AO8814 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8814 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its commondrain configuration. Standard Product AO8814is Pbfree (meets ROHS & Sony 259 specifications). AO8814L is a Green Product ordering option. AO8814 and AO8814L are electrically identical. VDS (V) = 20V ID = 7.5 A (VGS = 10V) RDS(ON) < 16mΩ (VGS = 10V) RDS(ON) < 18mΩ (VGS = 4.5V) RDS(ON) < 24mΩ (VGS = 2.5V) RDS(ON) < 34mΩ (VGS = 1.8V) ESD Rating: 2500V HBM D1 D2 TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G1 G2 S2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±12 V 30 1.5 W 0.96 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 6 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V 7.5 TA=25°C Power Dissipation A Maximum 20 RθJA RθJL Typ 64 89 53 Max 83 120 70 Units °C/W °C/W °C/W AO8814 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V 1 IGSS Gate-Body leakage current VDS=0V, VGS=±10V BVGSO Gate-Source Breakdown Voltage VDS=0V, IG=±250uA ±12 VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.5 ID(ON) On state drain current VGS=4.5V, VDS=5V 30 TJ=55°C Gate resistance Qgd 18 mΩ VGS=2.5V, ID=6A 19 24 mΩ VGS=1.8V, ID=5A 26 34 mΩ VDS=5V, ID=7.5A 30 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=10V, ID=7.5A Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time V A 15 DYNAMIC PARAMETERS Ciss Input Capacitance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge 1 VGS=4.5V, ID=7A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Rg 0.71 16 VSD Reverse Transfer Capacitance V 22 Forward Transconductance Output Capacitance µA 13 gFS Crss µA 18 TJ=125°C Coss 5 10 VGS=10V, ID=7.5A IS Units V VDS=16V, VGS=0V Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 20 IDSS RDS(ON) Typ VGS=5V, VDS=10V, RL=1.3Ω, RGEN=3Ω 0.74 mΩ S 1 V 2.5 A 1390 pF 190 pF 150 pF 1.5 Ω 15.4 nC 1.4 nC 4 nC 6.2 ns 11 ns 40.5 ns 10 ns ns nC tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=7.5A, dI/dt=100A/µs 15 Qrr Body Diode Reverse Recovery Charge IF=7.5A, dI/dt=100A/µs 5.1 A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 2: June 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO8814 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 10V 20 VDS=5V 3V 4V VGS =2V 15 ID(A) ID(A) 20 10 10 125°C 5 VGS =1.5V 25°C 0 0 0 1 2 3 4 5 0.0 VDS(Volts) 1.0 50 Normalize ON-Resistance 1.6 40 VGS =1.8V 30 VGS =2.5V 20 VGS =4.5V 10 VGS =10V 0 0 5 10 15 1.5 2.0 2.5 VGS(Volts) Figure 2: Transfer Characteristics Figure 1: On-Regions Characteristics RDS(ON)(mΩ) 0.5 VGS=2.5V ID=6A VGS=4.5V 1.4 ID=7A VGS=1.8V ID=5A 1.2 VGS=10V ID=7.5A 1.0 0.8 20 0 ID(A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 60 1E+01 ID=7.5A 1E+00 125°C 1E-01 40 IS(A) RDS(ON)(mΩ) 50 125°C 30 1E-02 1E-03 20 1E-04 25°C 25°C 1E-05 10 0 2 4 6 8 VGS(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD(Volts) Figure 6: Body-Diode Characteristics 1.0 AO8814 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2000 5 VDS=10V ID=7.5A Ciss 1600 Capacitance (pF) VGS(Volts) 4 3 2 1200 800 Crss 400 1 0 0 0 5 10 15 0 20 100.0 10 15 20 40 TJ(Max)=150°C TA=25°C RDS(ON) limited 10µs 1ms 0.1s TJ(Max)=150°C TA=25°C 30 100µs Power (W) 10.0 5 VDS(Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics ID (Amps) Coss 10ms 1.0 20 10 1s 10s DC 0 0.001 0.1 0.1 1 10 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=83°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000