AON7400 30V N-Channel MOSFET General Description Product Summary The AON7400 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC - DC converters and Load Switch applications. ID (at VGS=10V) 30V 26A RDS(ON) (at VGS=10V) < 12.5mΩ RDS(ON) (at VGS = 4.5V) < 14.5mΩ Top View VDS DFN 3x3 EP Bottom View D Top View 1 8 2 7 3 6 4 5 G S Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C Pulsed Drain Current C Continuous Drain Current TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev 3: Mar. 2011 35 Steady-State Steady-State W 14 3.1 RθJA RθJC www.aosmd.com W 2 TJ, TSTG Symbol t ≤ 10s A 9 PDSM Junction and Storage Temperature Range A 10 PD TA=25°C V 80 IDSM TA=70°C ±12 20 IDM TA=25°C Units V 26 ID TC=100°C Maximum 30 -55 to 150 Typ 30 60 3.1 °C Max 40 75 3.7 Units °C/W °C/W °C/W Page 1 of 5 AON7400 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V 1 IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 80 TJ=55°C VDS=0V, VGS= ±12V Static Drain-Source On-Resistance gFS Forward Transconductance VDS=5V, ID=10A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current TJ=125°C Output Capacitance Rg Gate resistance nA 1.55 2.5 V 10.5 12.5 A 12.2 0.74 1210 VGS=0V, VDS=15V, f=1MHz mΩ 14.5 mΩ 1 V 35 A 1452 pF 40 DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance 100 14.7 VGS=4.5V, ID=10A Crss µA 5 VGS=10V, ID=10A Units V VDS=30V, VGS=0V Zero Gate Voltage Drain Current RDS(ON) Max 30 IDSS Coss Typ S 330 396 pF 85 119 pF 1.2 1.6 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 22 28 nC Qg(4.5V) Total Gate Charge 10 13 nC Qgs Gate Source Charge VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=10A 0.8 3.7 nC Qgd Gate Drain Charge 2.7 nC tD(on) Turn-On DelayTime 10 ns tr Turn-On Rise Time 6.3 ns tD(off) Turn-Off DelayTime 21 ns tf Turn-Off Fall Time 2.8 ns VGS=10V, VDS=15V, RL=1.1Ω, RGEN=3Ω trr Body Diode Reverse Recovery Time IF=10A, dI/dt=500A/µs 36 Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs 47 45 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 3: Mar. 2011 www.aosmd.com Page 2 of 5 AON7400 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 30 10V VDS=5V 4.5V 25 80 6V 20 ID(A) ID (A) 60 40 3V 15 10 20 125°C 5 25°C VGS=2.5V 0 0 0 1 2 3 4 0 5 1 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 20 Normalized On-Resistance 2 VGS=4.5V 15 RDS(ON) (mΩ ) 2 10 VGS=10V 5 1.8 VGS=10V ID=10A 1.6 17 5 2 VGS=4.5V 10 1.4 1.2 ID=10A 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 20 1.0E+02 ID=10A 1.0E+01 IS (A) RDS(ON) (mΩ ) 40 1.0E+00 125°C 15 125°C 1.0E-01 1.0E-02 10 25°C 25°C 1.0E-03 1.0E-04 1.0E-05 5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 3: Mar. 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AON7400 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2000 10 VDS=15V ID=10A 1600 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 1200 800 Coss 2 400 0 0 0 5 10 15 20 Qg (nC) Figure 7: Gate-Charge Characteristics 25 Crss 0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 10000 1000.0 TA=25°C 10.0 1000 10µs 100µ RDS(ON) limited Power (W) ID (Amps) 100.0 1m 1.0 10ms TJ(Max)=150°C TA=25°C 0.1 100 10 10s DC 0.0 1 0.01 0.1 1 VDS (Volts) 10 100 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 3: Mar. 2011 www.aosmd.com Page 4 of 5 AON7400 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s RL V ds Vds DUT Vgs 90 % + Vdd VDC - Rg 1 0% Vgs V gs t d (o n ) tr t d (o ff) to n tf t o ff D iode R ecovery T est C ircuit & W aveform s Q rr = - V ds + Idt DUT V gs V ds - Isd V gs Ig Rev 3: Mar. 2011 L Isd + VD C - IF t rr dI/dt I RM V dd V dd V ds www.aosmd.com Page 5 of 5