RB161M-20 Diodes Schottky barrier diode RB161M-20 zApplications General rectification zLand size figure zExternal dimensions (Unit : mm) 0.1±0.1 0.05 1.2 0.85 1.6±0.1 3.5±0.2 ① 2.6±0.1 3.05 zFeatures 1) Power mold type. (CPD3) 2) Low VF 3) High reliability PMDU zConstruction Silicon epitaxial planar zStructure 0.9±0.1 0.8±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date zTaping dimensions (Unit : mm) 1.81±0.1 zAbsolute maximum ratings (Ta=25°C) Parameter Symbol VRM VR Io IFSM Tj Tstg Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak Junction temperature Storage temperature 4.0±0.1 8.0±0.2 3.71±0.1 0.25±0.05 1.75±0.1 φ1.55±0.05 2.0±0.05 3.5±0.05 4.0±0.1 φ1.0±0.1 Limits 1.5MAX Unit V V A A ℃ ℃ 25 20 1 30 125 -40 to +125 (*1)Mounted on epoxy board. 180°Half sine wave zElectrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Symbol VF1 VF2 Min. - Typ. 0.28 0.31 Max. 0.32 0.35 Unit V V IR - 280 700 µA Conditions IF=0.5A IF=1.0A VR=20V Rev.B 1/3 RB161M-20 Diodes zElectrical characteristic curves 1 1000 1000000 Ta=75℃ Ta=125℃ Ta=25℃ 0.1 Ta=-25℃ 0.01 1000 Ta=25℃ 100 Ta=-25℃ 10 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 600 0 5 10 15 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 0 REVERSE CURRENT:IR(uA) 340 330 AVE:311.1mV 320 310 700 600 500 400 300 200 AVE:283.1uA 100 370 360 350 340 330 320 AVE:351.2pF 300 IR DISPERSION MAP 150 Ct DISPERSION MAP 100 1cyc Ifsm 8.3ms 50 AVE:65.0A Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 10 5 AVE:11.7ns PEAK SURGE FORWARD CURRENT:IFSM(A) RESERVE RECOVERY TIME:trr(ns) 30 100 380 310 0 VF DISPERSION MAP 0 0 Ifsm 8.3ms 8.3ms 1cyc 50 0 1 trr DISPERSION MAP IFSM DISRESION MAP t 100 50 0 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 100 Mounted on epoxy board 0.8 Rth(j-a) 100 Rth(j-c) IM=100mA IF=1A 10 1ms 0.1 0.6 D=1/2 DC Sin(θ＝180) 0.4 0.2 time 300us 1 0.001 FORWARD POWER DISSIPATION:Pf(W) Ifsm 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 1 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 150 30 Ta=25℃ f=1MHz VR=0V n=10pcs 390 Ta=25℃ VR=20V n=30pcs 800 300 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 400 900 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ IF=1A n=30pcs 10 20 1000 350 100 1 1 0 FORWARD VOLTAGE:VF(mV) Ta=75℃ 10000 0.001 PEAK SURGE FORWARD CURRENT:IFSM(A) f=1MHz 100000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) Ta=125℃ 0 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS Rev.B 2 2/3 RB161M-20 Diodes 3 REVERSE POWER DISSIPATION:PR (W) 4 3 2 D=1/2 DC 1 Sin(θ＝180) 0 0 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 3 0A 0V 2.5 2 Io t DC T 1.5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 5 VR D=t/T VR=10V Tj=125℃ D=1/2 1 0.5 0A 0V 2.5 2 DC 1.5 T Io VR D=t/T VR=10V Tj=125℃ D=1/2 1 0.5 Sin(θ＝180) Sin(θ＝180) 0 t 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 0 25 50 75 100 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 125 30 No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 20 15 10 5 AVE:6.90kV 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1