Applications • Mixer and detector Features • Low capacitance for usage beyond 40 GHz • ZBD and low barrier designs • P-type and N-type junctions • Large bond pad chip design • Chip products are Skyworks Green™ Silicon Schottky Diodes Skyworks broad product portfolio includes Schottky diodes as packaged and bondable silicon chips, in addition to ceramic hermetic, chip on board, beam-lead, flip chip and plastic surface mount packaged devices for mixer or detector applications. Skyworks series of Silicon Schottky diodes, CDB7619-000, CDB7620-000, CDB7630000, CDB7631-000, CDB7621-000 and CDB7623-000 are optimized for use as detector and mixer diodes at frequencies from below 100 MHz to higher than 40 GHz. This family of products includes low and “zero bias detector (ZBD)” barrier height Schottky junctions with low junction capacitance and low series resistance. Schottky junctions are formed by depositing specific metals on either n-type-doped silicon (low barrier height) or on p-typedoped silicon (low or ZBD barrier height). The characteristics of the diode are determined by the type of metal deposited on the semiconductor material as well as the type of dopant in the semiconductor layer, among other parameters Skyworks “Universal Chip” design features a 4-mil-diameter bond pad that is offset from the Schottky junction, preventing damage to the active junction that might occur as a result of wire bonding. Applications As power-sensing detectors, these Schottky diode chips all have the same voltage sensitivity so long as the output video impedance is much higher than the video resistance of the diode. Figure 1 shows the expected detected voltage sensitivity as a function of RF source impedance in an untuned circuit. Note that sensitivity is substantially increased by transforming the source impedance from 50 W to higher values. Maximum sensitivity occurs when the source impedance equals the video resistance. In a detector circuit operating at zero bias, depending on the video load impedance, a ZBD device with RV less than 10 kW may be more sensitive than a low-barrier diode with RV greater than 100 kW. Applying forward bias reduces the diode video resistance as shown in Figure 2. Lower video resistance also increases the video bandwidth but does not increase voltage sensitivity, as shown in Figure 3. Biased Schottky diodes have better temperature stability and also may be used in temperature compensated detector circuits. P-type Schottky diodes generate lower 1/F noise and are preferred for Doppler mixers and biased detector applications. The bond pad for the P-type Schottky diode is the cathode. N-type Schottky diodes have lower parasitic resistance, RS, and will perform with lower conversion loss in mixer circuits. The bond pad for the N-type Schottky diode is the anode. BUY NOW Innovation to GoTM New! Free Designer Kits Select products and sample/designer kits available for purchase online. www.skyworksinc.com Electrical Specifications at 25 °C Barrier ZBD Junction Type P CJ(1) (pF) Max. 0.25 CDC7631-000 ZBD P 0.15 80 150–300 2 7.2 571-006 CDB7619-000 Low P 0.1 40 275–375 2 735 571-006 CDB7620-000 Low P 0.15 30 250–350 2 537 571-006 CDF7621-000 Low N 0.1 20 270–350 2 680 571-011 CDF7623-000 Low N 0.3 10 240–300 2 245 571-011 Part Number CDC7630-000 RT(2) (W) Max. 30 VF @ 1 mA (mV) Min.–Max. 135–240 VB(3) (V) Min. 1 RV @ Zero Bias (kW) Typ. 5.5 Outline Drawing 571-006 1. CJ for low barrier diodes specified at 0 V. CJ for ZBDs specified at 0.15 V reverse bias. 2. RT is the slope resistance at 10 mA. RS Max. may be calculated from: RS = RT - 2.6 x N. 3. VB for low barrier diodes is specified at 10 µA. VB for ZBDs is specified at 100 µA. Typical Performance Data 10000 0 dBm +10 dBm 1000 1000 Detected Voltage (mV) Detected Voltage (mV) 10000 500 W 100 200 W 100 W 50 W 10 25 W 1 100 10 1 -20 dBm -30 dBm 0.1 -10dBm 0.01 0.1 -40 -30 -20 -10 0 10 0.001 0.001 0.01 0.1 1 10 Forward Current (mA) Input Power (dBm) vs. Forward FigureDetected 3. Detected Voltage Voltage vs. Forward Current Detected Voltage vs. Input Figure 1. Detected Voltage vs. Input Power and RF Source Impedance Current Power and RF Source Impedance Video Resistance (W) 100000 RF Source Impedance Low Barrier PINPUT Detector Voltage RFC 10000 ZBD Video Load Impedance Zero Biased Detector 1000 100 1 10 100 RF Source Impedance PINPUT RFC Forward Bias (µA) Video Resistance vs. Figure 2. Video Resistance vs. Forward Bias Current Forward Bias Current Biased Detector Detector Voltage Video Load Impedance Outline Drawings -203 571-006 (Cathode Bond Pad), 571-011 (Anode Bond Pad) Schematic N-Type Cathode/Bonding Pad Diameter 0.0035–0.0045 0.050 (1.27 mm) 0.040 (1.02 mm) 0.013 (0.33 mm) 0.011 (0.28 mm) 0.055 (1.40 mm) 0.051 (1.30 mm) Dia. 247-001 -109 0.013 (0.33 mm) 0.011 (0.28 mm) 0.35 Max. Typ. 0.43 ± 0.05 0.0085 (0.216 mm) 0.0065 (0.165 mm) Backside Contact (Andode) Gold Metallization 0.60 Typ. 2 1 0.35 Max. Typ. -108 Cathode Pin 1 Indicator 0.35 Max. Typ. 0.45 ± 0.05 2 Plcs. 0.43 ± 0.05 Bottom View Cathode Indicator 1 0.60 Typ. 1.83 ± 0.10 2 1.00 (Max.) Gold-Plated Kovar Lid 0.35 Max. Typ. 1.43 ± 0.10 0.45 ± 0.05 2 Plcs. XX Bottom View 1 1.83 ± 0.10 1.43 ± 0.10 0.15 Typ. 2 1.00 (Max.) Top View Gold-Plated Kovar Lid XX 0.15 Typ. Cathode Indicator All dimensions in mm Top View Side View 586-011 All dimensions in mm Side View 585-006 -207 0.064 (1.63 mm) 0.060 (1.52 mm) Dia. 2 Plcs. 0.086 (2.18 mm) Max. Dia. Schematic P-type Schematic N-type Metal Ceramic 0.200 (5.08 mm) Nom. 0.076 (2.10 mm) ±0.006 (1.78 mm) Metal 0.062 (1.63 mm) ±0.002 (1.52 mm) 2 Plcs 207-001 Application Notes For additional information, please refer to the following Application Notes. Diode Chips, Beam-Lead Diodes, Capacitors: Bonding Methods and Packaging ESD Compliance Testing and Recommended Protection Circuits for GaAs Devices Handling Precautions for Schottky Barrier Mixer and Detector Diodes Mixer and Detector Diodes Quality/Reliability Green Initiative™ Through our Green Initiative,™ we are committed to manufacturing products that comply with global government directives and industry requirements. Skyworks is continuously innovating RF, analog and mixed-signal ICs. For the latest product introductions and information about Skyworks, visit our Web site at www.skyworksinc.com For additional information on our broad overall product portfolio, please contact your local sales office or email us at [email protected]. Skyworks Solutions, Inc. 20 Sylvan Road, Woburn, MA 01801 USA: (781) 376-3000 • Asia: 886 2 2735 0399 x 990 Europe: 33 (0)1 41443660 • Fax: (781) 376-3100 Email: [email protected] • www.skyworksinc.com BRO376-09A Printed on Recycled Paper.