORDIC) Output setting
DAC
OUT
PWM
Y
Z
DSW
GND
3D Hall pixels:
The AS5403 contains two 3D Hall pixels, spaced 2.5mm apart.
MUX:
The multiplexer pre-selects depending on the AS5403 variant and chosen mode
two/four magnetic components.
ADC:
The Sigma-Delta ADC samples the Hall sensors signals selected by the MUX. The
sampling of the sensors is done sequentially.
Signal conditioning:
This block includes offset and temperature compensation as well as amplitude
matching.
Bi/Bj:
Preparation of the input signal for the ATAN calculation. Inversion and offset
adjustment functions.
ATAN:
Angle calculation.
Linearization:
A 33-point linearization of the ATAN output. In addition output settings for gain an
clamping.
Temperature:
An on-chip temperature sensor is available. It can be read over the SPI interface. This
sensor is also used for signal conditioning
PWM interface:
The linearized measurement data is available over a single pin in the form of a pulse
width modulated (PWM) signal.
SPI interface:
A bi-directional SPI interface allows communication with the chip, including reading
measurement data, E²PROM contents or writing configuration data.
E²PROM:
The on-chip E²PROM contains the configuration data of the chip.
Diagnostics:
Monitor functions on different blocks to check the correctness of the internal signals.
Page 4
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ams Datasheet
[v1-06] 2015-Aug-28
AS5403A/D/E − Pin Assignments
Pin Assignments
Figure 5:
AS5403 Pin Configuration
AS5403 Pin Configuration, TSSOP-14
Package (Top View): X indicates the axis
of lateral position measurement; z axis is
perpendicular to the package surface
1
14
DSW
SCS
2
13
OUT
SCLK
3
12
GND
SDI
4
11
VDD3
SDO
5
10
VDD
TEST
6
NC
7
AS5403x
Y
X
ams Datasheet
[v1-06] 2015-Aug-28
TEST
9
NC
8
NC
Page 5
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AS5403A/D/E − Pin Assignments
Figure 6:
Pin Description
Pin
Symbol
Type
Description
1
TEST
DI_PD
Test pin connect to GND on PCB
2
SCS
DI_PD
SPI chip select (active high), connect to GND if not used in
application
3
SCLK
DI_PD
SPI clock, connect to GND if not used in application
4
SDI
DI_PD
SPI input data line, connect to GND if not used in application
5
SDO
DO
SPI output data line, leave open if not used in application
6
TEST
DO
leave open on PCB
7
NC
Not connected, Set to GND in application
8
NC
Not connected, Set to GND in application
9
NC
Not connected, Set to GND in application
10
VDD
S
11
VDD3
AIO
12
GND
S
13
OUT
AIO
Analog/PWM Output, programming option over output.
14
DSW
AIO
Programmable digital switch output
Supply Voltage 5 V
Regulator output
Ground
PIN Types:
Page 6
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S:
Supply pad
AIO:
Analog I/O
DI_PD:
Digital input with internal pull down
DO:
Digital output – push-pull
ams Datasheet
[v1-06] 2015-Aug-28
AS5403A/D/E − Electrical Characteristics
Electrical Characteristics
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. These are stress
ratings only. Functional operation of the device at these or any
other conditions beyond those indicated under Operating
Conditions is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device
reliability.
Figure 7:
Absolute Maximum Ratings
Symbol
Parameter
Min
Max
Unit
VDD
DC supply voltage at pin VDD
-18
18
V
OUT_OV
Voltage at pin OUT and DSW
-0.3
18
V
VREG
DC voltage at VDD3 pin
-0.3
5
V
VDIG
DC voltage at digital input
and output pins
-0.3
5
V
Iscr
Input current
(latchup immunity)
-100
100
mA
AEC-Q100-004
ESD
Electrostatic discharge
kV
AEC-Q100-002
EEPcyc
Tstrg
±2
EEPROM endurance cycles
Storage temperature
ams Datasheet
[v1-06] 2015-Aug-28
-55
100
cycles
150
°C
Comments
A part of EEPROM is reserved for
factory settings. This part is
pre-programmed and locked by
ams.
The customer area of EEPROM can
be programmed up to 100 times at
Tamb=27deg.
EEPROM is intended to be
programmed at 0h only in the
customer production line and shall
not be reprogrammed during
operation in the field.
Min – 67°F; Max 302°F
Page 7
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AS5403A/D/E − Electrical Characteristics
Symbol
Parameter
TBody
Body temperature
RHNC
Relative humidity
non-condensing
MSL
Moisture Sensitivity Level
Min
Max
Unit
Comments
260
°C
The reflow peak soldering
temperature (body temperature)
specified is in accordance with
IPC/JEDEC J-STD-020
“Moisture/Reflow Sensitivity
Classification for Non-Hermetic
Solid State Surface Mount
Devices”. The lead finish for Pb-free
leaded packages is matte tin
(100%Sn).
85
%
5
Represents a maximum floor life
time of 168h
3
Operating Conditions
Operating Conditions: Operating temperature = -40°C to 150°C,
VDD = 4.5 - 5.5V unless otherwise noted.
Figure 8:
Electrical Characteristics
Symbol
Tambient
Parameter
Operating temperature
IDD
Supply current
VDD
Positive supply voltage
TSTUP
Power up time
Page 8
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Min
Typ
Max
Unit
150
°C
20
25
mA
5
5.5
V
10
ms
-40
4.5
Comments
ams Datasheet
[v1-06] 2015-Aug-28
AS5403A/D/E − Electrical Characteristics
Magnetic Sensor Conditions
Operating Conditions: Operating temperature = -40°C to 150°C,
VDD = 4.5 - 5.5V unless otherwise noted.
Figure 9:
Magnetic Characteristics
Symbol
BIR
Parameter
Magnetic Range X,Y,Z
Min
Typ
Max
Unit
Comments
±5(1)
±50
mT
AS5403A (Bx, Bz)
±5(1)
±100
mT
AS5403D (Bx, Bz)
±5(1)
±100
mT
AS5403E (Bx, By)
SRDxz_temp
Sensitivity ratio drift Bx/Bz
-3
3
%
Temperature only
SRDxy_temp
Sensitivity ratio drift Bx/By
-3
3
%
Temperature only
ODx
Offset drift Bx
-1(3)
1(3)
%FSR(2)
ODy
Offset drift By
-1(3)
1(3)
%FSR(2)
ODz
Offset drift Bz
-0.5
0.5
%FSR(2)
Note(s) and/or Footnote(s):
1. Minimum condition is valid if both input components are above 5mT.
2. 50mT AS5403A, 100mT AS5403D and AS5403E.
3. Parameter is valid for version AS5403E and AS5403D. AS5403A ±1.5%FSR.
ams Datasheet
[v1-06] 2015-Aug-28
Page 9
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AS5403A/D/E − Electrical Characteristics
DC/AC Characteristics for Digital Pads
Figure 10:
DC/AC Characteristics
Symbol
Parameter
VIH
High level input voltage
VIL
Low level input voltage
IPD
Pull-Down input current
ILPD
Min
Typ
Max
70
Unit
Comments
%VDD3
30
%VDD3
30
100
μA
Input leakage current PD
-5
5
μA
VOH
High level output voltage
VDD3-0.5
VOL
Low level output voltage
Capacitive load
CL
V
IL=-4mA
0.4
V
IL=4mA
100
pF
Output Driver Parameters
Figure 11:
Output Driver Characteristics OUT
Symbol
Parameter
Min
Typ
Max
Unit
Comments
GENERAL
ILIMITLSD
Short circuit output
current (LSD)
5
10
20
mA
VOUT=+18V
ILIMITHSD
Short circuit output
current (HSD)
-20
-10
-5
mA
VOUT=0V
TSCDET
Short circuit detection
time
20
600
μs
Output stage turned
OFF
TSCREC
Short circuit recovery
time
2
20
ms
Output stage turned
ON
Output leakage
-20
20
μA
VOUT=5V; VDD=5V
BGNDPU
Output voltage broken
GND with pull-up
96
100
%VDD
BGNDPD
Output voltage broken
GND with pull-down
0
4
%VDD
BVDDPU
Output voltage broken
VDD with pull-up
96
100
%VDD
BVDDPD
Output voltage broken
VDD with pull-down
0
4
%VDD
ILEAK
Page 10
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Guaranteed by design
ams Datasheet
[v1-06] 2015-Aug-28
AS5403A/D/E − Electrical Characteristics
Symbol
Parameter
Min
Typ
Max
Unit
Comments
ANALOG
OUTVOH
Output level high
OUTVOL
Output level low
OUTINL
Output integral non
linearity
OUTDNL
Output differential non
linearity
-10
OUTOFF
Output offset
-25
OUTUD
Update rate of the
Output
OUTSTPR
96
%VDD
IOUT=-3mA
4
%VDD
IOUT=3mA
10
LSB
Between 4% and 96%
of VDD
10
LSB
Between 4% and 96%
of VDD
mV
Best fit line offset;
evaluated between 4%
and 96% of VDD
1000
Output step response
(rising)
μs
μs
From step on DAC
input to 90% of VDD on
the OUT pin;
RPUOUT=4.7KΩ;
CLOUT=1nF;
VDD=5V
150
μs
From step on DAC
input to 10% of VDD on
the OUT pin;
RPUOUT=4.7KΩ;
CLOUT=1nF;
VDD=5V
of value at mid code
150
OUTSTPF
Output step response
(falling)
OUTDRIFT
Output Voltage
Temperature drift
-0.5
0.5
%
OUTRATE
Output ratiometricity
error
-1.5
1.5
%
VDD
Between 4% and 96%
of VDD
OUTNOISE
Noise
25
mVpp
1KHz to 30kHz;
at 2048 LSB level, lab
characterization only
ams Datasheet
[v1-06] 2015-Aug-28
Page 11
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AS5403A/D/E − Electrical Characteristics
Symbol
Parameter
Min
Typ
Max
Unit
Comments
PWM frequency for
version AS5403A and
AS5403D and AS5403E
125 Hz in table
selection 2. See
Figure 44
PWM
PWMF
PWM frequency
1000
Hz
TSYNCH
PWM Sync time
0.1*1/PWMF
s
PWMVOH
Output voltage high
4.6
PWMVOL
Output voltage low
0
PWMSRR
PWM slew rate
(rising edge)
PWMSRF
PWM slew rate
(falling edge)
0.4
1
2
1
2
V
VDD=5V; IOUT=-5mA
V
VDD=5V, IOUT=5mA
V / μs
Between 25% and 75%
RPUOUT=10kΩ;
CLOUT=4.7nF
VDD=5V
V / μs
Between 75% and 25%
RPUOUT=10kΩ;
CLOUT=4.7nF
VDD=5V
%
VDD
VDD=5V
30
%
VDD
VDD=5V
9.6
kHz
VDD=5V
4
4
PROGRAMMING
OUTVIH
High level input voltage
at OUT
OUTVIL
Low level input voltage
at OUT
BRATE
UART baud rate
Page 12
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70
2.4
ams Datasheet
[v1-06] 2015-Aug-28
AS5403A/D/E − Electrical Characteristics
Figure 12:
Output Driver Characteristics DSW
Symbol
Parameter
Min
Typ
Max
Unit
Comments
GENERAL
DSWISCLS
Short circuit output current
(LSD)
5
10
20
mA
VDSW=+18 V
DSWISCHS
Short circuit output current
(LSD)
-20
-10
-5
mA
VDSW=0V
DSWTSCDET
Short circuit detection time
5
%PWM
DSWTSCRC
Short circuit recovery time
DSWILEAK
Output leakage
-20
20
μA
BGNDPU
Output voltage broken
GND with pull-up
96
100
%VDD
BGNDPD
Output voltage broken
GND with pull-down
0
4
%VDD
BVDDPU
Output voltage broken
VDD with pull-up
96
100
%VDD
BVDDPD
Output voltage broken
VDD with pull-down
0
4
%VDD
DSWVOH
Output voltage high
4.6
DSWVOL
Output voltage low
0
DSWSRR
DSW slew rate
(rising edge)
DSWSRF
DSW slew rate
(falling edge)
ams Datasheet
[v1-06] 2015-Aug-28
PWM
cycles
16
-4
1
0.4
-2
2
-1
4
V
VDD=5V; IDSW=-5mA
V
VDD=5V; IDSW=5mA
V/μs
Between 25% and 75%;
RPUDSW = 10kΩ;
CLDSW=4.7nF; VDD=5V
(PP with pullup)
V/μs
Between 75% and 25%;
RPUDSW = 10kΩ;
CLDSW=4.7nF; VDD=5V
(PP with pullup)
Page 13
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AS5403A/D/E − Electrical Characteristics
SPI Timing
Figure 13:
SPI Timing
Symbol
TSCLK
Parameter
Min
Typ
Max
Unit
SCLK period
250
ns
TSCLKH
SCLK high phase
125
ns
TSCLKL
SCLK low phase
125
ns
TLEAD
SCS lead time
100
ns
TLAG
SCS lag time
100
ns
TSCSL
SCS low phase
2500
ns
TSUPI
SDI input setup time
50
ns
THLDI
SDI input hold time
50
ns
TVALID
SDO output valid time
THLDO
SDO output hold time
50
0
Note
ns
CL = 100pF
ns
CL = 100pF
TACC
SDO output access time
100
ns
CL = 100pF
TDIS
SDO output disable time
50
ns
CL = 100pF
TRISE
SDO output rise time
60
ns
CL = 100pF
TFALL
SDO output fall time
60
ns
CL = 100pF
Page 14
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ams Datasheet
[v1-06] 2015-Aug-28
AS5403A/D/E − Electrical Characteristics
Figure 14:
SPI Timing Diagram
SCS
TLEAD
TSCLKH
TSCLKL
TSCLK
TLAG
TSCSL
TLAG
TSCSL
SCLK
TSUPI
THLDI
SDI
MSB IN
DATA IN
LSB IN
SCS
TLEAD
TSCLKH
TSCLKL
TSCLK
SCLK
TACC
SDO
THLDO
MSB OUT
TDIS
DATA OUT
LSB OUT
TRISE,TFALL
UART Timing
Figure 15:
UART Timing
Symbol
Parameter
Min
UARTF
UART baud rate
2.4
ams Datasheet
[v1-06] 2015-Aug-28
Typ
Max
Unit
9.6
kHz
Page 15
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AS5403A/D/E − Functional Description
Functional Description
The AS5403 is manufactured in a CMOS process and uses lateral
and vertical Hall sensor technology for sensing the magnetic
field distribution in all 3D directions. The integrated 3D-Hall
pixels are placed with a pixel pitch of 2.5 mm and deliver a
voltage representation of the magnetic field at the surface of
the IC.
Through Sigma-Delta Analog / Digital Conversion and Digital
Signal-Processing (DSP) algorithms, the AS5403 provides
accurate high-resolution absolute angular position
information. For this purpose a Coordinate Rotation Digital
Computer (CORDIC) calculates the angle and the magnitude.
Signal Processing Path Front
The AS5403 can be configured in different operation modes.
These are absolute (ABS), average (AVG) and differential (DIFF).
The internal calculation scene is changed automatically with
the selected mode.
Figure 16:
Signal Processing Path AS5403A and AS5403D (Bx and Bz)
Z0
Z1
MV
1
MV
2
Swap
ABS
AVG
DIFF
Bj‘
Gain Bj
Mux
Bj
Angle
Offset Bj
Angle
Calculation
X0
X1
Offset Bi
MV
3
MV
4
ABS
AVG
DIFF
Bi
Bi‘
Magnitude
Gain Bi
Note(s) and/or Footnote(s):
1. Yellow → Functional block
2. Blue → Readable register
3. Green → Write/Readable EEPROM parameter
Page 16
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ams Datasheet
[v1-06] 2015-Aug-28
AS5403A/D/E − Functional Description
Figure 17:
Signal Processing Path AS5403E (Bx and By)
Y0
Y1
MV
1
MV
2
Swap
ABS
AVG
DIFF
Bj‘
Gain Bj
Mux
Bj
Angle
Offset Bj
Angle
Calculation
X0
X1
Offset Bi
MV
3
MV
4
ABS
AVG
DIFF
Bi
Bi‘
Magnitude
Gain Bi
Note(s) and/or Footnote(s):
1. Yellow → Functional block
2. Blue → Readable register
3. Green → Write/Readable EEPROM parameter
The individual component from 3D Hall pixel 0 and 3D Hall pixel
1 are measured sequentially. Refer to Figure 4. This sequence is
predefined and depends also on the mode selection (absolute,
average or differential). The digital values after conversation are
stored in the measurement value registers MV1 to MV4. These
values represent the raw data. The pre-calculation leads to
internal result values of Bi’ and Bj‘. The final Bi and Bj values are
available after further manipulation possibilities like offset or
gain manipulation. In addition is an exchange of Bi and Bj
possible over the swap function. The calculated angle and
magnitude can be read out too.
Internal Calculation Formulas
Figure 18:
Formulas for Calculation
Absolute Mode (ABS)
ams Datasheet
[v1-06] 2015-Aug-28
Average Mode (AVG)
Differential Mode (DIFF)
Page 17
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AS5403A/D/E − Functional Description
Signal Processing Path Backend
Figure 19:
Signal Processing Path Backend
Angle
Pre-Scale
Multiplication
Linearization
Table
Angle Offset
Linerization
Angle
Offset
Offset
Angle
linearized
OUT Driver
Configuration
Gain
Output
Characterisics
Post
Processing
Pre-Scale
Linearization
Factor
Position
1
Clamping 2
Clamp
Low 2
Clamp
Low 1
Clamp
High 2
to OUT Driver
Position
2
Output
Selecton
Clamp
High 1
Comparator
to DSW Driver
DSW Setting
DSW Driver
Configuration
Note(s) and/or Footnote(s):
1. Yellow → functional block
2. Blue → Readable register
3. Green → Write/readable EEPROM parameter
A pre-scale function can be used to extend the angle range. This
is in particular needed in sector applications (off-axis) or small
linear strokes. This function optimizes the usage of the
linearization function in the following step. The linearization
takes maximum 33 supporting point. These points are equally
spread over the angular range. The post-processing function is
able to manipulate the output characteristic in gain, offset and
clamping. The digital output switch function uses a comparator.
The switching value and hysteresis can be defined.
Finally the configuration of the output defines the operation of
the output drivers.
Page 18
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ams Datasheet
[v1-06] 2015-Aug-28
AS5403A/D/E − Operation
Operation
The AS5403 operates at 5V ±10%, using one internal
Low-Dropout (LDO) voltage regulator. For operation, the 5V
supply is connected to pin VDD. While VDD3 (LDO output) must
be buffered by 1μF capacitor, the VDD requires a 1μF capacitor.
All capacitors (low ESR ceramic) are supposed to be placed close
to the supply pins (see Figure 20).The VDD3 output is intended
for internal use only. It must not be loaded with an external load.
CVDD
SPI
4.5 - 5.5V
{
TEST
SCS
SCLK
SDI
SDO
TEST
NC
AS5403
Figure 20:
Connections for 5V Supply Voltages
DSW
OUT
GND
VDD3
VDD
NC
NC
}
Outputs
CVDD3
Note(s) and/or Footnote(s):
1. The pin VDD3 must always be buffered by a capacitor. It must not be left
floating, as this may cause instable internal supply voltages which may lead
to larger output jitter of the measured angle.
The supply pin is over voltage protected up to 18V. In addition the device has
a reverse polarity protection.
ams Datasheet
[v1-06] 2015-Aug-28
Page 19
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AS5403A/D/E − Operation
External Components
Figure 21:
External Components in the System
Symbol
Parameter
CVDD
VDD Buffer capacitance
ESRCBVDD
ESR of VDD capacitance
CVDD3
ESRREG3
VDD3 Buffer capacitor
Min
Typ
Max
Unit
0.8
1
1.2
μF
0.3
Ω
1.2
μF
0.3
Ω
0.8
ESR of VDD3 capacitance
1
CLOUT
OUT Load Capacitance
0
20
nF
RPUOUT
OUT Pull-Up Resistance
4.7
10
kΩ
RPDOUT
OUT Pull-Down Resistance
4.7
10
kΩ
CLDSW
DSW Load Capacitance
0
20
nF
RPUDSW
DSW Pull-Up Resistance
4.7
10
kΩ
RPDDSW
DSW Pull-Down Resistance
4.7
10
kΩ
Page 20
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Note
ams Datasheet
[v1-06] 2015-Aug-28
AS5403A/D/E − Built-In Safety
Built-In Safety
Figure 22:
Diagnostic Functions of the AS5403
Monitoring
Error Type
Source
Comments
VDD undervoltage
Hardware-Error (1)
Power management
Recoverable
VDD overvoltage
Hardware-Error (1)
Power management
Recoverable
VREG undervoltage
Hardware-Error (1)
Power management
Recoverable
Oscillator failure
Hardware-Error (1)
CLK management
Not recoverable
Loss of GND
Hardware-Error (1)
Output driver
Loss of VDD
Hardware-Error (1)
Output driver
Output short circuit
Hardware-Error (1)
Output driver
Recoverable after 16
PWM period
PWM/Digital switch readout
failure
Hardware-Error (1)
Output driver
Recoverable after 16
PWM period
Signature failure
Hardware-Error (1)
EEPROM
Not recoverable
Linearization Overflow
Algorithm Error (2)
Digital DSP
Range Warning
Algorithm Error (2)
Digital DSP
Sensitivity Correction Overflow
Algorithm Error (2)
Digital DSP
Normalization Overflow
Algorithm Error (2)
Digital DSP
Magnet Lost
Algorithm Error (2)
Digital DSP
Self Monitoring Error
Hardware-Error (1)
Digital DSP
Not recoverable
PWM synchronization Error
Hardware-Error (1)
PWM Engine
Not recoverable
Note(s) and/or Footnote(s):
1. Hardware Error output to high impedance (HZ).
2. Algorithm Error PWM at 5%DC and /PWM at 95%DC depending on Diag_High, digital switches in high impedance (HZ), analog
output insight upper or lower failure band depending on Diag_High. All algorithm errors are recoverable.
ams Datasheet
[v1-06] 2015-Aug-28
Page 21
Document Feedback
AS5403A/D/E − Output Drivers
Output Drivers
AS5403 has two output stages, with different characteristics.
The output driver on pin OUT can be programmed as analog
output or low side driver PWM (/PWM), and includes a receiver
for the bidirectional communication used to configure the
device at module level. The driver on pin DSW is a low side only
and can be configured as /PWM (PWM) or digital switch but
doesn’t have the receiver and in communication behaves as
programmed in the EEPROM. Possible configurations for OUT
selectable from EEPROM bits are:
Figure 23:
Possible Configurations of OUT Pin
OUT
CFG <2>
OUT
CFG <1>
OUT
CFG <0>
Analog Output
Mode
0
0
0
Push-Pull analog output driver external
pull up or pull down required
PWM push/pull
0
1
0
Pulse width modulated output with
push/pull driver external pull up required
PWM open drain
0
1
1
Pulse width modulated output with low
side driver external pull up required
PWMn push/pull
1
0
0
Inverted pulse width modulated output
with push/pull driver external pull up
required
PWMn push/pull
1
0
1
Inverted pulse width modulated output
with low side driver external pull up
required
PWM open drain
reduced slew rate
1
1
0
Pulse width modulated output with low
side driver external pull up required
reduced falling edge
Mode
Note
Note(s) and/or Footnote(s):
1. All other not specified combinations are reserved and not allowed. To avoid floating situation in diagnostic case a pull up resistor
is recommended also in push/pull mode.
Page 22
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ams Datasheet
[v1-06] 2015-Aug-28
AS5403A/D/E − Output Drivers
PWM Output
When the PWM mode is selected the measured position is
proportional to the duty cycle. A range of 10% to 90% of the
PWM period is used to carry the information and the remaining
ranges are used as a fail signal (a 5% PWM means Algorithm
Error, no change over a whole period means a Hard Error). The
80% of the PWM period contains the position information.
Depending on the AS5403 version (A/D/E) and mode selection
the PWM frequency can change between 1.0 kHz and 0.125 kHz.
The PWM resolution can also change between 10 bit (1024
positions) for 1.0 kHz and 12 bit (4096 positions) for 0.125 kHz.
The behavior of PWM and /PWM is shown in the following
figures.
Figure 24:
PWM Output
PWM Behavior
Algorithm
Error
0
511/
2047
1023 /
4095
Hard
Error
DC (%)
0
ams Datasheet
[v1-06] 2015-Aug-28
5
10
50
90
95
100
Page 23
Document Feedback
AS5403A/D/E − Output Drivers
Figure 25:
/PWM Output Signal
/PWM Behavior
Algorithm
Error
0
511/
2047
1023 /
4095
Hard
Error
DC (%)
100
95
90
50
10
5
0
At the end of the power up phase, after an under voltage
recovery and after the transition from sleep to normal mode a
synch pulse with duration TSYNCH precedes the PWM wave as
shown in the following picture. Only after the pulse the digital
switches leave the HZ state.
Page 24
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ams Datasheet
[v1-06] 2015-Aug-28
AS5403A/D/E − Output Drivers
Figure 26:
Sync Pulse at PWM After Power-Up
TSTUP
VDD
V DDUV THH
TS Y NCH
PWM
/PWM
DIGSW_LS
DIGSW_HS
ams Datasheet
[v1-06] 2015-Aug-28
Page 25
Document Feedback
AS5403A/D/E − Output Drivers
Digital Switch
The AS5403 provides a digital output switch function. This
signal can be defined by settings in the EEPROM. The switching
point DSW SW POINT <11:0> are compared to the calculated
linearized sensor position. The polarity is selectable and the
hysteresis is configurable. Possible configurations for DSW
selectable from EEPROM bits are:
Figure 27:
Possible Configurations of DSW Pin
DSW
CFG<2>
DSW
CFG <1>
DSW
CFG <0>
Digital switch
push/pull
0
0
0
Push-Pull digital output driver external
pull up required
Digital switch
open source
0
0
1
High side digital driver external pull
down required
Digital switch
open drain
0
1
0
Low side digital driver external pull up
required
PWMn push/pull
0
1
1
Inverted pulse width modulated output
with push/pull driver external pull up
required
PWMn open drain
1
0
0
Inverted pulse width modulated output
with low side driver external pull up
required
PWM push/pull
1
0
1
Pulse width modulated output with low
side driver external pull up required
PWM open drain
1
1
0
Pulse width modulated output with low
side driver external pull up required
Mode
Comments
Note(s) and/or Footnote(s):
1. All other not specified combinations are reserved and not allowed.
Page 26
Document Feedback
ams Datasheet
[v1-06] 2015-Aug-28
AS5403A/D/E − Output Drivers
DSW_POL= 1:
Figure 28:
DSW Characteristic With Positive Polarity
OUTPUT VALUE
DSW = 5V
Hysteresis
[LSB]
+
DSW = 0V
0
4095
DSW SW POINT <11:0>
POSITION
DSW_POL=0:
Figure 29:
DSW Characteristic With Negative Polarity
OUTPUT VALUE
DSW = 5V
Hysteresis
[LSB]
+
DSW = 0V
0
ams Datasheet
[v1-06] 2015-Aug-28
4095
DSW SW POINT <11:0>
POSITION
Page 27
Document Feedback
AS5403A/D/E − 4-Wire Serial Peripheral Inter face (SPI)
4-Wire Serial Peripheral
Interface (SPI)
AS5403 is equipped with a 4wire serial peripheral interface (SPI)
to access the EEPROM memory and the read /write registers.
SCS input pin (active high) selects the device for serial transfers.
Register data is shifted in from the external master on the SDI
pin or shifted out from the device on the SDO pin on each
subsequent SCLK, in both the cases MSB first. Data are captured
on the rising edge and shifted on the falling edge of SCLK for
receiving command and transmitting command. An even parity
bit is used to check the consistency of the frame. SPI protocol
is built by frames; each frame is composed by 4 bytes and it is
detected only when SCS pin is high. If a frame contains a
number of bits different from the expected the command is not
executed.
Valid commands for the SPI interface are the following:
Figure 30:
Commands SPI
CMD Name
CMD
Value
AS5403
Communication Mode
Write
0
Write data in the memory area
Read
1
Read data from the memory area
Note
SLAVE
SLAVE/MASTER
Write (0)
The first byte of the write command is composed by the
command identifier (CMD) the even parity bit (PAR) and the
MSBs of the address AD<10:8>.
The second byte of the command is the remaining part of the
address AD<7:0>, the third and the fourth byte contains the
data word we want to write (D<15:0>) on address AD<10:0>.
The device forces the SDO pin low. With this command it is
possible to access the EEPROM locations and the read/write
registers area.
Figure 31:
SPI Write
SCS
SCLK
SDI
CMD
0
0
0
PAR
AD10
AD9
AD8
AD7
AD6
AD5
AD4
AD3
AD2
AD1
AD0
D15
D14
D13
D12
D11
D10
D9
D8
D7
D6
D5
D4
D3
D2
D1
D0
SDO
Page 28
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ams Datasheet
[v1-06] 2015-Aug-28
AS5403A/D/E − 4-Wire Serial Peripheral Interface (SPI)
Read (1)
The read command is composed by 2 frames, in the first one
the external master sends the command, the even parity and
the address to be read on the SDO line (the last 16 bits are
ignored). The device forces the SDO pin low.
Figure 32:
SPI Read
SCS
SCLK
SDI
CMD
0
0
0
PAR
AD 10
AD9
AD8
AD7
AD6
AD5
AD4
AD3
AD 2
AD1
AD0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
SDO
After the switching time (TSCSL) the device drives the SDO line
and when the SCS pin goes high starts to send out the answer.
The first byte of the second frame is composed by the command
the device is executing, the even parity and the MSBs of the
address required in the previous frame (AD<10:8>). The second
byte of the command is the remaining part of the address
AD<7:0>, the third and the fourth bytes are the data word at
the required address (AD<10:0>). With this command it is
possible to access the EEPROM locations and the read/write
registers area.
ams Datasheet
[v1-06] 2015-Aug-28
Page 29
Document Feedback
AS5403A/D/E − Programming the AS5403
A standard half duplex UART protocol is used to exchange data
with the device in the communication mode.
Programming the AS5403
UART Interface for Programming
The AS5403 uses a standard UART interface with two bytes for
address and two bytes for the data content. The read or write
mode is selected in the first byte. An even parity for every byte
is included. The timing (baud-rate) is selected by the AS5403
over an initial command from the master. The baud rate register
can be read and overwritten. The keep synchronization it
AS5403 synchronizes art every Start bit. This happens during a
standard write access 3 times. A time out function detects not
complete commands and resets the AS5403 UART after the
timeout period.
Figure 33:
Valid Commands
CMD Name
Description
AS5403 Communication Mode
Write
Write data in the EEPROM/ SFR memory
Read
Read data from the EEPROM/ SFR memory
SLAVE
SLAVE/MASTER
In case of Write command the request is followed by the frames
containing the data to write.In case of Read command the
communication direction will change and the device will
answer with the frames containing the data requested.
Frame Organization
The UART frame consists of 1 start bit (low level), 8 data bit, 1
even-parity bit and 1 stop bit (high level). Data are transferred
from LSB to MSB.
Figure 34:
General UART Frame
start
Page 30
Document Feedback
D0
D1
D2
D3
D4
D5
D6
D7
par
stop
ams Datasheet
[v1-06] 2015-Aug-28
AS5403A/D/E − Programming the AS5403
In case of read command the idle phase between the command
and the answer is TSW.
Figure 35:
Bit Assignment in Frame
Symbol
Parameter
Min
Typ
Max
Unit
START
Start bit
1
TBIT
Dx
Data bit
1
TBIT
PAR
Parity bit
1
TBIT
STOP
Stop bit
TSW
Slave/Master Switch Time
1
TBIT
7
TBIT
Each communication starts with the reception of a request from
the external controller. The request consists of 3 frames: one
synchronization byte and 1 word for the command.
The synchronization frame contains the data 0x55 and allows
the UART to measure the external controller baud-rate.
Figure 36:
Synchronization Frame 0x55 Hex
start
ams Datasheet
[v1-06] 2015-Aug-28
D0
D1
D2
D3
D4
D5
D6
D7
par
stop
Page 31
Document Feedback
AS5403A/D/E − Programming the AS5403
The 2nd and 3rd frames contain the command Read/ Write
(1 bit) and the address (7+7 bits):
Figure 37:
2nd and 3rd Frame Addressing
start
start
AD
0
AD
7
AD
1
AD
2
AD
3
AD
4
AD
5
AD
R/Wn
6
par
AD
8
AD
9
AD
10
AD
11
AD
12
AD
R/Wn
13
par
stop
D6
par
stop
par
stop
AD
R/Wn
13
par
stop
D0
5
D0
6
D0
7
par
stop
D0
5
D0
6
D0
7
par
stop
stop
Write Command
Figure 38:
Write Command Frames
Synchronization frame:
start
D0
D1
D2
D3
D4
D5
D7
Write command frame low address:
start
AD
0
AD
1
AD
2
AD
3
AD
4
AD
5
AD
10
AD
11
AD
12
AD
6
R/
Wn
Write command frame high address:
start
AD
7
AD
8
AD
9
Data L frame (LSBs of the data to write on address AD<13:0>):
start
D0
0
D0
1
D0
2
D0
3
D0
4
Data H frame (MSBs data to write on address AD<13:0>):
start
Page 32
Document Feedback
D0
0
D0
1
D0
2
D0
3
D0
4
ams Datasheet
[v1-06] 2015-Aug-28
AS5403A/D/E − Programming the AS5403
Read Command
Figure 39:
Read Command Frames
Synchronization frame:
start
D0
D1
D2
D3
D4
D5
D6
D7
par
stop
par
stop
par
stop
Read command frame low address:
start
AD
0
AD
1
AD
2
AD
3
AD
4
AD
5
AD
10
AD
11
AD
12
AD
6
R/
Wn
Read command frame high address:
start
AD
7
AD
8
AD
9
AD
R/Wn
13
Data L frame (LSBs of the data read at the address AD<13:0>):
start
D0
0
D0
1
D0
2
D0
3
D0
4
D0
5
D0
6
D0
7
par
stop
D0
14
D0
15
par
stop
Data H frame (MSBs of the data read at the address AD<13:0>):
start
D0
8
D0
9
D0
10
D0
11
D0
12
D0
13
BAUD RATE Automatic Detection
The UART includes a built-in baud-rate monitor that uses the
synchronization frame to detect the external controller baud
rate. This baud-rate is used after the synchronization byte to
decode the following frame and to transmit the answer and it
is stored in the BAUDREG register.
ams Datasheet
[v1-06] 2015-Aug-28
Page 33
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AS5403A/D/E − Programming the AS5403
Programming Procedure
The EEPROM programming is possible over the SPI or UART
interface. A page write/read mode with 64 pages 8 words each
is implemented.
Figure 40:
Page Mode Address
Address
Page
0x000 - 0x007
1
0x008 - 0x00F
2
:
:
0x1F8 - 0x1FF
64
Page Write mode procedure:
1. Write 0x00 on address 0x2FF (START DSP = 0)
2. Write the EEPROM words (SPI/UART) inside a page
(min 1 max 8 words)
3. Write 0x0003 on address 0x2FF (CFG_EPP=11)
4. Wait for 10 ms
5. Repeat from 2. for further programming.
It is important that the write access to the selected EEPROM
page are consecutive: a write command in a different page or
a read command before writing CFG_EPP will delete the data.
A writing to factory reserved area will be ignored.
After programming it is mandatory to read back the EEPROM
content and to download again the EEPROM to avoid
misalignment with the mirror registers. This can be done with
a power up or writing 0x0004 on address 0x2FF
(EE_DWNL SFR).
The programming procedure is not allowed in case Customer
Lock word is 0x55AA after EEPROM download (mask_fuse=1).
Lock Procedure and Signature Calculation
The AS5403 contains a signature diagnostic function for the
EEPROM. This signature is calculated in the AS5403 during
power up and is compared to the calculated signature directly
after the end of line calibration by the customer. A deviation
leads to an error indication in the diagnostic flag or into the
failure band mode at the output. The signature check is enabled
in case of a locked device by the user.
Page 34
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ams Datasheet
[v1-06] 2015-Aug-28
AS5403A/D/E − Device Configuration
Device Configuration
AS5403 is equipped with a 1kx8 EEPROM memory to store the
factory settings and the customer configuration data. The
device can be configured using the UART or 4wire Serial
Peripheral Interface (SPI).
EEPROM Memory Map
Note(s): Write 0x0000 hex to register address 0x2FF
(START DSP = 0) before a read or write access to EEPROM.
Figure 41:
EEPROM Memory Map
ADDRESS (HEX)
ams Datasheet
[v1-06] 2015-Aug-28
EEPROM Location Name
0x00B
Sequencer Control
0x00F
Magnet Lost threshold and hysteresis
0x019
Offset Bj
0x01A
Gain Bj
0x01E
Gain Bi
0x01F
Offset Bi
0x05F
Linearization table entry 16
0x060
Linearization table entry 0
0x061
Linearization table entry 1
0x062
Linearization table entry 2
0x063
Linearization table entry 3
0x064
Linearization table entry 4
0x065
Linearization table entry 5
0x066
Linearization table entry 6
0x067
Linearization table entry 7
0x068
Linearization Table entry 8
0x069
Linearization table entry 9
0x06A
Linearization table entry 10
0x06B
Linearization table entry 11
0x06C
Linearization table entry 12
0x06D
Linearization table entry 13
0x06E
Linearization table entry 14
0x06F
Linearization table entry 15
0x070
Linearization table entry -16
Page 35
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AS5403A/D/E − Device Configuration
ADDRESS (HEX)
Page 36
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EEPROM Location Name
0x071
Linearization table entry -15
0x072
Linearization table entry -14
0x073
Linearization table entry -13
0x074
Linearization table entry -12
0x075
Linearization table entry -11
0x076
Linearization table entry -10
0x077
Linearization table entry -9
0x078
Linearization table entry -8
0x079
Linearization table entry -7
0x07A
Linearization table entry -6
0x07B
Linearization table entry -5
0x07C
Linearization table entry -4
0x07D
Linearization table entry -3
0x07E
Linearization table entry -2
0x07F
Linearization table entry -1
0x1CF
Pre-Scale linearization
0x1D0
Post-Processing offset
0x1D1
Post-Processing gain
0x1D2
Clamp Low 1
0x1D3
Clamp High 1
0x1F5
Clamp high 2 (MSBs), clamp low 2
0x1F6
Clamp high 2 (LSBs)
0x1F7
Angle offset
0x1F8
Customer LOCK
0x1F9
Output configuration and PWM
frequency
0x1FA
DSW driver configuration
0x1FB
DSW settings
0x1FC
Customer ID
0x1FD
Customer ID
0x1FE
Customer ID
0x1FF
EEPROM signature + customer ID
ams Datasheet
[v1-06] 2015-Aug-28
AS5403A/D/E − Device Configuration
Figure 42:
EEPROM Sequencer Control 0x00B
Register
Hex
Access
Bit
Function
Default
Reserved
0
Note
D15 (MSB)
D14
D13
0x00B
R/W
ams Datasheet
[v1-06] 2015-Aug-28
D12
ExtRng
0
D11
Reserved
0
D10
Swap
0
D9
Reserved
0
D8
Reserved
0
D7
Table Select <1>
0
D6
Table Select <0>
1
D5
Reserved
0
Extended Range (for differential
mode):
0 = disabled
1 = enabled
Swap Bi and Bj before angle
calculation
These bits allow the selection of 3
different operating modes, stored in
3 individual sequencer tables. Don’t
use 11 --> no operation
Differential mode:
0 = absolute measurement of one
pixel
1 = differential measurement of
both pixels
D4
DIFF
0
D3
Reserved
0
D2
SeqEn
1
1 = Sequencer enabled
0 = Sequencer disabled
Average mode:
0 = absolute measurement of one
pixel,
1 = average measurement of both
pixels
D1
AVG
1
D0 (LSB)
Reserved
0
Page 37
Document Feedback
AS5403A/D/E − Device Configuration
Figure 43:
Possible Table Selection AS5403A and AS5403D
Sensor
arrangement
EEPROM
0x00B
settings
Table 0
Table Select 00
Table 1
Table Select 01
Table 2
Table Select 10
X/Z
X/Z
X/Z
Absolute Mode Pixel1
1 kHz Sampling Rate
Differential/Average Mode
1 kHz Sampling Rate
Differential/Average Mode
1 kHz Sampling Rate
N
N
S
S
Magnet
orientation
Figure 44:
Possible Table Selection AS5403E
Table 0
Table Select 00
Table 1
Table Select 01
Table 2
Table Select 10
X/Y
X/Y
X/Y
Differential/Average Mode
1 kHz Sampling Rate
Absolute Mode
1 kHz Sampling Rate
Absolute Mode
0.125 kHz Sampling Rate
Sensor
arrangement
EEPROM
0x00B
settings
Magnet
orientation
Page 38
Document Feedback
Off-axis (ring magnet or sector magnet)
ams Datasheet
[v1-06] 2015-Aug-28
AS5403A/D/E − Device Configuration
Figure 45:
EEPROM Magnet Lost 0x00F
Register
Hex
Access
Bit
Function
D15 (MSB)
:
R/W
Note
0
Reserved
D11
0x00F
Default
:
0
D10
MgnLostHyst<2>
1
:
:
:
D8
MgnLostHyst<0>
0
D7
MgnLostLmt<7>
0
:
:
:
D0 (LSB)
MgnLostLmt<0>
0
Magnet lost hysteresis
Magnet lost threshold value
compared to register 0x520
The magnitude information is compared with the magnet lost
threshold value calculated with following formula:
MagnetLostLimit = MgnLostLmt <7:0> * 64
The hysteresis is calculated using following
formula:
1
Hysteresis = MagnetLost Limit *
2 MgnLostHys
t < 2:0 >
MgnLostHyst<2:0>=0 disables the hysteresis
Figure 46:
EEPROM Offset Bj 0x019
Register
Hex
Access
Bit
Function
Default
Note
Offset Bj
0
Offset to the Bj value to improve
performance
Signed integer, range [-32768;32767]
D15 (MSB)
0x019
R/W
:
D0 (LSB)
ams Datasheet
[v1-06] 2015-Aug-28
Page 39
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AS5403A/D/E − Device Configuration
Figure 47:
EEPROM Offset Bi 0x01F
Register
Hex
Access
Bit
Function
Default
Note
Offset Bi
0
Offset to the Bi value to improve
performance
Signed integer, range [-32768;32767]
Function
Default
Note
Gain Bj
+1
decimal
Function
Default
Gain Bi
+1
decimal
D15 (MSB)
0x01F
R/W
:
D0 (LSB)
Figure 48:
EEPROM Gain Bj 0x01A
Register
Hex
Access
Bit
D15 (MSB)
0x01A
R/W
:
Gain to the Bj value
Signed integer, range [-1;1]
D0 (LSB)
Figure 49:
EEPROM Gain Bi 0x01E
Register
Hex
Access
Bit
Note
D15 (MSB)
0x01E
R/W
:
Gain to the Bj value
Signed integer, range [-1;1]
D0 (LSB)
Page 40
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ams Datasheet
[v1-06] 2015-Aug-28
AS5403A/D/E − Device Configuration
Figure 50:
EEPROM Linearization Table 0x05F to 0x07F
Register
Hex
Access
Bit
Content
0x05F
Angle linearization table, value 16
0x060
Angle linearization table, value 0
0x061
Angle linearization table, value 1
:
Default
Note
0000
Signed integer
[-1;1]
…
0x06F
Angle linearization table, value 15
R/W
D15 to D0
0x070
Angle linearization table, value -16
0x071
Angle linearization table, value -15
:
…
0x07E
Angle linearization table, value -2
0x07F
Angle linearization table, value -1
Figure 51:
EEPROM Pre-Scale Linearization 0x1CF
Register
Hex
Access
Bit
Function
Default
Pre-Scale
linearization
Factor
+1
decimal
Function
Default
Post processing
offset
0
Note
D15 (MSB)
0x1CF
R/W
:
Signed integer [-8;8]
D0 (LSB)
Figure 52:
EEPROM Post-Processing Offset 0x1D0
Register
Hex
Access
Bit
Note
D15 (MSB)
0x1D0
R/W
:
Signed integer [-32768;32767]
D0 (LSB)
ams Datasheet
[v1-06] 2015-Aug-28
Page 41
Document Feedback
AS5403A/D/E − Device Configuration
Figure 53:
EEPROM Post-Processing Gain 0x1D1
Register
Hex
Access
Bit
Function
Default
Post processing
gain
+1
decimal
Function
Default
Clamp Low 1
-32768
decimal
Function
Default
Clamp High 1
32767
decimal
Note
D15 (MSB)
0x1D1
R/W
:
Signed integer [-4;4]
D0 (LSB)
Figure 54:
EEPROM Clamp Low 1 0x1D2
Register
Hex
Access
Bit
Note
D15 (MSB)
0x1D2
R/W
:
Signed integer [-32768;32767]
D0 (LSB)
Figure 55:
EEPROM Clamp High 1 0x1D3
Register
Hex
Access
Bit
Note
D15 (MSB)
0x1D3
R/W
:
Signed integer [-32768;32767]
D0 (LSB)
Figure 56:
EEPROM Clamp Low 2 and Clamp High 2 (LSBs) 0x1F5
Register
Hex
Access
Bit
Function
D15 (MSB)
:
0x1F5
Clamp High 2
(LSBs)
Default
Note
0
Clamp High 2 (LSBs) value for PWM
and analog output. DSW not
effected.
4 lower LSBs [0;16]
:
D12
0
D11
0
R/W
:
D0 (LSB)
Page 42
Document Feedback
Clamp Low 2
:
Clamp Low 2 value for PWM and
analog output. DSW not effected.
12 bit unsigned value [0;4096]
0
ams Datasheet
[v1-06] 2015-Aug-28
AS5403A/D/E − Device Configuration
Figure 57:
EEPROM Clamp High 2 (MSBs) 0x1F6
Register
Hex
Access
Bit
Function
D15 (MSB)
:
0x1F6
Default
Note
0
Reserved
:
D8
0
D7
0
R/W
:
0
Clamp High 2 (MSBs) value for PWM
and analog output. DSW not
effected.
8 higher MSBs [0;256]
Function
Default
Note
Angle Offset
0
Function
Default
Note
Customer Lock
0
EEPROM lock key region. When key
0x55AA is programmed --> no more
write access to complete EEPROM
Clamp High 2
(MSBs)
D0 (LSB)
:
Figure 58:
EEPROM Angle Offset 0x1F7
Register
Hex
Access
Bit
D15 (MSB)
0x1F7
R/W
:
Signed integer [-32768;32767]
D0 (LSB)
Figure 59:
EEPROM Customer Lock 0x1F8
Register
Hex
Access
Bit
D15 (MSB)
0x1F8
R/W
:
D0 (LSB)
ams Datasheet
[v1-06] 2015-Aug-28
Page 43
Document Feedback
AS5403A/D/E − Device Configuration
Figure 60:
EEPROM OUT Pin Configuration and PWM Frequency 0x1F9
Register
Hex
0x1F9
Access
R/W
Bit
Function
Default
D15 (MSB)
OUT FALL <1>
0
D14
OUT FALL <0>
0
D13
OUT RISE <1>
0
D12
OUT RISE <0>
0
D11
Reserved
0
D10
OUT CFG <2>
0
:
:
:
D8
OUT CFG <0>
0
D7
:
Threshold for the fall time check.
00 = no check
01 = 24 to 28 μs
10 = 56 to 60 μs
11 = 120 to 124 μs
Threshold for the rise time check.
00 = no check
01 = 24 to 28 μs
10 = 56 to 60 μs
11 = 120 to 124 μs
Output driver configuration OUT pin
0
Reserved
D3
Page 44
Document Feedback
Note
:
0
D2
DIAG_HIGH
0
D1
PWMF <1>
0
D0 (LSB)
PWMF <0>
0
Failure band selection internal errors
0=Failure band low
1= Failure band high
PWM frequency selection
00 = 1 kHz. Don’t use other settings
except AS5403E 11=0.125kHz in
case of Table Select = 10
ams Datasheet
[v1-06] 2015-Aug-28
AS5403A/D/E − Device Configuration
Figure 61:
EEPROM DSW Pin Configuration 0x1FA
Register
Hex
Access
Bit
Function
D15 (MSB)
:
R/W
ams Datasheet
[v1-06] 2015-Aug-28
Note
0
DSW SW POINT
<7:0>
D8
0x1FA
Default
:
Low byte of the switching point
0
D7
DSW FALL <1>
0
D6
DSW FALL <0>
0
D5
DSW RISE <1>
0
D4
DSW RISE <0>
0
D3
Reserved
0
D2
DSW CFG <2>
0
D1
:
0
D0 (LSB)
DSW CFG <0>
0
Threshold for the fall time check.
00 = no check
01 = 24 to 28 μs
10 = 56 to 60 μs
11 = 120 to 124 μs
Threshold for the rise time check.
00 = no check
01 = 24 to 28 μs
10 = 56 to 60 μs
11 = 120 to 124 μs
Output driver configuration DSW
pin. See Figure 23
Page 45
Document Feedback
AS5403A/D/E − Device Configuration
Figure 62:
EEPROM DSW Settings 0x1FB
Register
Hex
Access
Bit
Function
Default
D15 (MSB)
Reserved
0
D14
:
0
Reserved
0
D10
0x1FB
Note
0
D9
Reserved
0
D8
Reserved
0
D7
DSW_POL
0
D6
DSW HYST <2>
0
:
:
0
D4
DSW HYST <0>
0
D3
DSW SW POINT
<11>
0
:
:
:
D0 (LSB)
DSW SW POINT
<8>
0
R/W
Polarity:
0 = low level
1 = high level
DSW Hysteresis:
000 = 4 LSB; 001 = 8 LSB; 010 = 16
LSB; 011 = 32 LSB; 100 = 48 LSB;
101 = 64 LSB; 110 = 96 LSB;
111 =128 LSB; LSB are on 12 bits
Upper 4 bits of the switching point
Figure 63:
EEPROM Customer ID 0x1FC
Register
Hex
Access
Bit
Function
D15 (MSB)
:
0x1FC
Default
Note
0
CUST ID
:
D8
0
D7
0
Customer ID number 7 to 0
R/W
:
D0 (LSB)
Page 46
Document Feedback
CUST ID
:
Extended Byte
0
ams Datasheet
[v1-06] 2015-Aug-28
AS5403A/D/E − Device Configuration
Figure 64:
EEPROM Customer ID 0x1FD
Register
Hex
Access
Bit
Function
D15 (MSB)
0x1FD
R/W
:
Default
Note
0
CUST ID
D0 (LSB)
:
Customer ID number 23 to 8
0
Figure 65:
EEPROM Customer ID 0x1FE
Register
Hex
Access
Bit
Function
D15 (MSB)
0x1FE
R/W
:
Default
Note
0
CUST ID
D0 (LSB)
:
Customer ID number 39 to 24
0
Figure 66:
EEPROM Customer ID and Signature 0x1FF
Register
Hex
Access
Bit
Function
D15 (MSB)
:
0x1FF
Default
Note
0
EESIGN
:
D8
0
D7
0
EEPROM Signature
R/W
:
D0 (LSB)
ams Datasheet
[v1-06] 2015-Aug-28
CUST ID
:
Customer ID number 47 to 40
0
Page 47
Document Feedback
AS5403A/D/E − Device Configuration
Register Memory Map
Note(s): Register Memory Map Write 0x0100 hex to register
address 0x2FF (START DSP = 1) before a read of following
registers.
Figure 67:
Register Map
Address (Hex)
Page 48
Document Feedback
Register Location Name
0x2FF
Control DSP
0x300
Error Register 1
0x301
Position 2
0x302
Error Register 2
0x510
Temperature
0x511
Measurement Value 1 (MV 1)
0x512
Measurement Value 2 (MV 2)
0x513
Measurement Value 3 (MV 3)
0x514
Measurement Value 4 (MV 4)
0x520
Magnitude
0x521
Angle (not linearized)
0x522
Angle linearized
0x547
Position 1
0x548
Bi component
0x549
Bj component
0x54B
Bi’ component
0x54C
Bj’ component
0x54D
Bk (unused)
ams Datasheet
[v1-06] 2015-Aug-28
AS5403A/D/E − Device Configuration
Figure 68:
Control DSP 0x2FF
Register
Hex
Access
Bit
Function
Note
D15 (MSB)
:
Reserved
D12
D11
0x2FF
R/W
PASS2FUNC
Activation for functional mode of the output.
D10
FREEZE
When CAL_EN=1 it enables the 3D Hall Core for 1
only measurement (automatically cleared at the
end of the measurement). Used For SPI calibration
in communication mode. When CAL_EN=0 it
freezes the read SFR content
D9
CAL_EN
Enable the calibration procedure. Used in
communication mode.
D8
START_DSP
Start the 3D Hall Core. Used in communication
mode to start the DSP measurements.
D7
:
Reserved
D4
ams Datasheet
[v1-06] 2015-Aug-28
D3
EE_RESET
Force EEPROM reset. Used in communication
mode.
D2
EE_DWNL
Force EEPROM download. Used in communication
mode.
D1
CFG_EPP <1>
D0 (LSB)
CFG_EPP <0>
EEPROM programming mode:
00: no EEPROM permanent write; 11: permanent
write of the current EEPROM page (bits CFG_EPP
are automatically cleared); 01: permanent write
after each EEPROM write command.
Page 49
Document Feedback
AS5403A/D/E − Device Configuration
Figure 69:
Error Register 1 0x300
Register
Hex
0x300
Access
R
Bit
Function
D15 (MSB)
Reserved
Note
D14
MgnLost
Magnet Lost: it indicates that Magnitude is
below the configured threshold (magnet is too
far away) (EEPROM 0x00F)
D13
DiPaSeMo
Digital Part Self-Monitoring fail: it indicates that
the digital part self-monitoring detected an
error.
D12
NrmOvfl
Normalization Overflow: it indicates the
multiplier overflow during normalization.
D11
SensOvfl
Sensitivity Correction Overflow: it indicates the
Multiplier overflow during sensitivity correction
over temperature
D10
RngWarn
Range Warning: it indicates that the ADC input
signal exceeds the input range.
D9
Reserved
D8
CalcError
D7
Reserved
D6
SLOvfl
Linearization Overflow: it indicates that the
multiplication in front of the linearization
saturated.
D5
GainSat
Gain Multiplication Saturation: it indicates that
the result of the gain multiplication saturated.
D4
ClampStatus 1
Clamp Status 1: it indicates that the
post-processing used the clamping values to
limit the output value.
D3
ClampStatus 2
Clamp Status 2: it indicates that the unsigned
post-processing used the clamping values to
limit the PWM/Analog value.
Calculation Error: it indicates that an overflow in
post-processing calculations occurred.
D2
:
Reserved
D0 (LSB)
Page 50
Document Feedback
ams Datasheet
[v1-06] 2015-Aug-28
AS5403A/D/E − Device Configuration
Figure 70:
Error Register 2 0x302
Register
Hex
Access
Bit
Function
Note
D15 (MSB)
:
Reserved
D11
0x302
D10
WD_ERR
D9
DWL_BIST_ER
EEPROM signature error is generated during the
download into SFR mirror
D8
TST_ERR
Signature error on TEST SFR (they should be at 0
during functional mode
D7
SYNCH_ERR
Synchronization error between 3D Hall Core data
rate and PWM frequency
D6
Reserved
D5
RD_BACK_ERR2
Read back error on DSW pin
D4
RD_BACK_ERR1
Read back error on OUT pin
D3
Reserved
D2
DSW_SHORT
Short circuit error on DSW pin
D1
PWM_SHORT
Short circuit error on OUT pin
D0 (LSB)
BIST_ERR
R
Watchdog error
EEPROM signature error
Figure 71:
Register Temperature 0x510
Register
Hex
Access
Bit
Function
Note
D15 (MSB)
0x510
R
:
Temperature
Temperature [°C] = (17325 + value [LSB])/ 315
D0 (LSB)
ams Datasheet
[v1-06] 2015-Aug-28
Page 51
Document Feedback
AS5403A/D/E − Device Configuration
Figure 72:
Register Measurement Value 1to 4 MV1 to MV4 0x511, 0x512, 0x513, 0x514
Register
Hex
0x511
0x512
0x513
0x514
Access
Bit
Function
D15 (MSB)
MV1
MV2
MV3
MV4
R
:
D0 (LSB)
Note
Measurement values of 3D Hall Pixels
Figure 73:
Register Magnitude 0x520
Register
Hex
Access
Bit
Function
Note
D15 (MSB)
0x520
R
:
Magnitude
Magnitude information after ATAN calculation
D0 (LSB)
Figure 74:
Register Angle not Linearized 0x521
Register
Hex
Access
Bit
Function
Note
D15 (MSB)
0x521
R
:
Angle
Angle information after CORDIC calculation
D0 (LSB)
Figure 75:
Register Angle Linearized 0x522
Register
Hex
Access
Bit
Function
Note
D15 (MSB)
0x522
R
:
Angle
linearized
Angle information after linearization.
16 bit linearized output
D0 (LSB)
Page 52
Document Feedback
ams Datasheet
[v1-06] 2015-Aug-28
AS5403A/D/E − Device Configuration
Figure 76:
Register Position 1 0x547
Register
Hex
Access
Bit
Function
Note
D15 (MSB)
0x547
R
:
Position 1
Position 1 value signed output
D0 (LSB)
Figure 77:
Register Position 2 0x301
Register
Hex
Access
Bit
Function
Note
D15 (MSB)
0x301
R
:
Position 2
Position 2 value unsigned output
12 bit number MSBs = zero
D0 (LSB)
Figure 78:
Register Bi Component 0x548
Register
Hex
Access
Bit
Function
Note
Bi
Magnetic field component Bi. Content dependant on
sequencer control settings and table selection
D15 (MSB)
0x548
R
:
D0 (LSB)
Figure 79:
Register Bj Component 0x549
Register
Hex
Access
Bit
Function
Note
D15 (MSB)
0x549
R
:
Bj
Magnetic field component Bj. Content dependant on
sequencer control settings and table selection
D0 (LSB)
ams Datasheet
[v1-06] 2015-Aug-28
Page 53
Document Feedback
AS5403A/D/E − Device Configuration
Figure 80:
Register Bi’ Component 0x54B
Register
Hex
Access
Bit
Function
Note
Bi‘
Magnetic field component Bi’. Content dependant on
sequencer control settings and table selection
D15 (MSB)
0x54B
R
:
D0 (LSB)
Figure 81:
Register Bj’ Component 0x54C
Register
Hex
Access
Bit
Function
Note
Bj‘
Magnetic field component Bj’. Content dependant on
sequencer control settings and table selection
D15 (MSB)
0x54C
R
:
D0 (LSB)
Temperature Sensor
The on chip temperature sensor can be used to gain rough
information about the ambient temperature. The SPI interface
is mandatory when this information shall be used.
Figure 82:
Temperature Sensor
Parameter
Temperature Signal
Temperature Sensor Resolution
Page 54
Document Feedback
Conditions
@ 0°C
Min
Typ
Max
Unit
-17325
LSB
315
LSB/K
ams Datasheet
[v1-06] 2015-Aug-28
AS5403A/D/E − Device Configuration
Protections
When the voltage applied to the VDD pin falls below the
undervoltage lower threshold (VDDUVTL) for longer than the
TVDDUVDET time the device stops the clock of the digital part,
it resets the EEPROM signature calculation and the 3D Hall core
and the output drivers are turned off to reduce the power
consumption. When the voltage applied to the VDD pin exceeds
the VDD undervoltage upper threshold (VDDUVTH) for longer
than the TVDDUVREC time the clock, the signature calculation
and the 3D Hall core are restarted and the output drivers are
turned ON.
Figure 83:
Single Wire Bit Timing
Symbol
Parameter
Min
Typ
Max
Unit
VDDUVTH
VDD Undervoltage Upper Threshold
3.7
4.1
4.5
V
VDDUVTL
VDD Undervoltage Lower Threshold
3.3
3.7
4.1
V
TVDDUVDET
VDD Undervoltage Detection Time
10
250
μs
TVDDUVREC
VDD Undervoltage Recovery Time
10
250
μs
ams Datasheet
[v1-06] 2015-Aug-28
Page 55
Document Feedback
AS5403A/D/E − Device Configuration
Sensor Placement
Two 3D Hall pixels each with an X-/Y-/Z-sensor are arranged in
a line on the X-axis parallel to the chip edge, 2.5mm distant from
each other.
3D Hall pixel positions relative to chip centre are:
Pixel 1: -1250 μm
Pixel 0: 1250 μm
Figure 84:
3D Hall Pixel Arrangement
1.25 mm
1.25 mm
3D Hall
Pixel 0
3D Hall
Pixel 1
m
m
5
3
.2
0
±:
ec
n
ar
el
o
T
2.5 mm
1
Tolerance: ± 0.235 mm
Page 56
Document Feedback
ams Datasheet
[v1-06] 2015-Aug-28
AS5403A/D/E − Package Drawings & Markings
Package Drawings & Markings
Figure 85:
Pixel Cell Placement
Note(s) and/or Footnote(s):
1. All dimensions in mm.
2. Die thickness 203μm nom.
3. Adhesive thickness 30 ± 15μm.
4. Leadframe downest 152 ± 25μm.
5. Leadframe thickness 125 ± 8μm.
ams Datasheet
[v1-06] 2015-Aug-28
Page 57
Document Feedback
AS5403A/D/E − Package Drawings & Markings
Figure 86:
14-Lead Thin Shrink Small Outline Package TSSOP-14
Symbol
Min
Nom
Max
Symbol
Min
Nom
Max
A
A1
A2
b
c
D
E
E1
e
L
L1
0.05
0.80
0.19
0.09
4.90
4.30
0.45
-
1.00
5.00
6.40 BSC
4.40
0.65 BSC
0.60
1.00 REF
1.20
0.15
1.05
0.30
0.20
5.10
4.50
0.75
-
R
R1
S
Θ1
Θ2
Θ3
aaa
bbb
ccc
ddd
N
0.09
0.09
0.20
0°
-
12REF
12 REF
0.10
0.10
0.05
0.20
14
8°
-
RoHS
Green
Note(s) and/or Footnote(s):
1. Dimensions & toleranceing confirm to ASME Y14.5M-1994.
2. All dimensions are in millimeters. Angles are in degrees.
3. N is the total number of terminals.
Page 58
Document Feedback
ams Datasheet
[v1-06] 2015-Aug-28
AS5403A/D/E − Package Drawings & Markings
Figure 87:
TSSOP-14 Marking
5403A @
YYWWMZZ
5403D @
YYWWMZZ
5403E @
YYWWMZZ
Figure 88:
Packaging Code: @YYWWMZZ
@
YY
WW
M
ZZ
Sublot identifier
Year
Manufacturing Week
Assembly plant identifier
Assembly traceability code
ams Datasheet
[v1-06] 2015-Aug-28
Page 59
Document Feedback
AS5403A/D/E − Ordering & Contact Information
Ordering & Contact Information
The device is available as the standard products shown in
Figure 89.
Figure 89:
Ordering Information
Ordering Code
Package
AS5403A-HTST
Absolute Linear Position
Sensor with ±50 mT magnetic
input range Bx/Bz
AS5403A-HTSM
AS5403D-HTST
TSSOP-14
AS5403D-HTSM
AS5403E-HTST
AS5403E-HTSM
Description
Absolute Linear Position
Sensor with ±100 mT magnetic
input range Bx/Bz
Off-Axis Position Sensor with
±100 mT magnetic input range
Bx/By
±100 mT magnetic input range
Bx/Bz
Delivery Form
Delivery
Quantity
13" Tape & Reel
in dry pack
4500
7" Tape & Reel
in dry pack
500
13" Tape & Reel
in dry pack
4500
7" Tape & Reel
in dry pack
500
13" Tape & Reel
in dry pack
4500
7" Tape & Reel
in dry pack
500
Buy our products or get free samples online at:
www.ams.com/ICdirect
Technical Support is available at:
www.ams.com/Technical-Support
Provide feedback about this document at:
www.ams.com/Document-Feedback
For further information and requests, e-mail us at:
[email protected]
For sales offices, distributors and representatives, please visit:
www.ams.com/contact
Headquarters
ams AG
Tobelbaderstrasse 30
8141 Unterpremstaetten
Austria, Europe
Tel: +43 (0) 3136 500 0
Website: www.ams.com
Page 60
Document Feedback
ams Datasheet
[v1-06] 2015-Aug-28
AS5403A/D/E − RoHS Compliant & ams Green Statement
RoHS Compliant & ams Green
Statement
RoHS: The term RoHS compliant means that ams AG products
fully comply with current RoHS directives. Our semiconductor
products do not contain any chemicals for all 6 substance
categories, including the requirement that lead not exceed
0.1% by weight in homogeneous materials. Where designed to
be soldered at high temperatures, RoHS compliant products are
suitable for use in specified lead-free processes.
ams Green (RoHS compliant and no Sb/Br): ams Green
defines that in addition to RoHS compliance, our products are
free of Bromine (Br) and Antimony (Sb) based flame retardants
(Br or Sb do not exceed 0.1% by weight in homogeneous
material).
Important Information: The information provided in this
statement represents ams AG knowledge and belief as of the
date that it is provided. ams AG bases its knowledge and belief
on information provided by third parties, and makes no
representation or warranty as to the accuracy of such
information. Efforts are underway to better integrate
information from third parties. ams AG has taken and continues
to take reasonable steps to provide representative and accurate
information but may not have conducted destructive testing or
chemical analysis on incoming materials and chemicals. ams AG
and ams AG suppliers consider certain information to be
proprietary, and thus CAS numbers and other limited
information may not be available for release.
ams Datasheet
[v1-06] 2015-Aug-28
Page 61
Document Feedback
AS5403A/D/E − Copyrights & Disclaimer
Copyrights & Disclaimer
Copyright ams AG, Tobelbader Strasse 30, 8141
Unterpremstaetten, Austria-Europe. Trademarks Registered. All
rights reserved. The material herein may not be reproduced,
adapted, merged, translated, stored, or used without the prior
written consent of the copyright owner.
Devices sold by ams AG are covered by the warranty and patent
indemnification provisions appearing in its General Terms of
Trade. ams AG makes no warranty, express, statutory, implied,
or by description regarding the information set forth herein.
ams AG reserves the right to change specifications and prices
at any time and without notice. Therefore, prior to designing
this product into a system, it is necessary to check with ams AG
for current information. This product is intended for use in
commercial applications. Applications requiring extended
temperature range, unusual environmental requirements, or
high reliability applications, such as military, medical
life-support or life-sustaining equipment are specifically not
recommended without additional processing by ams AG for
each application. This product is provided by ams AG “AS IS”
and any express or implied warranties, including, but not
limited to the implied warranties of merchantability and fitness
for a particular purpose are disclaimed.
ams AG shall not be liable to recipient or any third party for any
damages, including but not limited to personal injury, property
damage, loss of profits, loss of use, interruption of business or
indirect, special, incidental or consequential damages, of any
kind, in connection with or arising out of the furnishing,
performance or use of the technical data herein. No obligation
or liability to recipient or any third party shall arise or flow out
of ams AG rendering of technical or other services.
Page 62
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ams Datasheet
[v1-06] 2015-Aug-28
AS5403A/D/E − Document Status
Document Status
Document Status
Product Preview
Preliminary Datasheet
Datasheet
Datasheet (discontinued)
ams Datasheet
[v1-06] 2015-Aug-28
Product Status
Definition
Pre-Development
Information in this datasheet is based on product ideas in
the planning phase of development. All specifications are
design goals without any warranty and are subject to
change without notice
Pre-Production
Information in this datasheet is based on products in the
design, validation or qualification phase of development.
The performance and parameters shown in this document
are preliminary without any warranty and are subject to
change without notice
Production
Information in this datasheet is based on products in
ramp-up to full production or full production which
conform to specifications in accordance with the terms of
ams AG standard warranty as given in the General Terms of
Trade
Discontinued
Information in this datasheet is based on products which
conform to specifications in accordance with the terms of
ams AG standard warranty as given in the General Terms of
Trade, but these products have been superseded and
should not be used for new designs
Page 63
Document Feedback
AS5403A/D/E − Revision Information
Revision Information
Changes from 1-04 (2015-Apr-07) to current revision 1-06 (2015-Aug-27)
Page
1-04 (2015-Apr-07) to 1-05(2015-Aug-04)
Removed content related to AS5403B
1-05 (2015-Aug-04) to 1-06(2015-Aug-27)
Updated Figure 7
7
Updated Figure 14
15
Updated Sensor Placement section
56
Added Figure 85
57
Updated Figure 86
58
Note(s) and/or Footnote(s):
1. Page and figure numbers for the previous version may differ from page and figure numbers in the current revision.
2. Correction of typographical errors is not explicitly mentioned.
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[v1-06] 2015-Aug-28
AS5403A/D/E − Content Guide
Content Guide
ams Datasheet
[v1-06] 2015-Aug-28
1
2
2
4
General Description
Key Benefits & Features
Applications
Block Diagram
5
Pin Assignments
7
7
8
9
10
10
14
15
Electrical Characteristics
Absolute Maximum Ratings
Operating Conditions
Magnetic Sensor Conditions
DC/AC Characteristics for Digital Pads
Output Driver Parameters
SPI Timing
UART Timing
16
16
17
18
Functional Description
Signal Processing Path Front
Internal Calculation Formulas
Signal Processing Path Backend
19
20
Operation
External Components
21
Built-In Safety
22
23
26
Output Drivers
PWM Output
Digital Switch
28
28
29
4-Wire Serial Peripheral Interface (SPI)
Write (0)
Read (1)
30
30
30
32
33
33
34
34
Programming the AS5403
UART Interface for Programming
Frame Organization
Write Command
Read Command
BAUD RATE Automatic Detection
Programming Procedure
Lock Procedure and Signature Calculation
35
35
48
54
55
56
Device Configuration
EEPROM Memory Map
Register Memory Map
Temperature Sensor
Protections
Sensor Placement
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AS5403A/D/E − Content Guide
57
60
61
62
63
64
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Package Drawings & Markings
Ordering & Contact Information
RoHS Compliant & ams Green Statement
Copyrights & Disclaimer
Document Status
Revision Information
ams Datasheet
[v1-06] 2015-Aug-28