Datasheet

AON2801
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AON2801 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications.
RoHS and Halogen-Free Compliant
VDS (V) = -20V
ID = -3A
(VGS = -4.5V)
RDS(ON) < 120mΩ (VGS = -4.5V)
RDS(ON) < 160mΩ (VGS = -2.5V)
RDS(ON) < 200mΩ (VGS = -1.8V)
DFN 2x2 Package
S1
G1
D2
G2
G1
D1
Top
G2
VGS
TA=25°C
S2
TA=70°C
TA=25°C
Units
V
±8
V
ID
-2.3
IDM
-15
Junction and Storage Temperature Range
W
0.95
TJ, TSTG
-55 to 150
Symbol
t ≤ 10s
Steady-State
t ≤ 10s
Steady-State
A
1.5
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient B
Maximum Junction-to-Ambient B
Maximum
-20
-3
Pulsed Drain Current C
Rev.3.0: October 2015
S1
Symbol
VDS
Gate-Source Voltage
Power Dissipation A
S2
Bottom
Parameter
Drain-Source Voltage
Continuous Drain
CurrentA
D2
D1
RθJA
RθJA
www.aosmd.com
Typ
35
65
120
175
°C
Max
45
85
155
235
Units
°C/W
°C/W
°C/W
°C/W
Page 1 of 5
AON2801
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
-20
-1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±8V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-0.3
ID(ON)
On state drain current
VGS=-4.5V, VDS=-5V
-15
TJ=55°C
nA
V
100
120
135
170
VGS=-2.5V, ID=-2.6A
128
160
mΩ
VGS=-1.8V, ID=-1.5A
160
200
mΩ
TJ=125°C
VDS=-5V, ID=-3A
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Gate Source Charge
A
mΩ
6
S
-0.76
V
540
-1
A
700
pF
VGS=0V, VDS=-10V, f=1MHz
90
pF
63
pF
VGS=0V, VDS=0V, f=1MHz
9.5
Ω
VGS=-4.5V, VDS=-10V, ID=-3A
1.2
nC
SWITCHING PARAMETERS
Total Gate Charge
Qg
Qgs
µA
-1
Forward Transconductance
Output Capacitance
-5
±100
gFS
Coss
Units
-0.55
VGS=-4.5V, ID=-3A
Static Drain-Source On-Resistance
Max
V
VDS=-20V, VGS=0V
IDSS
RDS(ON)
Typ
5
6.5
nC
Qgd
Gate Drain Charge
1
nC
tD(on)
Turn-On DelayTime
5
ns
tr
Turn-On Rise Time
40
ns
tD(off)
Turn-Off DelayTime
28.5
ns
tf
trr
Turn-Off Fall Time
Qrr
VGS=-4.5V, VDS=-10V, RL=1.5Ω,
RGEN=3Ω
46
IF=-3A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-3A, dI/dt=100A/µs
21
ns
28
9.1
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
-15 value in any given application depends
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The
on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it to.
B. The value of R θJA is measured with the device mounted on a minimum pad board with 2oz. Copper, in a still air environment with T A =25°C.
The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it to.
C. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
*This device is guaranteed green after data code 7111 (Oct 15 2007).
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Rev.3.0: October 2015
www.aosmd.com
Page 2 of 5
AON2801
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
15
-3.0V
-4.5V
VDS=-5V
12
12
-2.5V
-ID(A)
-ID (A)
9
-2.0V
6
25°C
9
125°C
6
VGS=-1.5V
3
3
0
0
1
2
3
0
4
0
-VDS (Volts)
Figure 1: On-Region Characteristics
2
3
4
-VGS(Volts)
Figure 2: Transfer Characteristics
1.5
Normalized On
On-Resistance
280
240
RDS(ON) (mΩ)
1
VGS=-1.8V
200
VGS=-2.5V
160
120
VGS=-4.5V
80
0
2
4
6
8
VGS=-1.8V
ID=-1.5A
VGS=-2.5V
ID=-2.6A
1.3
VGS=-4.5V
ID=-3A
1.1
0.9
0.7
10
-50
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
-15
320
-25
0
25
50
75
100
125
150
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
1E+01
ID=-3A
280
1E+00
125°C
1E-01
-IS (A)
RDS(ON) (mΩ)
12
240
200
125°C
160
1E-02
25°C
1E-03
120
25°C
1E-04
80
0
2
4
6
8
1E-05
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Rev.3.0: October 2015
www.aosmd.com
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics
Page 3 of 5
AON2801
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
800
VDS=-10V
ID=-3A
700
3
2
Ciss
600
Capacitance (pF)
-VGS (Volts)
4
500
400
300
200
1
Crss
Coss
100
0
0
1
2
3
4
5
0
6
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
5
10
15
-VDS (Volts)
Figure 8: Capacitance Characteristics
10000
100.00
TJ(Max)=150°C
TA=25°C
TJ(Max)=150°C
TA=25°C
10µs
10.00
1000
100µs
1.00
Power (W)
-ID (Amps)
20
1ms
RDS(ON)
limited
0.10
10ms
0.1s
10s
DC
100
10
0.01
0.1
1
10
100
-VDS (Volts)
1
0.000001
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
-15
0.0001
0.01
1
100
10000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
ZθJA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=85°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
12
0.1
PD
0.01
Ton
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.3.0: October 2015
www.aosmd.com
Page 4 of 5
AON2801
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
Qgd
+
+
DUT
Qgs
Vds
VDC
Vgs
Ig
Charge
Resistive Switching Test Circuit & W aveform s
RL
Vds
t off
t on
td(on)
Vgs
-
D UT
Vgs
t d(off)
tr
90%
Vdd
VDC
tf
+
Rg
Vgs
10%
Vds
Diode Recovery Test Circuit & W aveform s
Q rr = - Idt
Vds +
D UT
Vds -
Isd
Vgs
Ig
Rev.3.0: October 2015
Vgs
L
-Isd
+ Vdd
t rr
dI/dt
-I R M
Vdd
VD C
-
-I F
-Vds
www.aosmd.com
Page 5 of 5