Reliability Report

AOS Semiconductor
Product Reliability Report
AOZ8001DI, rev A
Plastic Encapsulated Device
ALPHA & OMEGA Semiconductor, Inc
www.aosmd.com
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This AOS product reliability report summarizes the qualification result for AOZ8001DI.
Review of the electrical test results confirm that AOZ8001DI pass AOS quality and reliability
requirements for product release. The continuous qualification testing and reliability monitoring program
ensure that all outgoing products will continue to meet AOS quality and reliability standards.
Table of Contents:
I.
II.
III.
IV.
V.
Product Description
Package and Die information
Qualification Test Requirements
Qualification Tests Result
Reliability Evaluation
I. Product Description:
The AOZ8001DI is a transient voltage suppressor array designed to protect high speed data lines from ESD and
lightning.
-ROHS compliant
-Halogen free
.
Details please refer to the datasheet.
II. Package and Die Information:
Product ID
Process
Package Type
Lead Frame
Die attach material
Die bond wire
MSL level
AOZ8001DI
HV003A1/HV003B1
DFN 1.6x1.6
Cu, NiPbAu
8006NS
Au, 1 mil
Up to Level 1
III. Qualification Tests Requirements
•
•
4 lots of AOZ8001DI up to 168/500hrs of HTRB for New Product release.
3 lots of package qual testing (PCT, 500 cycles TC, HAST) for package release to manufacturing.
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IV. Qualification Tests Result
Test Item
Test Condition
Sample Size
Result
Pre-Conditioning
Per JESD 22-A113
168hrs @85 °C /85%RH+3 cyc
reflow@260°C
3 lots (Sum of TC,PCT
and HAST)
Pass
HTRB
Per JESD 22-A108_B
Vdd= 6v
Temp = 150°C
4 lots (77 /lot)
Pass
Temperature Cycle
'-65 °C to +150 °C,
air to air (2cyc/hr)
3 lots (77 /lot)
Pass
Pressure Pot
121°C, 29.7psi,
RH= 100%
3 lots (77 /lot)
Pass
HAST
'130 +/- 2°C, 85%RH,
33.3 psi, at VCC min
power dissipation.
3 lot (55 /lot)
Pass
V. Reliability Evaluation
FIT rate (per billion): 34
MTTF = 3311 years
The presentation of FIT rate for the individual product reliability is restricted by the actual HTRB sample size of the
selected product. Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per
billion device hours.
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9
Failure Rate = Chi x 10 / [2 (N) (H) (Af)]
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= 1.83 x 10 / [2x (2x77x168+2x77x500) x258] = 34
9
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MTTF = 10 / FIT = 2.90 x10 hrs= 3311 years
Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval
N = Total Number of units from HTRB tests
H = Duration of HTRB testing
Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C)
Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)]
Acceleration Factor ratio list:
55 deg C
70 deg C
85 deg C
100 deg C
115 deg C
Af
258
87
32
13
5.64
Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16
Tj u =The use junction temperature in degree (Kelvin), K = C+273.16
k = Boltzmann’s constant, 8.617164 X 10-5eV / K
3
130 deg C
150 deg C
2.59
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