Datasheet

AO4480
40V N-Channel MOSFET
General Description
Product Summary
The AO4480 uses advanced trench technology to
provide excellent RDS(ON), low gate charge. It is ESD
Protected. This device is suitable for use as a low side
switch in SMPS and general purpose applications.
VDS (V) = 40V
ID = 14A (VGS = 10V)
RDS(ON) < 11.5mΩ (VGS = 10V)
RDS(ON) < 15.5mΩ (VGS = 4.5V)
ESD Rating: 4KV HBM
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
D
Bottom View
D
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current AF
VGS
TA=25°C
Units
V
±20
V
14
TA=70°C
Pulsed Drain Current B
TA=25°C
Power Dissipation
Maximum
40
IDSM
11
IDM
70
3.1
PD
TA=70°C
A
W
2.0
Avalanche Current B
IAR
30
A
Repetitive avalanche energy 0.3mH B
EAR
135
mJ
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Alpha & Omega Semiconductor, Ltd.
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJA
RθJL
Typ
30
59
16
Max
40
75
24
Units
°C/W
°C/W
°C/W
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AO4480
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250uA, VGS=0V
5
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
70
VGS=10V, ID=14A
TJ=125°C
VGS=4.5V, ID=5A
±100
µA
3
V
9
11.5
A
13
12
Forward Transconductance
VDS=5V, ID=14A
50
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
1600
VGS=0V, VDS=20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
uA
2
gFS
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Units
V
1
TJ=55°C
Static Drain-Source On-Resistance
Max
40
VDS=32V, VGS=0V
IGSS
RDS(ON)
Typ
mΩ
15.5
mΩ
1
V
4
A
S
1920
pF
320
pF
100
pF
3.4
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
22
nC
Qg(4.5V) Total Gate Charge
10.5
nC
4.2
nC
4.8
nC
3.5
ns
VGS=10V, VDS=20V, ID=14A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Body Diode Reverse Recovery Time
IF=14A, dI/dt=100A/µs
Qrr
Body Diode Reverse Recovery Charge IF=14A, dI/dt=100A/µs
33
VGS=10V, VDS=20V, RL=1.5Ω,
RGEN=3Ω
6
ns
13.2
ns
3.5
ns
31
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
Rev2: Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AO4480
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
10V
-40°C
VDS=5V
5V
80
25°C
80
4V
125°C
60
ID(A)
ID (A)
60
40
40
VGS=3.5V
20
20
VGS=3V
-40°C
125°C
25°C
0
0
0
1
2
3
4
2
5
2.5
14
3.5
4
4.5
Normalized On-Resistance
12
10
VGS=10V
8
5
5.5
500
150
60
1.6
VGS=4.5V
RDS(ON) (mΩ )
3
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Figure 1: On-Region Characteristics
VGS=10V
ID=14A
1.4
1.2
VGS=4.5V
ID=5A
1
0.8
6
0
5
10
15
20
25
0.6
30
-50
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
0
25
50
75
100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
30
1.0E+01
1.0E+00
25
ID=14A
125°C
1.0E-01
20
IS (A)
RDS(ON) (mΩ )
-25
125°C
15
1.0E-02
1.0E-03
-40°C
1.0E-04
10
25°C
25°C
1.0E-05
5
0.0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AO4480
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2400
10
VDS=20V
ID=14A
2000
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
1600
1200
800
Coss
Crss
2
400
0
0
4
8
12
16
20
0
24
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
15
20
25
30
35
VDS (Volts)
Figure 8: Capacitance Characteristics
10ms
80
1ms
1.0
10s
0.0
0.01
1s
TJ(Max)=150°C
Tc=25°C
60
40
DC
TJ(Max)=150°C
TA=25°C
0.1
Power (W)
100ms
RDS(ON)
limited
40
500
150
60
100
10.0
ID (Amps)
10
10µs
100µs
20
1
10
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.1
10
Zθ JA Normalized Transient
Thermal Resistance
5
0
0.001
100
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
1
0.1
PD
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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