Datasheet

AO7800
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO7800 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.8V, in the small SOT363 footprint. It
can be used for a wide variety of applications, including
load switching, low current inverters and low current DCDC converters.It is ESD protected.
VDS (V) = 20V
ID = 0.9 A (VGS = 4.5V)
RDS(ON) < 300mΩ (VGS = 4.5V)
RDS(ON) < 350mΩ (VGS = 2.5V)
RDS(ON) < 450mΩ (VGS = 1.8V)
SC70-6L
(SOT-363)
Pin1
Bottom View
Top View
D2
D1
S1
1
6
D1
G1
2
5
G2
D2
3
4
S2
G2
G1
S2
S1
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current A
TA=70°C
Pulsed Drain Current
B
TA=25°C
Power Dissipation
A
TA=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Rev 4: April 2015
Maximum
20
Units
V
±8
V
0.9
ID
0.7
IDM
5
A
0.9
PD
W
0.6
TJ, TSTG
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJA
RθJL
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Typ
120
156
130
°C
Max
145
190
150
Units
°C/W
°C/W
°C/W
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Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
1
TJ=55°C
5
25
µA
0.9
V
181
300
253
350
VGS=2.5V, ID=0.75A
237
350
mΩ
VGS=1.8V, ID=0.7A
317
450
mΩ
1
V
0.4
A
VDS=0V, VGS=±8V
VDS=VGS ID=250µA
0.5
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
5
VGS=4.5V, ID=0.9A
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=0.8A
2.6
VSD
Diode Forward Voltage
IS=0.5A,VGS=0V
0.69
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
101
VGS=0V, VDS=10V, f=1MHz
Gate Source Charge
VGS=4.5V, VDS=10V, ID=0.8A
mΩ
S
120
17
pF
pF
14
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
µA
0.75
Gate-Body leakage current
Gate Threshold Voltage
Coss
Units
V
VDS=16V, VGS=0V
VGS(th)
Static Drain-Source On-Resistance
Max
20
IGSS
RDS(ON)
Typ
pF
3
4
1.57
1.9
Ω
nC
0.13
nC
Qgd
Gate Drain Charge
0.36
nC
tD(on)
Turn-On DelayTime
3.2
ns
tr
Turn-On Rise Time
4
ns
tD(off)
Turn-Off DelayTime
15.5
ns
tf
trr
Turn-Off Fall Time
IF=0.8A, dI/dt=100A/µs
6.7
Qrr
Body Diode Reverse Recovery Charge IF=0.8A, dI/dt=100A/µs
1.6
Body Diode Reverse Recovery Time
VGS=5V, VDS=10V, RL=12.5Ω,
RGEN=6Ω
2.4
ns
8.1
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 4: April 2015
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4
10
10V
8V
VDS=5V
5V
8
3
4V
125°C
3.5V
ID(A)
ID (A)
6
25°C
3V
4
2
2.5V
1
VGS=2V
2
0
0
0
1
2
3
4
5
0
0.5
VDS (Volts)
Fig 1: On-Region Characteristics
1.5
2
2.5
3
VGS(Volts)
Figure 2: Transfer Characteristics
480
1.8
VGS=1.8V
440
Normalized On-Resistance
VGS=1.8V
400
RDS(ON) (mΩ)
1
360
320
VGS=2.5V
280
240
VGS=4.5V
200
160
1.6
VGS=2.5V
ID=0.7A
ID=0.75A
1.4
VGS=4.5V
1.2
ID=0.9A
1
0.8
0
1
2
3
4
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
500
1E+01
460
1E+00
125°
ID=0.9A
380
1E-01
340
300
IS (A)
RDS(ON) (mΩ)
420
125°
1E-02
25°
260
1E-03
220
25°
180
1E-04
140
1
2
3
4
5
6
7
8
1E-05
0.0
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Rev 4: April 2015
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0.4
0.8
1.2
1.6
2.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
200
5
VDS=10V
ID=0.9A
Capacitance (pF)
VGS (Volts)
4
3
2
150
Ciss
100
Coss
Crss
50
1
0
0
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
5
10
15
20
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
16
TJ(Max)=150°
C
12
10µs
1.0
100µs
1ms
10ms
0.1s
1s
10s
RDS(ON)
limited
0.1
TJ(Max)=150°C
TA=25°C
0.0
0.01
0.1
DC
1
10
Power (W)
ID (Amps)
10.0
8
4
100
0
0.0001 0.001
VDS (Volts)
ZθJA Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=190°C/W
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
0.01
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Rev 4: April 2015
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Page 4 of 5
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & W aveform s
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev 4: April 2015
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 5 of 5