AOSMD AO6405

AO6405
30V P-Channel MOSFET
General Description
Product Summary
The AO6405 uses advanced trench technology to provide
excellent RDS(ON) with low gate charge. This device is
suitable for use as a load switch or in PWM applications.
ID (at VGS=10V)
VDS
-30V
-5A
RDS(ON) (at VGS=10V)
< 52mΩ
RDS(ON) (at VGS = 4.5V)
< 87mΩ
TSOP6
Top View
D
Bottom View
Top View
D
1
6
D
D
2
5
D
G
3
4
S
G
S
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TA=25°C
Pulsed Drain Current C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev 5: Nov 2011
Steady-State
Steady-State
A
2
W
1.3
TJ, TSTG
Symbol
t ≤ 10s
V
-20
PD
TA=70°C
±20
-4.2
IDM
TA=25°C
Power Dissipation B
Units
V
-5
ID
TA=70°C
Maximum
-30
RθJA
RθJL
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-55 to 150
Typ
47.5
74
37
°C
Max
62.5
110
50
Units
°C/W
°C/W
°C/W
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AO6405
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-30
-1
TJ=55°C
-5
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.4
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-20
nA
-2.4
V
34
52
52
70
VGS=-4.5V, ID=-4A
54
87
10
TJ=125°C
gFS
Forward Transconductance
VDS=-5V, ID=-5A
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
Crss
Reverse Transfer Capacitance
Gate resistance
A
-0.7
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Rg
µA
±100
Static Drain-Source On-Resistance
Output Capacitance
Units
-1.9
VGS=-10V, ID=-5A
Coss
Max
V
VDS=-30V, VGS=0V
IGSS
RDS(ON)
Typ
VGS=0V, VDS=-15V, f=1MHz
S
V
-2.5
A
520
pF
100
pF
pF
Ω
7.5
11.5
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
9.2
11
nC
Qg(4.5V) Total Gate Charge
4.6
6
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=-10V, VDS=-15V, ID=-5A
3.5
mΩ
-1
65
VGS=0V, VDS=0V, f=1MHz
mΩ
1.6
nC
2.2
nC
7.5
ns
VGS=-10V, VDS=-15V, RL=3Ω,
RGEN=3Ω
5.5
ns
19
ns
tf
Turn-Off Fall Time
7
ns
trr
Body Diode Reverse Recovery Time
IF=-5A, dI/dt=100A/µs
11
Qrr
Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs
5.3
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 5: Nov 2011
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Page 2 of 5
AO6405
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
30
VDS=-5V
-6V
25
25
-10V
-4.5V
20
-ID(A)
-ID (A)
20
15
15
-4V
10
10
25°C
125°C
5
5
VGS=-3.5V
0
0
0
1
2
3
4
0.5
5
80
2.5
3.5
4.5
5.5
1.8
Normalized On-Resistance
70
VGS=-4.5V
60
RDS(ON) (mΩ
Ω)
1.5
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
50
40
30
VGS=-10V
20
VGS=-10V
ID=-5A
1.6
1.4
17
5
2
10
=-4.5V
1.2
VGS
ID=-4A
1
0.8
10
0
2
0
4
6
8
10
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
120
1.0E+02
ID=-5A
1.0E+01
100
40
80
-IS (A)
RDS(ON) (mΩ
Ω)
1.0E+00
125°C
60
1.0E-01
125°C
1.0E-02
25°C
1.0E-03
40
25°C
1.0E-04
1.0E-05
20
2
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 5: Nov 2011
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AO6405
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
800
VDS=-15V
ID=-5A
8
Ciss
Capacitance (pF)
-VGS (Volts)
600
6
4
400
Coss
200
2
0
Crss
0
0
2
4
6
8
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
0
5
10
15
20
25
-VDS (Volts)
Figure 8: Capacitance Characteristics
30
40
100.0
TA=25°C
10µs
RDS(ON)
limited
100µs
1ms
1.0
10ms
10ms
0.1
30
Power (W)
ID (Amps)
10.0
100ms
10s
TJ(Max)=150°C
TA=25°C
20
10
DC
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
1
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.01
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=110°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 5: Nov 2011
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Page 4 of 5
AO6405
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev 5: Nov 2011
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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Page 5 of 5