RB160M-40 Diodes Schottky barrier diode RB160M-40 z Land size figure (Unit : mm) zDimensions (Unit : mm) zApplications General rectification 0.1±0.1 0.05 1.2 0.85 1.6±0.1 2.6±0.1 ① 3.5±0.2 3.05 zFeatures 1) Small power mold type. (PMDS) 2) Low IR. 3) High reliability. PMDU zStructure zConstruction Silicon epitaxial planar 0.9±0.1 0.8±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date z Taping specifications (Unit : mm) 1.81±0.1 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz・1cyc) Junction temperature Storage temperature 4.0±0.1 8.0±0.2 φ1.0±0.1 1.5MAX Limits 40 40 1 30 150 -40 to +150 Symbol VRM VR Io IFSM Tj Tstg 3.71±0.1 0.25±0.05 1.75±0.1 φ1.55±0.05 2.0±0.05 3.5±0.05 4.0±0.1 Unit V V A A ℃ ℃ (*1)Mounted on epoxy board. 180°Half sine wave zElectrical characteristics (Ta=25°C) Parameter Symbol Forward voltage VF Min. - Reverse current IR - Typ. 0.46 Max. 0.51 Unit V 4.0 30 µA Conditions IF=1.0A VR=40V Rev.E 1/3 RB160M-40 Diodes zElectrical characteristic curves (Ta=25°C) 1000 10000 Ta=25℃ Ta=-25℃ 10 1 200 300 400 500 100 10 Ta=25℃ 1 0.1 Ta=-25℃ 0.01 450 AVE:454.3mV 440 5 10 15 20 25 30 35 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 15 10 AVE:4.08uA 5 280 270 AVE:279.7pF 260 100 AVE:83.0A 230 220 Ct DISPERSION MAP 100 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 10 AVE:10.4ns 5 80 60 40 Ifsm 20 8.3ms 8.3ms 1cyc 0 0 0 1 trr DISPERSION MAP IFSM DISRESION MAP 1000 Ifsm t 150 100 50 0 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 IM=10mA 100 1 IF=0.5A 0.9 Rth(j-a) 100 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS Mounted on epoxy board 1ms 0.8 time 300us Rth(j-c) 10 1 FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 200 Ta=25℃ f=1MHz VR=0V n=10pcs 240 PEAK SURGE FORWARD CURRENT:IFSM(A) RESERVE RECOVERY TIME:trr(ns) 8.3ms 30 200 30 150 25 250 IR DISPERSION MAP 1cyc 20 210 VF DISPERSION MAP Ifsm 15 290 20 200 10 300 0 50 5 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS Ta=25℃ VR=40V n=30pcs 25 430 PEAK SURGE FORWARD CURRENT:IFSM(A) 0 40 30 REVERSE CURRENT:IR(uA) FORWARD VOLTAGE:VF(mV) 480 460 10 1 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 470 100 0.001 600 Ta=25℃ VF=1A n=30pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=150℃ 100 f=1MHz Ta=75℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 0 1000 Ta=125℃ 1000 Ta=125℃ REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) Ta=75℃ D=1/2 0.7 0.6 DC Sin(θ＝180) 0.5 0.4 0.3 0.2 0.1 0 0.1 0.001 0.01 0.1 1 10 TIME:t(s) Rth-t CHARACTERISTICS 100 1000 0 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS Rev.E 2 2/3 RB160M-40 Diodes 0.05 3 0.03 DC 0.02 D=1/2 0.01 Sin(θ＝180) 0 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 40 2 t DC T AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 0.04 3 Io 0A 0V 2.5 VR D=t/T VR=20V Tj=150℃ 1.5 D=1/2 1 0.5 Sin(θ＝180) 0A 0V 2.5 2 DC Io t T VR D=t/T VR=20V Tj=150℃ 1.5 D=1/2 1 0.5 Sin(θ＝180) 0 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 150 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 30 ELECTROSTATIC DISCHARGE TEST ESD(KV) No break at 30kV 25 20 15 10 5 AVE:7.30kV 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP Rev.E 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2008 ROHM CO.,LTD. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0