AO4446 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4446 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use in PWM applications. Standard Product AO4446 is Pb-free (meets ROHS & Sony 259 specifications). AO4446L is a Green Product ordering option. AO4446 and AO4446L are electrically identical. VDS (V) = 30V ID = 15A (VGS = 10V) RDS(ON) < 8.5mΩ (VGS = 10V) RDS(ON) < 14.5mΩ (VGS = 4.5V) S S S G D D D D D SOIC-8 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current TA=70°C B Avalanche Current B B TA=25°C Power Dissipation ±20 V Junction and Storage Temperature Range 12 IAR 20 A EAR 50 mJ 40 3 W 2.1 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. A ID IDM PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Case Units V 15 TA=25°C Repetitive avalanche energy L=0.1mH Maximum 30 RθJA RθJC Typ 33 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W AO4446 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 1 TJ=55°C 5 Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 40 VGS=10V, I D=15A TJ=125°C Static Drain-Source On-Resistance VGS=4.5V, I D=11A gFS Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current VDS=5V, ID=15A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr Units V VDS=24V, VGS=0V VGS(th) IS Max 30 IGSS RDS(ON) Typ 100 nA 2.2 3 V 6.9 8.5 11 13.5 11.8 14.5 A 27 VGS=0V, VDS=0V, f=1MHz VGS=4.5V, V DS=15V, I D=15A mΩ mΩ S 0.71 1520 VGS=0V, VDS=15V, f=100kHz µA 1 V 4 A 1825 pF 306 pF 214 pF 0.47 0.7 Ω 33.7 40 nC 17 20 nC 6.2 nC Gate Drain Charge 10 nC Turn-On DelayTime 7.2 ns VGS=10V, VDS=15V, RL=1.0Ω, RGEN=3Ω 8.2 ns 22 ns 6.7 ns Body Diode Reverse Recovery Time IF=15A, dI/dt=100A/µs 24 Body Diode Reverse Recovery Charge IF=15A, dI/dt=100A/µs 19 30 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 1: May 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4446 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 60 4.5V 5.0V 10V 50 4.0V 20 VDS=5V 40 ID(A) ID (A) 125°C 10 30 20 VGS=3.5V 25°C 10 0 0 1 2 3 4 0 5 1.5 2 VDS (Volts) Fig 1: On-Region Characteristics 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics 2 Normalized On-Resistance 16 VGS=4.5V 14 RDS(ON) (mΩ) 2.5 12 10 8 VGS=10V 1.8 VGS=10V ID=15A 1.6 1.4 1.2 VGS=4.5V ID=11A 1 6 0 5 10 15 20 25 30 0.8 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 20 1.0E+02 ID=15A 1.0E+01 125°C 1.0E+00 125°C IS (A) RDS(ON) (mΩ) 16 12 1.0E-01 25°C 1.0E-02 1.0E-03 8 1.0E-04 25°C 4 1.0E-05 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO4446 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2500 10 VDS=15V ID=15A 2000 Capacitance (pF) VGS (Volts) 8 6 4 1500 1000 Coss 2 500 0 0 0 5 10 15 20 25 30 Ciss 35 Crss 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 80 1ms 10ms 10 100µs 1s 10s TJ(Max)=150°C TA=25°C 30 40 20 DC 0.1 0.1 25 60 0.1s 1 20 TJ(Max)=150°C TA=25°C 10µs Power (W) ID (Amps) RDS(ON) limited 1 10 0 0.001 100 VDS (Volts) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJA Normalized Transient Thermal Resistance 15 VDS (Volts) Figure 8: Capacitance Characteristics 100 10 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 100 1000