AOS Semiconductor Product Reliability Report AOC3860, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com 1 This AOS product reliability report summarizes the qualification result for AOC3860. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AOC3860 passes AOS quality and reliability requirements. The released product will be categorized by the process family and be routine monitored for continuously improving the product quality. I. Reliability Stress Test Summary and Results Test Item HTGB HTRB Precondition (Note A) HAST H3TRB Autoclave Total Sample Size Number of Failures Reference Standard 462 pcs 0 JESD22-A108 462 pcs 0 JESD22-A108 - 2772 pcs 0 JESD22-A113 96 hours 693 pcs 0 JESD22-A110 1000 hours 693 pcs 0 JESD22-A101 96 hours 693 pcs 0 JESD22-A102 Test Condition Time Point Temp = 150°C , Vgs=100% of Vgsmax Temp = 150°C , Vds=100% of Vdsmax 168hr 85°C / 85%RH + 3 cycle reflow@260°C (MSL 1) 130°C , 85%RH, 33.3 psia, Vds = 80% of Vdsmax 85°C , 85%RH, Vds = 80% of Vdsmax 121°C , 29.7psia, RH=100% -65°C to 150°C , air to air, 168 / 500 / 1000 hours 168 / 500 / 1000 hours Temperature 1000 cycles 693 pcs 0 JESD22-A104 Cycle Note: The reliability data presents total of available generic data up to the published date. Note A: MSL (Moisture Sensitivity Level) 1 based on J-STD-020 II. Reliability Evaluation FIT rate (per billion): 3.82 MTTF = 29919 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size. Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] = 3.82 9 MTTF = 10 / FIT = 29919 years Chi²= Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from burn-in tests H = Duration of burn-in testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C Af 259 87 32 13 5.64 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u =The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10-5eV / K 130 deg C 150 deg C 2.59 1 2