AOS Semiconductor Product Reliability Report AOZ8001DI, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com 1 This AOS product reliability report summarizes the qualification result for AOZ8001DI. Review of the electrical test results confirm that AOZ8001DI pass AOS quality and reliability requirements for product release. The continuous qualification testing and reliability monitoring program ensure that all outgoing products will continue to meet AOS quality and reliability standards. Table of Contents: I. II. III. IV. V. Product Description Package and Die information Qualification Test Requirements Qualification Tests Result Reliability Evaluation I. Product Description: The AOZ8001DI is a transient voltage suppressor array designed to protect high speed data lines from ESD and lightning. -ROHS compliant -Halogen free . Details please refer to the datasheet. II. Package and Die Information: Product ID Process Package Type Lead Frame Die attach material Die bond wire MSL level AOZ8001DI HV003A1/HV003B1 DFN 1.6x1.6 Cu, NiPbAu 8006NS Au, 1 mil Up to Level 1 III. Qualification Tests Requirements • • 4 lots of AOZ8001DI up to 168/500hrs of HTRB for New Product release. 3 lots of package qual testing (PCT, 500 cycles TC, HAST) for package release to manufacturing. 2 IV. Qualification Tests Result Test Item Test Condition Sample Size Result Pre-Conditioning Per JESD 22-A113 168hrs @85 °C /85%RH+3 cyc reflow@260°C 3 lots (Sum of TC,PCT and HAST) Pass HTRB Per JESD 22-A108_B Vdd= 6v Temp = 150°C 4 lots (77 /lot) Pass Temperature Cycle '-65 °C to +150 °C, air to air (2cyc/hr) 3 lots (77 /lot) Pass Pressure Pot 121°C, 29.7psi, RH= 100% 3 lots (77 /lot) Pass HAST '130 +/- 2°C, 85%RH, 33.3 psi, at VCC min power dissipation. 3 lot (55 /lot) Pass V. Reliability Evaluation FIT rate (per billion): 34 MTTF = 3311 years The presentation of FIT rate for the individual product reliability is restricted by the actual HTRB sample size of the selected product. Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion device hours. 2 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] 9 = 1.83 x 10 / [2x (2x77x168+2x77x500) x258] = 34 9 7 MTTF = 10 / FIT = 2.90 x10 hrs= 3311 years Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB tests H = Duration of HTRB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C Af 258 87 32 13 5.64 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u =The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10-5eV / K 3 130 deg C 150 deg C 2.59 1