RENESAS HSC285

HSC285
Silicon Schottky Barrier Diode for High frequency detection
REJ03G0011-0100Z
Rev.1.00
Apr.16.2003
Features
• Low forward voltage, Low capacitance and High detection sensitivity.
• Ultra small Flat Package (UFP) is suitable for surface mount design.
Ordering Information
Type No.
Laser Mark
Package Code
HSC285
C4
UFP
Pin Arrangement
Cathode mark
Mark
1
C4
2
1. Cathode
2. Anode
Rev.1.00, Apr.16.2003, page 1 of 5
HSC285
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
Unit
Reverse voltage
VR
2
V
Average rectified current
IO
5
mA
Junction temperature
Tj
125
°C
Storage temperature
Tstg
–55 to +125
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
VF1
—
—
0.15
V
IF = 0.1 mA
VF2
—
—
0.27
Capacitance
C
—
0.3
—
pF
VR = 1 V, f = 1 MHz
—
10
—
—
V
C = 200 pF, RL = 0 Ω, Both forward and
reverse direction 1 pulse.
1
ESD-Capability *
Note:
1. Failure criterion ; IR > 100 µA at VR = 0.5 V
Rev.1.00, Apr.16.2003, page 2 of 5
IF = 1 mA
HSC285
10–2
10–2
10–3
10–3
Reverse current IR (A)
Forward current IF (A)
Main Characteristic
10–4
10–5
10–6
0
0.1
0.2
0.3
0.4
0.5
10–4
Ta = 25°C
10–5
10–6
0
1
2
3
4
5
Forward voltage VF (V)
Reverse voltage VR (V)
Fig.1 Forward current vs. Forward voltage
Fig.2 Reverse current vs. Reverse voltage
f = 1MHz
10
Capacitance C (pF)
Ta = 75°C
1.0
0.1
0.1
1.0
10
Reverse voltage VR (V)
Fig.3 Capacitance vs. Reverse voltage
Rev.1.00, Apr.16.2003, page 3 of 5
HSC285
Package Dimensions
As of January, 2003
1.2 ± 0.10
0.13 ± 0.05
1.6 ± 0.10
0.6 ± 0.10
0.3 ± 0.05
0.8 ± 0.10
Unit: mm
Package Code
JEDEC
JEITA
Mass (reference value)
Rev.1.00, Apr.16.2003, page 4 of 5
UFP
—
Conforms
0.0016 g
HSC285
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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