2SD2652 Transistors General purpose amplification (12V, 1.5A) 2SD2652 2.0 1.3 0.9 (1) (2) 0.65 0.65 (3) 0.3 !Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) ≤ 200mV At IC = 500mA / IB = 25mA 0.7 !External dimensions (Units : mm) !Application Low frequency amplifier 1.25 0.1Min. 0~0.1 0.15 0.2 2.1 Each lead has same dimensions ROHM : UMT3 Abbreviated symbol : EW EIAJ : SC-70 JEDEC : SOT-323 !Packaging specifications !Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 6 V IC 1.5 A ICP 3 Power dissipation PC 200 mW Junction temperature Tj 150 °C Tstg −55~+150 °C Collector current Range of storage temperature (1) Emitter (2) Base (3) Collector Package Type Taping Code T106 Basic ordering unit (pieces) 3000 2SD2652 A ∗ ∗Single pulse, PW=1ms !Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 15 − − V IC=10µA Collector-emitter breakdown voltage BVCEO 12 − − V IC=1mA Emitter-base breakdown voltage BVEBO 6 − − V IE=10µA ICBO − − 100 nA VCB=15V Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Corrector output capacitance ∗1 Pulsed IEBO − − 100 nA VEB=6V VCE(sat) − 80 200 mV IC/IB=500mA/25mA hFE 270 − 680 − VCE/IC=2V/200mA fT − 400 − Cob − 12 − ∗1 MHz VCE=2V, IE=−200mA, f=100MHz ∗1 pF VCB=10V, IE=0A, f=1MHz 2SD2652 Transistors BASE SATURATION VOLTAGE : VBE (sat) (V) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 1000 Ta=25°C Ta=−40°C 100 VCE=2V Pulsed 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current 1 Ta=100°C Ta=25°C Ta=−40°C 0.01 0.001 0 0.5 1.0 Ta=−40°C Ta=25°C Ta=100°C 1 Ta=100°C 0.1 Ta=25°C Ta=−40°C VCE(sat) 0.01 0.001 0.001 0.01 100 VCE=2V Ta=25°C Pulsed −0.01 −0.1 −1 1 10 s 1m ms n COLLECTOR CURRENT : IC (A) tf 0.1 1 Fig.6 Switching time tio era 1 tdon COLLECTOR CURRENT : IC (A) ms Op Ta=25°C Single Pulse 0.01 0.01 0.1 10 tr 00 0.1 tstg 100 1 0.01 −10 10 1 DC Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 0.1 Fig.3 Collector-emitter saturation voltage vs. collector current =1 100 EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR TO BASE VOLTAGE : VCB (V) 0.01 COLLECTOR CURRENT : IC (A) PW EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 0.001 0.001 10 10 IC/IB=20/1 IC/IB=10/1 Fig.5 Gain bandwidth product vs. emitter current IE=0A f=1MHz Ta=25°C 10 IC/IB=50/1 0.01 EMITTER CURRENT : IE (A) Cob 1 10 0.1 Ta=25°C VCE=2V f=100MHz Fig.4 Grounded emitter propagation characteristics 1 0.1 1 Ta=25°C VCE=2V 1000 10 −0.001 1.5 Cib 0.1 COLLECTOR CURRENT : IC (A) BASE TO EMITTER VOLTAGE : VBE (V) 100 VBE(sat) 1 1000 VCE=2V Pulsed 0.1 =20/1 IC/IB=20 Pulsed Fig.2 Collector-emitter saturation voltage base-emitter saturation voltage vs. collector current TRANSITION FREQUENCY : fT (MHz) COLLECTOR CURRENT : IC (A) 10 10 SWITCHING TIME : (ns) DC CURRENT GAIN : hFE Ta=100°C COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) !Electrical characteristic curves 10 100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.8 Safe Operating Area 10 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0